Follow
D Pachinger
D Pachinger
BEV/E+E designated Institute
Verified email at epluse.at
Title
Cited by
Cited by
Year
Colloidal HgTe nanocrystals with widely tunable narrow band gap energies: from telecommunications to molecular vibrations
MV Kovalenko, E Kaufmann, D Pachinger, J Roither, M Huber, J Stangl, ...
Journal of the American Chemical Society 128 (11), 3516-3517, 2006
2352006
Lateral quantum dots in Si∕ SiGe realized by a Schottky split-gate technique
T Berer, D Pachinger, G Pillwein, M Mühlberger, H Lichtenberger, ...
Applied Physics Letters 88 (16), 2006
592006
Stranski-Krastanow growth of tensile strained Si islands on Ge (001)
D Pachinger, H Groiss, H Lichtenberger, J Stangl, G Hesser, F Schäffler
Applied Physics Letters 91 (23), 2007
332007
Ordering of Ge islands on hill-patterned Si (001) templates
G Chen, G Vastola, H Lichtenberger, D Pachinger, G Bauer, W Jantsch, ...
Applied physics letters 92 (11), 2008
262008
Surfactant-mediated Si quantum dot formation on Ge (001)
D Pachinger, H Groiss, M Teuchtmann, G Hesser, F Schäffler
Applied Physics Letters 98 (22), 2011
242011
MBE growth conditions for Si island formation on Ge (001) substrates
D Pachinger, H Lichtenberger, G Chen, J Stangl, G Hesser, F Schäffler
Thin Solid Films 517 (1), 62-64, 2008
122008
Single-electron transistor in strained Si/SiGe heterostructures
T Berer, D Pachinger, G Pillwein, M Mühlberger, H Lichtenberger, ...
Physica E: Low-dimensional Systems and Nanostructures 34 (1-2), 456-459, 2006
112006
Design and fabrication of a SiGe double quantum well structure for g-factor tuning
H Malissa, D Gruber, D Pachinger, F Schäffler, W Jantsch, Z Wilamowski
Superlattices and Microstructures 39 (5), 414-420, 2006
82006
Fabrication of SiGe nanostructures for infrared devices
D Pachinger
na, 2009
22009
g-Factor tuning of 2D electrons in double-gated Si/SiGe quantum wells
D Gruber, D Pachinger, H Malissa, M Mühlberger, H Lichtenberger, ...
Physica E: Low-dimensional Systems and Nanostructures 32 (1-2), 254-257, 2006
22006
High mobility Si/SiGe heterostructures for spintronic applications
D Pachinger
na, 2003
22003
High Mobility Si/SiGe Heterostructures for Spintronics Applications
D Gruber, H Malissa, G Chen, D Pachinger, H Lichtenberger, T Fromherz, ...
Proceedings of the GMe Forum, 109, 2005
12005
Lateral quantum dots in Si
T Berer, D Pachinger, G Pillwein, M Mühlberger, H Lichtenberger, ...
Semiconductor science and technology 22 (1), 2007
2007
Stranski-Krastanov Growth of Tensely Strained Si on Ge (001) Substrates
D Pachinger, H Lichtenberger, F Schäffler
GMe Workshop 2006, 107, 2006
2006
Self-Organized Si Dots On Ge Substrates
D Pachinger, H Schaeffler
arXiv preprint cond-mat/0608660, 2006
2006
Conductivity fluctuations in Coulomb barrier regime of AlGaAs quantum dots
G Pillwein, G Brunthaler, G Strasser
Lateral Quantum Dot in Si/SiGe realized by Schottky Split-Gate
T Berer, D Pachinger, G Pillwein, M Muihlberger, H Lichtenberger, ...
Device Processing for Spintronics Applications
D Gruber, H Malissa, D Pachinger, M Mühlberger, F Schäffler, W Jantsch
The Society for Micro-and Nanoelectronics, 205, 0
The system can't perform the operation now. Try again later.
Articles 1–18