Won Jong Yoo
Won Jong Yoo
Verified email at skku.edu - Homepage
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Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures
GH Lee, YJ Yu, X Cui, N Petrone, CH Lee, MS Choi, DY Lee, C Lee, ...
ACS nano 7 (9), 7931-7936, 2013
High‐performance perovskite–graphene hybrid photodetector
Y Lee, J Kwon, E Hwang, CH Ra, WJ Yoo, JH Ahn, JH Park, JH Cho
Advanced materials 27 (1), 41-46, 2015
Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices
MS Choi, GH Lee, YJ Yu, DY Lee, SH Lee, P Kim, J Hone, WJ Yoo
Nature communications 4 (1), 1-7, 2013
Highly stretchable piezoelectric‐pyroelectric hybrid nanogenerator
JH Lee, KY Lee, MK Gupta, TY Kim, DY Lee, J Oh, C Ryu, WJ Yoo, ...
Advanced Materials 26 (5), 765-769, 2014
Lateral MoS2 p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics
MS Choi, D Qu, D Lee, X Liu, K Watanabe, T Taniguchi, WJ Yoo
ACS nano 8 (9), 9332-9340, 2014
Fermi level pinning at electrical metal contacts of monolayer molybdenum dichalcogenides
C Kim, I Moon, D Lee, MS Choi, F Ahmed, S Nam, Y Cho, HJ Shin, S Park, ...
ACS nano 11 (2), 1588-1596, 2017
Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide
HM Li, D Lee, D Qu, X Liu, J Ryu, A Seabaugh, WJ Yoo
Nature communications 6 (1), 1-9, 2015
Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO high-/spl kappa/tunneling and control oxides: Device fabrication and electrical performance
JH Chen, YQ Wang, WJ Yoo, YC Yeo, G Samudra, DSH Chan, AY Du, ...
IEEE transactions on electron devices 51 (11), 1840-1848, 2004
P‐Type Polar Transition of Chemically Doped Multilayer MoS2 Transistor
X Liu, D Qu, J Ryu, F Ahmed, Z Yang, D Lee, WJ Yoo
Advanced Materials 28 (12), 2345-2351, 2016
Schottky-barrier S/D MOSFETs with high-k gate dielectrics and metal-gate electrode
S Zhu, HY Yu, SJ Whang, JH Chen, C Shen, C Zhu, SJ Lee, MF Li, ...
IEEE Electron Device Letters 25 (5), 268-270, 2004
Crystalline zirconia oxide on silicon as alternative gate dielectrics
SJ Wang, CK Ong, SY Xu, P Chen, WC Tjiu, JW Chai, ACH Huan, WJ Yoo, ...
Applied Physics Letters 78 (11), 1604-1606, 2001
Carrier‐Type Modulation and Mobility Improvement of Thin MoTe2
D Qu, X Liu, M Huang, C Lee, F Ahmed, H Kim, RS Ruoff, J Hone, WJ Yoo
Advanced Materials 29 (39), 1606433, 2017
Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p–n Junction
X Liu, D Qu, HM Li, I Moon, F Ahmed, C Kim, M Lee, Y Choi, JH Cho, ...
ACS nano 11 (9), 9143-9150, 2017
Colossal grain growth yields single-crystal metal foils by contact-free annealing
S Jin, M Huang, Y Kwon, L Zhang, BW Li, S Oh, J Dong, D Luo, M Biswal, ...
Science 362 (6418), 1021-1025, 2018
Metal-semiconductor barrier modulation for high photoresponse in transition metal dichalcogenide field effect transistors
HM Li, DY Lee, MS Choi, D Qu, X Liu, CH Ra, WJ Yoo
Scientific reports 4 (1), 1-7, 2014
Highly oriented monolayer graphene grown on a Cu/Ni (111) alloy foil
M Huang, M Biswal, HJ Park, S Jin, D Qu, S Hong, Z Zhu, L Qiu, D Luo, ...
ACS nano 12 (6), 6117-6127, 2018
Si-compatible cleaning process for graphene using low-density inductively coupled plasma
YD Lim, DY Lee, TZ Shen, CH Ra, JY Choi, WJ Yoo
ACS nano 6 (5), 4410-4417, 2012
Strained n-channel FinFETs with 25 nm gate length and silicon-carbon source/drain regions for performance enhancement
TY Liow, KM Tan, R Lee, A Du, CH Tung, G Samudra, WJ Yoo, ...
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 56-57, 2006
Self-assembly of nanocrystals on and -assisted confinement for nonvolatile memory application
Z Tan, SK Samanta, WJ Yoo, S Lee
Applied Physics Letters 86 (1), 013107, 2005
High-performance photocurrent generation from two-dimensional WS2 field-effect transistors
S Hwan Lee, D Lee, W Sik Hwang, E Hwang, D Jena, W Jong Yoo
Applied Physics Letters 104 (19), 193113, 2014
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