A CMOS silicon spin qubit R Maurand, X Jehl, D Kotekar-Patil, A Corna, H Bohuslavskyi, R Laviéville, ...
Nature communications 7 (1), 13575, 2016
595 2016 Electrical Spin Driving by A Crippa, R Maurand, L Bourdet, D Kotekar-Patil, A Amisse, X Jehl, ...
Physical review letters 120 (13), 137702, 2018
134 2018 Cryogenic subthreshold swing saturation in FD-SOI MOSFETs described with band broadening H Bohuslavskyi, AGM Jansen, S Barraud, V Barral, M Cassé, L Le Guevel, ...
IEEE Electron Device Letters 40 (5), 784-787, 2019
111 2019 Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot A Corna, L Bourdet, R Maurand, A Crippa, D Kotekar-Patil, ...
npj quantum information 4 (1), 6, 2018
106 2018 Characterization and modeling of 28-nm FDSOI CMOS technology down to cryogenic temperatures A Beckers, F Jazaeri, H Bohuslavskyi, L Hutin, S De Franceschi, C Enz
Solid-State Electronics 159, 106-115, 2019
95 2019 Single-electron operations in a foundry-fabricated array of quantum dots F Ansaloni, A Chatterjee, H Bohuslavskyi, B Bertrand, L Hutin, M Vinet, ...
Nature communications 11 (1), 6399, 2020
69 2020 28nm Fully-depleted SOI technology: Cryogenic control electronics for quantum computing H Bohuslavskyi, S Barraud, M Cassé, V Barrai, B Bertrand, L Hutin, ...
2017 Silicon Nanoelectronics Workshop (SNW), 143-144, 2017
52 2017 SOI technology for quantum information processing S De Franceschi, L Hutin, R Maurand, L Bourdet, H Bohuslavskyi, ...
2016 IEEE International Electron Devices Meeting (IEDM), 13.4. 1-13.4. 4, 2016
48 2016 Design-oriented modeling of 28 nm FDSOI CMOS technology down to 4.2 K for quantum computing A Beckers, F Jazaeri, H Bohuslavskyi, L Hutin, S De Franceschi, C Enz
2018 Joint International EUROSOI Workshop and International Conference on …, 2018
45 2018 Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction H Bohuslavskyi, D Kotekar-Patil, R Maurand, A Corna, S Barraud, ...
Applied Physics Letters 109 (19), 2016
41 2016 Towards scalable silicon quantum computing M Vinet, L Hutin, B Bertrand, S Barraud, JM Hartmann, YJ Kim, ...
2018 IEEE International Electron Devices Meeting (IEDM), 6.5. 1-6.5. 4, 2018
35 2018 Si CMOS platform for quantum information processing L Hutin, R Maurand, D Kotekar-Patil, A Corna, H Bohuslavskyi, X Jehl, ...
2016 IEEE Symposium on VLSI Technology, 1-2, 2016
34 2016 Level spectrum and charge relaxation in a silicon double quantum dot probed by dual-gate reflectometry A Crippa, R Maurand, D Kotekar-Patil, A Corna, H Bohuslavskyi, AO Orlov, ...
Nano letters 17 (2), 1001-1006, 2017
33 2017 Cryogenic characterization of 28-nm FD-SOI ring oscillators with energy efficiency optimization H Bohuslavskyi, S Barraud, V Barral, M Casse, L Le Guevel, L Hutin, ...
IEEE Transactions on Electron Devices 65 (9), 3682-3688, 2018
31 2018 All-electrical control of a hybrid electron spin/valley quantum bit in SOI CMOS technology L Bourdet, L Hutin, B Bertrand, A Corna, H Bohuslavskyi, A Amisse, ...
IEEE Transactions on Electron Devices 65 (11), 5151-5156, 2018
28 2018 Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays L Hutin, B Bertrand, E Chanrion, H Bohuslavskyi, F Ansaloni, TY Yang, ...
2019 IEEE International Electron Devices Meeting (IEDM), 37.7. 1-37.7. 4, 2019
25 2019 Si MOS technology for spin-based quantum computing L Hutin, B Bertrand, R Maurand, A Crippa, M Urdampilleta, YJ Kim, ...
2018 48th European Solid-State Device Research Conference (ESSDERC), 12-17, 2018
25 2018 Development of a CMOS route for electron pumps to be used in quantum metrology S Barraud, R Lavieville, L Hutin, H Bohuslavskyi, M Vinet, A Corna, ...
Technologies 4 (1), 10, 2016
14 2016 Single-electron control in a foundry-fabricated two-dimensional qubit array F Ansaloni, A Chatterjee, H Bohuslavskyi, B Bertrand, L Hutin, M Vinet, ...
arXiv preprint arXiv:2004.00894, 2020
13 2020 Autonomous estimation of high-dimensional coulomb diamonds from sparse measurements A Chatterjee, F Ansaloni, T Rasmussen, B Brovang, F Fedele, ...
Physical Review Applied 18 (6), 064040, 2022
12 2022 