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Sauvik Chowdhury
Sauvik Chowdhury
Monolithic Power Systems
Bestätigte E-Mail-Adresse bei monolithicpower.com
Titel
Zitiert von
Zitiert von
Jahr
4H-SiC n-Channel Insulated Gate Bipolar Transistors on (0001) and (000-1) Oriented Free-Standing nSubstrates
S Chowdhury, C Hitchcock, Z Stum, R Dahal, IB Bhat, TP Chow
IEEE Electron Device Letters 37 (3), 317-320, 2016
472016
Comparison of 600V Si, SiC and GaN power devices
S Chowdhury, Z Stum, ZD Li, K Ueno, TP Chow
Materials Science Forum 778, 971-974, 2014
442014
1200V, 25A bi-directional Si DMOS IGBT fabricated with fusion wafer bonding
JW Wu, S Chowdhury, C Hitchcock, JJQ Lu, TP Chow, W Kim, K Ngo
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014
272014
Operating principles, design considerations, and experimental characteristics of high-voltage 4H-SiC bidirectional IGBTs
S Chowdhury, CW Hitchcock, Z Stum, RP Dahal, IB Bhat, TP Chow
IEEE Transactions on Electron Devices 64 (3), 888-896, 2016
252016
High temperature characteristics of monolithically integrated LED and MOS‐channel HEMT in GaN using selective epi removal
Z Li, J Waldron, S Chowdhury, L Zhao, T Detchprohm, C Wetzel, ...
physica status solidi (a) 212 (5), 1110-1115, 2015
182015
Fabrication of thick free-standing lightly-doped n-type 4H-SiC wafers
RP Dahal, S Chowdhury, CW Hitchcock, TP Chow, I Bhat
Materials Science Forum 897, 379-382, 2017
172017
S4-P7: Low-temperature hydrophobic wafer bonding for 1200V, 25A bi-directional Si UMOS IGBTs
JW Wu, S Chowdhury, H Naik, J Picard, N Lee, C Hitchcock, JJQ Lu, ...
2014 Lester Eastman Conference on High Performance Devices (LEC), 1-4, 2014
172014
Reliability and ruggedness of 1200v SiC planar gate MOSFETs fabricated in a high volume CMOS foundry
S Chowdhury, L Gant, B Powell, K Rangaswamy, K Matocha
Materials Science Forum 924, 697-702, 2018
162018
Performance tradeoffs for ultra-high voltage (15 kV to 25 kV) 4H-SiC n-channel and p-channel IGBTs
S Chowdhury, TP Chow
2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016
152016
An approach to suppress the blue-shift of photoluminescence peaks in coupled multilayer InAs/GaAs quantum dots by high temperature post-growth annealing
S Adhikary, K Ghosh, S Chowdhury, N Halder, S Chakrabarti
Materials Research Bulletin 45 (10), 1466-1469, 2010
152010
Next generation 1200V, 3.5mΩ.cm2 SiC planar gate MOSFET with excellent HTRB reliability
S Chowdhury, K Matocha, B Powell, G Sheh, S Banerjee
2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018
142018
Characteristics of MOS Capacitors with NO and POCl3 Annealed Gate Oxides on (0001), (11-20) and (000-1) 4H-SiC
S Chowdhury, K Yamamoto, CW Hitchcock, TP Chow
Materials Science Forum 821, 500-503, 2015
142015
Experimental demonstration of high-voltage 4H-SiC Bi-directional IGBTs
S Chowdhury, C Hitchcock, Z Stum, RP Dahal, IB Bhat, TP Chow
IEEE Electron Device Letters 37 (8), 1033-1036, 2016
112016
SiC power MOSFETs: Designing for reliability in wide-bandgap semiconductors
K Matocha, IH Ji, X Zhang, S Chowdhury
2019 IEEE International Reliability Physics Symposium (IRPS), 1-8, 2019
102019
Comparative evaluation of commercial 1200 V SiC power MOSFETs using diagnostic IV characterization at cryogenic temperatures
S Chowdhury, CW Hitchcock, TP Chow
Materials Science Forum 897, 545-548, 2017
102017
Performance and reliability of 1200V SiC planar MOSFETs fabricated on 150mm SiC substrates
B Powell, K Matocha, S Chowdhury, K Rangaswamy, C Hundley, L Gant
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2016
102016
Characteristics of 4H-SiC PiN diodes on lightly doped free-standing substrates
S Chowdhury, C Hitchcock, R Dahal, IB Bhat, TP Chow
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015
82015
Impact of cell geometry on zero-energy turn-off of SiC power MOSFETs
X Liu, S Chowdhury, CW Hitchcock, TP Chow
Materials Science Forum 924, 756-760, 2018
62018
3300V SiC DMOSFETs fabricated in high-volume 150 mm CMOS fab
B Powell, K Matocha, S Chowdhury, C Hundley
Materials Science Forum 924, 731-734, 2018
62018
Comparison of silicon, SiC and GaN power transistor technologies with breakdown voltage rating from 1.2 kV to 15 kV
S Chowdhury, Z Guo, X Liu, TP Chow
physica status solidi (c) 13 (5‐6), 354-359, 2016
62016
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