| Flexible artificial nociceptor using a biopolymer-based forming-free memristor J Ge, S Zhang, Z Liu, Z Xie, S Pan Nanoscale 11 (14), 6591-6601, 2019 | 93 | 2019 |
| Identification of Helicity-Dependent Photocurrents from Topological Surface States in Bi2Se3 Gated by Ionic Liquid J Duan, N Tang, X He, Y Yan, S Zhang, X Qin, X Wang, X Yang, F Xu, ... Scientific reports 4 (1), 4889, 2014 | 65 | 2014 |
| High-quality AlN film grown on sputtered AlN/sapphire via growth-mode modification C He, W Zhao, H Wu, S Zhang, K Zhang, L He, N Liu, Z Chen, B Shen Crystal Growth & Design 18 (11), 6816-6823, 2018 | 51 | 2018 |
| Tunable surface electron spin splitting with electric double-layer transistors based on InN C Yin, H Yuan, X Wang, S Liu, S Zhang, N Tang, F Xu, Z Chen, ... Nano letters 13 (5), 2024-2029, 2013 | 46 | 2013 |
| Generation of Rashba spin–orbit coupling in CdSe nanowire by ionic liquid gate S Zhang, N Tang, W Jin, J Duan, X He, X Rong, C He, L Zhang, X Qin, ... Nano letters 15 (2), 1152-1157, 2015 | 39 | 2015 |
| High-quality GaN epilayers achieved by facet-controlled epitaxial lateral overgrowth on sputtered AlN/PSS templates C He, W Zhao, K Zhang, L He, H Wu, N Liu, S Zhang, X Liu, Z Chen ACS applied materials & interfaces 9 (49), 43386-43392, 2017 | 38 | 2017 |
| Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system C He, Z Qin, F Xu, L Zhang, J Wang, M Hou, S Zhang, X Wang, W Ge, ... Scientific Reports 6 (1), 25124, 2016 | 33 | 2016 |
| Observation of the photoinduced anomalous Hall effect in GaN-based heterostructures CM Yin, N Tang, S Zhang, JX Duan, FJ Xu, J Song, FH Mei, XQ Wang, ... Applied Physics Letters 98 (12), 2011 | 29 | 2011 |
| Detection of spin-orbit coupling of surface electron layer via reciprocal spin Hall effect in InN films FH Mei, N Tang, XQ Wang, JX Duan, S Zhang, YH Chen, WK Ge, B Shen Applied Physics Letters 101 (13), 2012 | 24 | 2012 |
| Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers C He, Z Qin, F Xu, M Hou, S Zhang, L Zhang, X Wang, W Ge, B Shen Scientific Reports 5 (1), 13046, 2015 | 21 | 2015 |
| Low-defect-density aluminum nitride (AlN) thin films realized by zigzag macrostep-induced dislocation redirection C He, H Wu, C Jia, K Zhang, L He, Q Wang, J Li, N Liu, S Zhang, W Zhao, ... Crystal Growth & Design 21 (6), 3394-3400, 2021 | 13 | 2021 |
| Spin transport study in a Rashba spin-orbit coupling system F Mei, S Zhang, N Tang, J Duan, F Xu, Y Chen, W Ge, B Shen Scientific Reports 4 (1), 4030, 2014 | 12 | 2014 |
| Fast growth of crack-free thick AlN film on sputtered AlN/sapphire by introducing high-density nano-voids C He, W Zhao, H Wu, N Liu, S Zhang, J Li, C Jia, K Zhang, L He, Z Chen, ... Journal of Physics D: Applied Physics 53 (40), 405303, 2020 | 10 | 2020 |
| Growth of high quality n-Al0. 5Ga0. 5N thick films by MOCVD C He, Z Qin, F Xu, L Zhang, M Wang, M Hou, W Guo, S Zhang, X Wang, ... Materials Letters 176, 298-300, 2016 | 9 | 2016 |
| Effect of stress on the Al composition evolution in AlGaN grown using metal organic vapor phase epitaxy C He, Z Qin, F Xu, L Zhang, J Wang, M Hou, S Zhang, X Wang, W Ge, ... Applied Physics Express 9 (5), 051001, 2016 | 9 | 2016 |
| Ⅲ 族氮化物半导体异质结构中载流子的量子输运和自旋性质 唐宁， 段俊熙， 张姗， 许福军， 王新强， 沈波 中国科学: 物理学, 力学, 天文学, 1176-1187, 2013 | | 2013 |
Chenguang He (何晨光)Guangdong Institute of Semiconductor Industrial Technology (Engineer); Peking University (Ph. D)Bestätigte E-Mail-Adresse bei pku.edu.cn
