Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride D Ruzmetov, K Zhang, G Stan, B Kalanyan, GR Bhimanapati, SM Eichfeld, ...
Acs Nano 10 (3), 3580-3588, 2016
248 2016 Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer D Ruzmetov, G Gopalakrishnan, C Ko, V Narayanamurti, S Ramanathan
Journal of Applied Physics 107 (11), 2010
200 2010 Hall carrier density and magnetoresistance measurements in thin-film vanadium dioxide across the metal-insulator transition D Ruzmetov, D Heiman, BB Claflin, V Narayanamurti, S Ramanathan
Physical Review B 79 (15), 153107, 2009
170 2009 Structure-functional property relationships in rf-sputtered vanadium dioxide thin films D Ruzmetov, KT Zawilski, V Narayanamurti, S Ramanathan
Journal of Applied Physics 102 (11), 2007
160 2007 Electrolyte stability determines scaling limits for solid-state 3D Li ion batteries D Ruzmetov, VP Oleshko, PM Haney, HJ Lezec, K Karki, KH Baloch, ...
Nano letters 12 (1), 505-511, 2012
153 2012 Anisotropic magnetoresistance in DV Baxter, D Ruzmetov, J Scherschligt, Y Sasaki, X Liu, JK Furdyna, ...
Physical Review B 65 (21), 212407, 2002
153 2002 On the triggering mechanism for the metal–insulator transition in thin film VO2 devices: electric field versus thermal effects G Gopalakrishnan, D Ruzmetov, S Ramanathan
Journal of materials science 44, 5345-5353, 2009
149 2009 Correlation between metal-insulator transition characteristics and electronic structure changes in vanadium oxide thin films D Ruzmetov, SD Senanayake, V Narayanamurti, S Ramanathan
Physical Review B 77 (19), 195442, 2008
143 2008 Fabrication, testing, and simulation of all-solid-state three-dimensional Li-ion batteries AA Talin, D Ruzmetov, A Kolmakov, K McKelvey, N Ware, F El Gabaly, ...
ACS applied materials & interfaces 8 (47), 32385-32391, 2016
141 2016 Electrical triggering of metal-insulator transition in nanoscale vanadium oxide junctions D Ruzmetov, G Gopalakrishnan, J Deng, V Narayanamurti, ...
Journal of Applied Physics 106 (8), 2009
136 2009 X-ray absorption spectroscopy of vanadium dioxide thin films across the phase-transition boundary D Ruzmetov, SD Senanayake, S Ramanathan
Physical Review B 75 (19), 195102, 2007
112 2007 Infrared reflectance and photoemission spectroscopy studies across the phase transition boundary in thin film vanadium dioxide D Ruzmetov, KT Zawilski, SD Senanayake, V Narayanamurti, ...
Journal of Physics: Condensed Matter 20 (46), 465204, 2008
72 2008 Large scale 2D/3D hybrids based on gallium nitride and transition metal dichalcogenides K Zhang, B Jariwala, J Li, NC Briggs, B Wang, D Ruzmetov, RA Burke, ...
Nanoscale 10 (1), 336-341, 2018
48 2018 High-temperature Hall effect in D Ruzmetov, J Scherschligt, DV Baxter, T Wojtowicz, X Liu, Y Sasaki, ...
Physical Review B 69 (15), 155207, 2004
47 2004 Local electrical characterization of cadmium telluride solar cells using low-energy electron beam HP Yoon, PM Haney, D Ruzmetov, H Xu, MS Leite, BH Hamadani, ...
Solar Energy Materials and Solar Cells 117, 499-504, 2013
46 2013 Insights into capacity loss mechanisms of all-solid-state Li-ion batteries with Al anodes MS Leite, D Ruzmetov, Z Li, LA Bendersky, NC Bartelt, A Kolmakov, ...
Journal of Materials Chemistry A 2 (48), 20552-20559, 2014
44 2014 Epitaxial magnetic perovskite nanostructures D Ruzmetov, Y Seo, LJ Belenky, DM Kim, X Ke, H Sun, V Chandrasekhar, ...
arXiv preprint cond-mat/0507280, 2005
43 2005 Structural and electrical analysis of epitaxial 2D/3D vertical heterojunctions of monolayer MoS2 on GaN TP O'Regan, D Ruzmetov, MR Neupane, RA Burke, AA Herzing, K Zhang, ...
Applied Physics Letters 111 (5), 2017
37 2017 Surface/interface effects on high-performance thin-film all-solid-state Li-ion batteries C Gong, D Ruzmetov, A Pearse, D Ma, JN Munday, G Rubloff, AA Talin, ...
ACS applied materials & interfaces 7 (47), 26007-26011, 2015
32 2015 Metal-insulator transition in thin film vanadium dioxide D Ruzmetov, S Ramanathan
Thin film metal-oxides: fundamentals and applications in electronics and …, 2010
30 2010