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Johann Cervenka
Johann Cervenka
Institute for Microelectronics, TU Wien
Verified email at iue.tuwien.ac.at
Title
Cited by
Cited by
Year
Interface traps density-of-states as a vital component for hot-carrier degradation modeling
SE Tyaginov, IA Starkov, O Triebl, J Cervenka, C Jungemann, S Carniello, ...
Microelectronics Reliability 50 (9-11), 1267-1272, 2010
762010
A comprehensive TCAD approach for assessing electromigration reliability of modern interconnects
H Ceric, RL de Orio, J Cervenka, S Selberherr
IEEE Transactions on Device and Materials Reliability 9 (1), 9-19, 2008
612008
Hot-carrier degradation caused interface state profile—Simulation versus experiment
I Starkov, S Tyaginov, H Enichlmair, J Cervenka, C Jungemann, ...
Journal of Vacuum Science & Technology B 29 (1), 2011
442011
Hot-carrier degradation modeling using full-band Monte-Carlo simulations
SE Tyaginov, IA Starkov, O Triebl, J Cervenka, C Jungemann, S Carniello, ...
2010 17th IEEE International Symposium on the Physical and Failure Analysis …, 2010
272010
Modeling of deep-submicron silicon-based MISFETs with calcium fluoride dielectric
SE Tyaginov, YY Illarionov, MI Vexler, M Bina, J Cervenka, J Franco, ...
Journal of Computational Electronics 13, 733-738, 2014
112014
Quantum correction for DG MOSFETs
M Wagner, M Karner, J Cervenka, M Vasicek, H Kosina, S Holzer, ...
Journal of Computational Electronics 5, 397-400, 2006
112006
The effect of copper grain size statistics on the electromigration lifetime distribution
RL de Orio, H Ceric, J Cervenka, S Selberherr
2009 International Conference on Simulation of Semiconductor Processes and …, 2009
102009
Applicability of macroscopic transport models to decananometer MOSFETs
M Vasicek, J Cervenka, D Esseni, P Palestri, T Grasser
IEEE transactions on electron devices 59 (3), 639-646, 2012
92012
A 2D non-parabolic six-moments model
M Vasicek, J Cervenka, M Wagner, M Karner, T Grasser
Solid-state electronics 52 (10), 1606-1609, 2008
82008
Anisotropic mesh refinement for the simulation of three-dimensional semiconductor manufacturing processes
W Wessner, J Cervenka, C Heitzinger, A Hossinger, S Selberherr
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2006
82006
Three-dimensional mesh generation for device and process simulation
J Cervenka
na, 2004
82004
TCAD simulation of tunneling leakage current in CaF2/Si (111) MIS structures
YY Illarionov, MI Vexler, M Karner, SE Tyaginov, J Cervenka, T Grasser
Current Applied Physics 15 (2), 78-83, 2015
72015
Numerical constraints and non-spatial open boundary conditions for the Wigner equation
R Kosik, J Cervenka, H Kosina
Journal of Computational Electronics 20 (6), 2052-2061, 2021
62021
A study of boron implantation into high Ge content SiGe alloys
R Wittmann, S Uppal, A Hoessinger, J Cervenka, S Selberherr
ECS Transactions 3 (7), 667, 2006
62006
Deterministic solution of the discrete Wigner equation
J Cervenka, P Ellinghaus, M Nedjalkov
Numerical Methods and Applications: 8th International Conference, NMA 2014 …, 2015
52015
Copper microstructure impact on evolution of electromigration induced voids
H Ceric, RL de Orio, J Cervenka, S Selberherr
2009 International Conference on Simulation of Semiconductor Processes and …, 2009
52009
A revised Wigner function approach for stationary quantum transport
R Kosik, J Cervenka, M Thesberg, H Kosina
International Conference on Large-Scale Scientific Computing, 403-410, 2019
42019
Stress‐Induced Anisotropy of Electromigration in Copper Interconnects
H Ceric, RL de Orio, J Cervenka, S Selberherr
AIP Conference Proceedings 1143 (1), 56-62, 2009
42009
Parameter modeling for higher-order transport models in UTB SOI MOSFETs
M Vasicek, J Cervenka, M Wagner, M Karner, T Grasser
Journal of Computational Electronics 7, 168-171, 2008
42008
Generation of unstructured meshes for process and device simulation by means of partial differential equations
J Cervenka, W Wessner, E Al-Ani, T Grasser, S Selberherr
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2006
42006
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Articles 1–20