A systematic analysis of defects in ion-implanted silicon KS Jones, S Prussin, ER Weber
Applied Physics A 45, 1-34, 1988
668 1988 A randomized, double-blind, dose-ranging study comparing wound infiltration of DepoFoam bupivacaine, an extended-release liposomal bupivacaine, to bupivacaine HCl for … K Bramlett, E Onel, ER Viscusi, K Jones
The Knee 19 (5), 530-536, 2012
294 2012 Three-dimensional reconstruction of porous LSCF cathodes D Gostovic, JR Smith, DP Kundinger, KS Jones, ED Wachsman
Electrochemical and solid-state letters 10 (12), B214, 2007
268 2007 L Jiang, SS Li, NT Yeh, JI Chyi, CE Ross, KS Jones
Applied physics letters 82 (12), 1986-1988, 2003
182 2003 Transient enhanced diffusion without {311} defects in low energy B+ ‐implanted silicon LH Zhang, KS Jones, PH Chi, DS Simons
Applied physics letters 67 (14), 2025-2027, 1995
175 1995 Evaluation of the relationship between cathode microstructure and electrochemical behavior for SOFCs JR Smith, A Chen, D Gostovic, D Hickey, D Kundinger, KL Duncan, ...
Solid state ionics 180 (1), 90-98, 2009
157 2009 Effect of fluorine on the diffusion of boron in ion implanted Si DF Downey, JW Chow, E Ishida, KS Jones
Applied Physics Letters 73 (9), 1263-1265, 1998
152 1998 Ambient measurements and source apportionment of fossil fuel and biomass burning black carbon in Ontario RM Healy, U Sofowote, Y Su, J Debosz, M Noble, CH Jeong, JM Wang, ...
Atmospheric Environment 161, 34-47, 2017
134 2017 Analytical methods development and validation J Breaux, K Jones, P Boulas
Pharm. Technol 1, 6-13, 2003
128 2003 Olweus 儿童欺负问卷中文版的修订 张文新， 武建芬
心理发展与教育, 8-12, 1999
127 1999 Direct comparison of the quantized Hall resistance in gallium arsenide and silicon A Hartland, K Jones, JM Williams, BL Gallagher, T Galloway
Physical review letters 66 (8), 969, 1991
126 1991 {311} defects in silicon: The source of the loops J Li, KS Jones
Applied Physics Letters 73 (25), 3748-3750, 1998
123 1998 Nanostructured ion beam-modified Ge films for high capacity Li ion battery anodes NG Rudawski, BL Darby, BR Yates, KS Jones, RG Elliman, AA Volinsky
Applied Physics Letters 100 (8), 2012
95 2012 The effect of impurities on diffusion and activation of ion implanted boron in silicon LS Robertson, R Brindos, KS Jones, ME Law, DF Downey, S Falk, J Liu
MRS Online Proceedings Library (OPL) 610, B5. 8, 2000
94 2000 The effect of implant energy, dose, and dynamic annealing on end‐of‐range damage in Ge+ ‐implanted silicon KS Jones, D Venables
Journal of applied physics 69 (5), 2931-2937, 1991
91 1991 Amorphization and graphitization of single-crystal diamond—A transmission electron microscopy study DP Hickey, KS Jones, RG Elliman
Diamond and Related Materials 18 (11), 1353-1359, 2009
90 2009 Study of reverse annealing behaviors of JY Jin, J Liu, U Jeong, S Mehta, K Jones
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002
83 2002 Ion milling damage in InP and GaAs SJ Pearton, UK Chakrabarti, AP Perley, KS Jones
Journal of applied physics 68 (6), 2760-2768, 1990
81 1990 The influence of ammonia on rapid‐thermal low‐pressure metalorganic chemical vapor deposited TiNx A Katz, A Feingold, S Nakahara, SJ Pearton, E Lane, M Geva, FA Stevie, ...
Journal of applied physics 71 (2), 993-1000, 1992
75 * 1992 Effects of hydrostatic pressure on dopant diffusion in silicon H Park, KS Jones, JA Slinkman, ME Law
Journal of applied physics 78 (6), 3664-3670, 1995
73 1995 