Kevin S. Jones
Zitiert von
Zitiert von
A systematic analysis of defects in ion-implanted silicon
KS Jones, S Prussin, ER Weber
Applied Physics A 45, 1-34, 1988
A randomized, double-blind, dose-ranging study comparing wound infiltration of DepoFoam bupivacaine, an extended-release liposomal bupivacaine, to bupivacaine HCl for …
K Bramlett, E Onel, ER Viscusi, K Jones
The Knee 19 (5), 530-536, 2012
Three-dimensional reconstruction of porous LSCF cathodes
D Gostovic, JR Smith, DP Kundinger, KS Jones, ED Wachsman
Electrochemical and solid-state letters 10 (12), B214, 2007
quantum-dot infrared photodetector with operating temperature up to 260 K
L Jiang, SS Li, NT Yeh, JI Chyi, CE Ross, KS Jones
Applied physics letters 82 (12), 1986-1988, 2003
Transient enhanced diffusion without {311} defects in low energy B+‐implanted silicon
LH Zhang, KS Jones, PH Chi, DS Simons
Applied physics letters 67 (14), 2025-2027, 1995
Evaluation of the relationship between cathode microstructure and electrochemical behavior for SOFCs
JR Smith, A Chen, D Gostovic, D Hickey, D Kundinger, KL Duncan, ...
Solid state ionics 180 (1), 90-98, 2009
Effect of fluorine on the diffusion of boron in ion implanted Si
DF Downey, JW Chow, E Ishida, KS Jones
Applied Physics Letters 73 (9), 1263-1265, 1998
Ambient measurements and source apportionment of fossil fuel and biomass burning black carbon in Ontario
RM Healy, U Sofowote, Y Su, J Debosz, M Noble, CH Jeong, JM Wang, ...
Atmospheric Environment 161, 34-47, 2017
Analytical methods development and validation
J Breaux, K Jones, P Boulas
Pharm. Technol 1, 6-13, 2003
Olweus 儿童欺负问卷中文版的修订
张文新, 武建芬
心理发展与教育, 8-12, 1999
Direct comparison of the quantized Hall resistance in gallium arsenide and silicon
A Hartland, K Jones, JM Williams, BL Gallagher, T Galloway
Physical review letters 66 (8), 969, 1991
{311} defects in silicon: The source of the loops
J Li, KS Jones
Applied Physics Letters 73 (25), 3748-3750, 1998
Nanostructured ion beam-modified Ge films for high capacity Li ion battery anodes
NG Rudawski, BL Darby, BR Yates, KS Jones, RG Elliman, AA Volinsky
Applied Physics Letters 100 (8), 2012
The effect of impurities on diffusion and activation of ion implanted boron in silicon
LS Robertson, R Brindos, KS Jones, ME Law, DF Downey, S Falk, J Liu
MRS Online Proceedings Library (OPL) 610, B5. 8, 2000
The effect of implant energy, dose, and dynamic annealing on end‐of‐range damage in Ge+‐implanted silicon
KS Jones, D Venables
Journal of applied physics 69 (5), 2931-2937, 1991
Amorphization and graphitization of single-crystal diamond—A transmission electron microscopy study
DP Hickey, KS Jones, RG Elliman
Diamond and Related Materials 18 (11), 1353-1359, 2009
Study of reverse annealing behaviors of ultrashallow junction formed using solid phase epitaxial annealing
JY Jin, J Liu, U Jeong, S Mehta, K Jones
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002
Ion milling damage in InP and GaAs
SJ Pearton, UK Chakrabarti, AP Perley, KS Jones
Journal of applied physics 68 (6), 2760-2768, 1990
The influence of ammonia on rapid‐thermal low‐pressure metalorganic chemical vapor deposited TiNx films from tetrakis (dimethylamido) titanium precursor onto …
A Katz, A Feingold, S Nakahara, SJ Pearton, E Lane, M Geva, FA Stevie, ...
Journal of applied physics 71 (2), 993-1000, 1992
Effects of hydrostatic pressure on dopant diffusion in silicon
H Park, KS Jones, JA Slinkman, ME Law
Journal of applied physics 78 (6), 3664-3670, 1995
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