Paweł Holewa
Paweł Holewa
PhD student, Wrocław University of Science and Technology
Bestätigte E-Mail-Adresse bei
Zitiert von
Zitiert von
Enhanced photon-extraction efficiency from InGaAs/GaAs quantum dots in deterministic photonic structures at 1.3 μm fabricated by in-situ electron-beam lithography
N Srocka, A Musiał, PI Schneider, P Mrowiński, P Holewa, S Burger, ...
AIP Advances 8 (8), 085205, 2018
Triggered high-purity telecom-wavelength single-photon generation from p-shell-driven InGaAs/GaAs quantum dot
Ł Dusanowski, P Holewa, A Maryński, A Musiał, T Heuser, N Srocka, ...
Optics express 25 (25), 31122-31129, 2017
High‐purity triggered single‐photon emission from symmetric single InAs/InP quantum dots around the telecom C‐band window
A Musiał, P Holewa, P Wyborski, M Syperek, A Kors, JP Reithmaier, ...
Advanced Quantum Technologies 3 (2), 1900082, 2020
Optical and electronic properties of low-density InAs/InP quantum dot-like structures devoted to single-photon emitters at telecom wavelengths
P Holewa, M Gawełczyk, C Ciostek, P Wyborski, S Kadkhodazadeh, ...
Physical Review B 101 (19), 195304, 2020
Thresholdless Transition to Coherent Emission at Telecom Wavelengths from Coaxial Nanolasers with Excitation Power Dependent β‐Factors
S Kreinberg, K Laiho, F Lohof, WE Hayenga, P Holewa, C Gies, ...
Laser & Photonics Reviews 14 (12), 2000065, 2020
Synthesis and systematic optical investigation of selective area droplet epitaxy of InAs/InP quantum dots assisted by block copolymer lithography
A Shikin, E Lebedkina, C Ciostek, P Holewa, S Ndoni, K Almdal, K Yvind, ...
Optical Materials Express 9 (4), 1738-1748, 2019
Optical and Electronic Properties of Symmetric Quantum Dots Formed by Ripening in Molecular Beam Epitaxy: A Potential System for Broad …
P Holewa, M Gawełczyk, A Maryński, P Wyborski, JP Reithmaier, G Sęk, ...
Physical Review Applied 14 (6), 064054, 2020
Thermal stability of emission from single InGaAs/GaAs quantum dots at the telecom O-band
P Holewa, M Burakowski, A Musiał, N Srocka, D Quandt, A Strittmatter, ...
Scientific Reports 10 (1), 1-9, 2020
Droplet epitaxy InAs/InP quantum dots in etched pits for single photon emitters at 1550 nm: morphology, optical and electronic properties, and etching kinetics
P Holewa, S Kadkhodazadeh, M Gawełczyk, P Baluta, VG Dubrovskii, ...
arXiv preprint arXiv:2104.09465, 2021
Bright Quantum Dot Single-Photon Emitters at Telecom Bands Heterogeneously Integrated with Si
P Holewa, A Sakanas, UM Gür, P Mrowiński, BY Wang, K Yvind, ...
arXiv preprint arXiv:2104.07589, 2021
Optical Properties of Site-Selectively Grown InAs/InP Quantum Dots with Predefined Positioning by Block Copolymer Lithography
P Holewa, J Jasiński, A Shikin, E Lebedkina, A Maryński, M Syperek, ...
Materials 14 (2), 391, 2021
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