Raouf Bennaceur
Raouf Bennaceur
Universite Tunis El Manar
Verified email at fst.rnu.tn
Cited by
Cited by
Effect of pH on the properties of ZnS thin films grown by chemical bath deposition
TB Nasr, N Kamoun, M Kanzari, R Bennaceur
Thin solid films 500 (1-2), 4-8, 2006
Propriétés optiques des couches minces de SnO2 et CuInS2 airless spray
S Belgacem, R Bennaceur
Revue de Physique Appliquée 25 (12), 1245-1258, 1990
Vapour-etching-based porous silicon: a new approach
M Saadoun, N Mliki, H Kaabi, K Daoudi, B Bessaıs, H Ezzaouia, ...
Thin Solid Films 405 (1-2), 29-34, 2002
Structure, surface composition, and electronic properties of and
N Kamoun, S Belgacem, M Amlouk, R Bennaceur, J Bonnet, F Touhari, ...
Journal of Applied Physics 89 (5), 2766-2771, 2001
Structural analysis of indium sulphide thin films elaborated by chemical bath deposition
B Yahmadi, N Kamoun, R Bennaceur, M Mnari, M Dachraoui, K Abdelkrim
Thin Solid Films 473 (2), 201-207, 2005
Electronic structure and optical properties of Sb2S3 crystal
TB Nasr, H Maghraoui-Meherzi, HB Abdallah, R Bennaceur
Physica B: Condensed Matter 406 (2), 287-292, 2011
Formation of luminescent (NH4) 2SiF6 phase from vapour etching-based porous silicon
M Saadoun, B Bessaıs, N Mliki, M Ferid, H Ezzaouia, R Bennaceur
Applied surface science 210 (3-4), 240-248, 2003
Formation of porous silicon for large-area silicon solar cells: A new method
M Saadoun, H Ezzaouia, B Bessaıs, MF Boujmil, R Bennaceur
Solar energy materials and solar cells 59 (4), 377-385, 1999
An optical soliton pair among absorbing three-level atoms
H Eleuch, R Bennaceur
Journal of Optics A: Pure and Applied Optics 5 (5), 528, 2003
Nonlinear dissipation and the quantum noise of light in semiconductor microcavities
H Eleuch, R Bennaceur
Journal of Optics B: Quantum and Semiclassical Optics 6 (4), 189, 2004
Quantum model of emission in a weakly non ideal plasma
H Eleuch, NB Nessib, R Bennaceur
The European Physical Journal D-Atomic, Molecular, Optical and Plasma …, 2004
Improvement of transport parameters in solar grade monocrystalline silicon by application of a sacrificial porous silicon layer
N Khedher, M Hajji, M Bouaıcha, MF Boujmil, H Ezzaouia, B Bessaıs, ...
Solid state communications 123 (1-2), 7-10, 2002
Normal-state properties of BEDT-TTF compounds and the superconductivity pairing mechanism
R Louati, S Charfi-Kaddour, AB Ali, R Bennaceur, M Héritier
Physical Review B 62 (9), 5957, 2000
Gettering impurities from crystalline silicon by phosphorus diffusion using a porous silicon layer
N Khedher, M Hajji, M Hassen, AB Jaballah, B Ouertani, H Ezzaouia, ...
Solar energy materials and solar cells 87 (1-4), 605-611, 2005
Synthesis and characterization of nanocrystallized In2S3 thin films via CBD technique
B Yahmadi, N Kamoun, C Guasch, R Bennaceur
Materials Chemistry and Physics 127 (1-2), 239-247, 2011
Correlation effects in ET compounds
R Louati, S Charfi-Kaddour, AB Ali, R Bennaceur, M Heritier
Synthetic metals 103 (1-3), 1857-1860, 1999
Technological, structural and morphological aspects of screen-printed ITO used in ITO/Si type structure
B Bessais, N Mliki, R Bennaceur
Semiconductor science and technology 8 (1), 116, 1993
Morphological changes in porous silicon nanostructures: non-conventional photoluminescence shifts and correlation with optical absorption
B Bessaıs, OB Younes, H Ezzaouia, N Mliki, MF Boujmil, M Oueslati, ...
Journal of luminescence 90 (3-4), 101-109, 2000
Caractérisations structurale et morphologique des couches minces de CuInS2 et d'In-S" airless spray"
N Kamoun, S Belgacem, M Amlouk, R Bennaceur, K Abdelmoula, ...
Journal de Physique III 4 (3), 473-491, 1994
Self-consistent random phase approximation: Application to the Hubbard model for finite number of sites
M Jemaï, P Schuck, J Dukelsky, R Bennaceur
Physical Review B 71 (8), 085115, 2005
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