| Modulation of synaptic plasticity mimicked in al nanoparticle‐embedded IGZO synaptic transistor J Kim, Y Kim, O Kwon, T Kim, S Oh, S Jin, W Park, JD Kwon, SW Hong, ... Advanced Electronic Materials 6 (4), 1901072, 2020 | 52 | 2020 |
| Low Power MoS2/Nb2O5 Memtransistor Device with Highly Reliable Heterosynaptic Plasticity JH Nam, S Oh, HY Jang, O Kwon, H Park, W Park, JD Kwon, Y Kim, B Cho Advanced Functional Materials 31 (40), 2104174, 2021 | 43 | 2021 |
| Al2O3-Induced Sub-Gap Doping on the IGZO Channel for the Detection of Infrared Light J Kim, TH Kim, S Oh, JH Nam, HY Jang, Y Kim, N Yamada, H Kobayashi, ... ACS Applied Electronic Materials 2 (5), 1478-1483, 2020 | 18 | 2020 |
| Brain-inspired ferroelectric Si nanowire synaptic device M Lee, W Park, H Son, J Seo, O Kwon, S Oh, MG Hahm, UJ Kim, B Cho APL Materials 9 (3), 2021 | 16 | 2021 |
| Improvement of the Bias Stress Stability in 2D MoS2 and WS2 Transistors with a TiO2 Interfacial Layer W Park, Y Pak, HY Jang, JH Nam, TH Kim, S Oh, SM Choi, Y Kim, B Cho Nanomaterials 9 (8), 1155, 2019 | 12 | 2019 |
| MoS2/p-Si heterojunction with graphene interfacial layer for high performance 940 nm infrared photodetector W Seo, W Park, HY Seo, S Oh, O Kwon, SH Jeong, MJ Kim, SK Lee, ... Applied Surface Science 604, 154485, 2022 | 10 | 2022 |
| In-depth analysis on electrical parameters of floating gate IGZO synaptic transistor affecting pattern recognition accuracy O Kwon, S Oh, H Park, SH Jeong, W Park, B Cho Nanotechnology 33 (21), 215201, 2022 | 10 | 2022 |
| Dual-Terminal Stimulated Heterosynaptic Plasticity of IGZO Memtransistor with Al2O3/TiO2 Double-Oxide Structure H Park, S Oh, SH Jeong, O Kwon, HY Seo, JD Kwon, Y Kim, W Park, ... ACS Applied Electronic Materials 4 (6), 2923-2932, 2022 | 8 | 2022 |
| Low Power Switching Characteristics of CNT Field Effect Transistor Device with Al-Doped ZrHfO2 Gate Dielectric S Oh, SW Lee, D Kim, JH Choi, HC Chae, SM Choi, JH Ahn, B Cho Journal of Nanomaterials 2018, 2018 | 5 | 2018 |
| Unveiling the Role of Al2O3 Interlayer in Indium–Gallium–Zinc–Oxide Transistors TH Kim, W Park, S Oh, SY Kim, N Yamada, H Kobayashi, HY Jang, ... physica status solidi (a) 218 (6), 2000621, 2021 | 4 | 2021 |
| Comprehensive study on trap-induced bias instability via high-pressure D2 and N2 annealing JY Ku, KS Lee, DH Jung, DH Wang, S Oh, K Lee, B Cho, H Bae, JY Park IEEE Transactions on Device and Materials Reliability, 2023 | 2 | 2023 |
| Low Power MoS2/Nb2O5 Memtransistor Device with Highly Reliable Heterosynaptic Plasticity (Adv. Funct. Mater. 40/2021) JH Nam, S Oh, HY Jang, O Kwon, H Park, W Park, JD Kwon, Y Kim, B Cho Advanced Functional Materials 31 (40), 2170294, 2021 | 2 | 2021 |
| Light-stimulated long-term potentiation behavior enhanced in a HfO2/InGaZnO photonic synapse S Oh, O Kwon, HY Seo, SH Jeong, HK Park, W Park, B Cho Applied Materials Today 34, 101919, 2023 | 1 | 2023 |
| Increased Mobility and Reduced Hysteresis of MoS2 Field-Effect Transistors via Direct Surface Precipitation of CsPbBr3-Nanoclusters for Charge Transfer Doping YZ Kang, GH An, MG Jeon, SJ Shin, SJ Kim, M Choi, JB Lee, TY Kim, ... Nano Letters 23 (19), 8914-8922, 2023 | | 2023 |
| Conduction Mechanism in Acceptor- or Donor-Doped ZrO2 Bulk and Thin Films M Kim, S Oh, B Cho, JH Joo ACS Applied Materials & Interfaces 15 (26), 31627-31634, 2023 | | 2023 |
| Designing Buried-Gate Ingazno Transistors for High-Yield and Reliable Switching Characteristics DH Kim, S Oh, O Kwon, SH Jeong, HY Seo, E Cho, MJ Kim, W Seo, ... Available at SSRN 4639296, 0 | | |
