T. M. Hazard
T. M. Hazard
MIT Lincoln Laboratory
Bestätigte E-Mail-Adresse bei
Zitiert von
Zitiert von
Scalable gate architecture for a one-dimensional array of semiconductor spin qubits
DM Zajac, TM Hazard, X Mi, E Nielsen, JR Petta
Physical Review Applied 6 (5), 054013, 2016
Isotopically enhanced triple-quantum-dot qubit
K Eng, TD Ladd, A Smith, MG Borselli, AA Kiselev, BH Fong, KS Holabird, ...
Science advances 1 (4), e1500214, 2015
Shuttling a single charge across a one-dimensional array of silicon quantum dots
AR Mills, DM Zajac, MJ Gullans, FJ Schupp, TM Hazard, JR Petta
Nature communications 10 (1), 1063, 2019
Suppression of qubit crosstalk in a tunable coupling superconducting circuit
P Mundada, G Zhang, T Hazard, A Houck
Physical Review Applied 12 (5), 054023, 2019
A reconfigurable gate architecture for Si/SiGe quantum dots
DM Zajac, TM Hazard, X Mi, K Wang, JR Petta
Applied Physics Letters 106 (22), 2015
Experimental Realization of a Protected Superconducting Circuit Derived from the Qubit
A Gyenis, PS Mundada, A Di Paolo, TM Hazard, X You, DI Schuster, ...
PRX Quantum 2 (1), 010339, 2021
Direct generation of accelerating Airy beams using a 3/2 phase-only pattern
DM Cottrell, JA Davis, TM Hazard
Optics letters 34 (17), 2634-2636, 2009
Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots
MG Borselli, K Eng, ET Croke, BM Maune, B Huang, RS Ross, AA Kiselev, ...
Applied Physics Letters 99 (6), 2011
Nanowire superinductance fluxonium qubit
TM Hazard, A Gyenis, A Di Paolo, AT Asfaw, SA Lyon, A Blais, AA Houck
Physical review letters 122 (1), 010504, 2019
Single-spin relaxation in a synthetic spin-orbit field
F Borjans, DM Zajac, TM Hazard, JR Petta
Physical Review Applied 11 (4), 044063, 2019
Magnetotransport studies of mobility limiting mechanisms in undoped Si/SiGe heterostructures
X Mi, TM Hazard, C Payette, K Wang, DM Zajac, JV Cady, JR Petta
Physical Review B 92 (3), 035304, 2015
Undoped accumulation-mode Si/SiGe quantum dots
MG Borselli, K Eng, RS Ross, TM Hazard, KS Holabird, B Huang, ...
Nanotechnology 26 (37), 375202, 2015
Semiconductor quantum dot device and method for forming a scalable linear array of quantum dots
J Petta, D Zajac, T Hazard
US Patent 10,192,976, 2019
High-fidelity, frequency-flexible two-qubit fluxonium gates with a transmon coupler
L Ding, M Hays, Y Sung, B Kannan, J An, A Di Paolo, AH Karamlou, ...
Physical Review X 13 (3), 031035, 2023
Experimental realization of an intrinsically error-protected superconducting qubit
A Gyenis, PS Mundada, A Di Paolo, TM Hazard, X You, DI Schuster, ...
arXiv preprint arXiv:1910.07542, 2019
A low-disorder metal-oxide-silicon double quantum dot
JS Kim, TM Hazard, AA Houck, SA Lyon
Applied Physics Letters 114 (4), 2019
Characterization of superconducting through-silicon vias as capacitive elements in quantum circuits
TM Hazard, W Woods, D Rosenberg, R Das, CF Hirjibehedin, DK Kim, ...
Applied Physics Letters 123 (15), 2023
Extensible circuit-QED architecture via amplitude-and frequency-variable microwaves
A Di Paolo, C Leroux, TM Hazard, K Serniak, S Gustavsson, A Blais, ...
arXiv preprint arXiv:2204.08098, 2022
Improving quantum hardware: Building new superconducting qubits and couplers
TM Hazard
Princeton University, 2019
Superconducting-semiconducting voltage-tunable qubits in the third dimension
TM Hazard, AJ Kerman, K Serniak, C Tahan
Physical Review Applied 20 (3), 034056, 2023
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