Gerhard Rzepa
Gerhard Rzepa
Global TCAD Solutions
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Zitiert von
Zitiert von
The role of charge trapping in MoS2/SiO2 and MoS2/hBN field-effect transistors
YY Illarionov, G Rzepa, M Waltl, T Knobloch, A Grill, MM Furchi, T Mueller, ...
2D Materials 3 (3), 035004, 2016
Long-term stability and reliability of black phosphorus field-effect transistors
YY Illarionov, M Waltl, G Rzepa, JS Kim, S Kim, A Dodabalapur, ...
ACS nano 10 (10), 9543-9549, 2016
Comphy—A compact-physics framework for unified modeling of BTI
G Rzepa, J Franco, B O’Sullivan, A Subirats, M Simicic, G Hellings, ...
Microelectronics Reliability 85, 49-65, 2018
Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence
W Goes, Y Wimmer, AM El-Sayed, G Rzepa, M Jech, AL Shluger, ...
Microelectronics Reliability 87, 286-320, 2018
On the microscopic structure of hole traps in pMOSFETs
T Grasser, W Goes, Y Wimmer, F Schanovsky, G Rzepa, M Waltl, K Rott, ...
2014 IEEE International Electron Devices Meeting, 21.1. 1-21.1. 4, 2014
A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability
B Kaczer, J Franco, P Weckx, PJ Roussel, V Putcha, E Bury, M Simicic, ...
Microelectronics Reliability 81, 186-194, 2018
Highly-stable black phosphorus field-effect transistors with low density of oxide traps
YY Illarionov, M Waltl, G Rzepa, T Knobloch, JS Kim, D Akinwande, ...
npj 2D Materials and Applications 1 (1), 23, 2017
Gate-sided hydrogen release as the origin of" permanent" NBTI degradation: From single defects to lifetimes
T Grasser, M Waltl, Y Wimmer, W Goes, R Kosik, G Rzepa, H Reisinger, ...
2015 IEEE International Electron Devices Meeting (IEDM), 20.1. 1-20.1. 4, 2015
A Physical Model for the Hysteresis in MoS2 Transistors
T Knobloch, G Rzepa, YY Illarionov, M Waltl, F Schanovsky, B Stampfer, ...
IEEE Journal of the Electron Devices Society 6, 972-978, 2018
Energetic mapping of oxide traps in MoS2 field-effect transistors
YY Illarionov, T Knobloch, M Waltl, G Rzepa, A Pospischil, DK Polyushkin, ...
2D Materials 4 (2), 025108, 2017
On the characterization and separation of trapping and ferroelectric behavior in HfZrO FET
MNK Alam, B Kaczer, LÅ Ragnarsson, M Popovici, G Rzepa, N Horiguchi, ...
IEEE Journal of the Electron Devices Society 7, 855-862, 2019
Complete extraction of defect bands responsible for instabilities in n and pFinFETs
G Rzepa, M Waltl, W Goes, B Kaczer, J Franco, T Chiarella, N Horiguchi, ...
2016 IEEE Symposium on VLSI Technology, 1-2, 2016
The “permanent” component of NBTI revisited: Saturation, degradation-reversal, and annealing
T Grasser, M Waltl, G Rzepa, W Goes, Y Wimmer, AM El-Sayed, ...
2016 IEEE International Reliability Physics Symposium (IRPS), 5A-2-1-5A-2-8, 2016
NBTI modeling in analog circuits and its application to long-term aging simulations
KU Giering, C Sohrmann, G Rzepa, L Heiß, T Grasser, R Jancke
2014 IEEE International Integrated Reliability Workshop Final Report (IIRW …, 2014
Efficient physical defect model applied to PBTI in high-κ stacks
G Rzepa, J Franco, A Subirats, M Jech, A Chasin, A Grill, M Waltl, ...
2017 IEEE International Reliability Physics Symposium (IRPS), XT-11.1-XT-11.6, 2017
Vertically stacked nanowire MOSFETs for sub-10nm nodes: Advanced topography, device, variability, and reliability simulations
M Karner, O Baumgartner, Z Stanojević, F Schanovsky, G Strof, ...
2016 IEEE International Electron Devices Meeting (IEDM), 30.7. 1-30.7. 4, 2016
Microscopic oxide defects causing BTI, RTN, and SILC on high-k FinFETs
G Rzepa, M Waltl, W Goes, B Kaczer, T Grasser
2015 International Conference on Simulation of Semiconductor Processes and …, 2015
Superior NBTI in High- SiGe Transistors–Part I: Experimental
M Waltl, G Rzepa, A Grill, W Goes, J Franco, B Kaczer, L Witters, J Mitard, ...
IEEE Transactions on Electron Devices 64 (5), 2092-2098, 2017
Physical modeling of bias temperature instabilities in SiC MOSFETs
C Schleich, J Berens, G Rzepa, G Pobegen, G Rescher, S Tyaginov, ...
2019 IEEE International Electron Devices Meeting (IEDM), 20.5. 1-20.5. 4, 2019
Implications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress
T Grasser, M Waltl, K Puschkarsky, B Stampfer, G Rzepa, G Pobegen, ...
2017 IEEE International Reliability Physics Symposium (IRPS), 6A-2.1-6A-2.6, 2017
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