Cobalt oxide based gas sensors on silicon substrate for operation at low temperatures J Wöllenstein, M Burgmair, G Plescher, T Sulima, J Hildenbrand, ... Sensors and Actuators B: Chemical 93 (1-3), 442-448, 2003 | 275 | 2003 |
P-channel tunnel field-effect transistors down to sub-50 nm channel lengths KK Bhuwalka, M Born, M Schindler, M Schmidt, T Sulima, I Eisele Japanese journal of applied physics 45 (4S), 3106, 2006 | 131 | 2006 |
Fringing-Induced Drain Current Improvement in the Tunnel Field-Effect Transistor With High- Gate Dielectrics M Schlosser, KK Bhuwalka, M Sauter, T Zilbauer, T Sulima, I Eisele IEEE transactions on electron devices 56 (1), 100-108, 2008 | 119 | 2008 |
Boron in mesoporous Si—where have all the carriers gone? G Polisski, D Kovalev, G Dollinger, T Sulima, F Koch Physica B: Condensed Matter 273, 951-954, 1999 | 80 | 1999 |
Tunnel FET: A CMOS device for high temperature applications M Born, KK Bhuwalka, M Schindler, U Abelein, M Schmidt, T Sulima, ... 2006 25th international conference on microelectronics, 124-127, 2006 | 76 | 2006 |
Improved reliability by reduction of hot-electron damage in the vertical impact-ionization MOSFET (I-MOS) U Abelein, M Born, KK Bhuwalka, M Schindler, M Schlosser, T Sulima, ... IEEE electron device letters 28 (1), 65-67, 2006 | 65 | 2006 |
A novel vertical impact ionisation MOSFET (I-MOS) concept U Abelein, M Born, KK Bhuwalka, M Schindler, M Schmidt, T Sulima, ... 2006 25th International Conference on Microelectronics, 121-123, 2006 | 43 | 2006 |
Performance improvement in vertical surface tunneling transistors by a boron surface phase W Hansch, P Borthen, J Schulze, C Fink, T Sulima, I Eisele Japanese Journal of Applied Physics 40 (5R), 3131, 2001 | 42 | 2001 |
Doping profile dependence of the vertical impact ionization MOSFET’s (I-MOS) performance U Abelein, A Assmuth, P Iskra, M Schindler, T Sulima, I Eisele Solid-state electronics 51 (10), 1405-1411, 2007 | 38 | 2007 |
Annealing and deposition effects of the chemical composition of silicon-rich nitride KN Andersen, WE Svendsen, T Stimpel-Lindner, T Sulima, ... Applied surface science 243 (1-4), 401-408, 2005 | 38 | 2005 |
The role of atomic hydrogen in pre-epitaxial silicon substrate cleaning A Aßmuth, T Stimpel-Lindner, O Senftleben, A Bayerstadler, T Sulima, ... Applied surface science 253 (20), 8389-8393, 2007 | 37 | 2007 |
Measurement of short-lived radon progenies by simultaneous αγ-spectrometry at the German radon reference chamber A Paul, S Röttger, A Honig, T Sulima, A Buchholz, U Keyser Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 1999 | 33 | 1999 |
Examination and evaluation of La2O3 as gate dielectric for sub-100 nm CMOS and DRAM technology V Capodieci, F Wiest, T Sulima, J Schulze, I Eisele Microelectronics Reliability 45 (5-6), 937-940, 2005 | 27 | 2005 |
Vertical 40 nm impact ionization MOSFET (I-MOS) for high temperature applications U Abelein, A Assmuth, P Iskra, M Reinl, M Schlosser, T Sulima, I Eisele 2008 26th International Conference on Microelectronics, 287-290, 2008 | 24 | 2008 |
Phonon assisted tunneling in gated pin diodes S Sedlmaier, J Schulze, T Sulima, C Fink, C Tolksdorf, A Bayerstadler, ... Materials Science and Engineering: B 89 (1-3), 116-119, 2002 | 20 | 2002 |
Growth and modification of thin a-Si: H/a-Ge: H bi-layers to sacrificial c-SiGe alloys through ArF-Excimer laser assisted processing S Chiussi, F Gontad, R Rodríguez, C Serra, J Serra, B León, T Sulima, ... Applied surface science 254 (19), 6030-6033, 2008 | 17 | 2008 |
Dopant diffusion during rapid thermal oxidation A Stadler, T Sulima, J Schulze, C Fink, A Kottantharayil, W Hansch, ... Solid-State Electronics 44 (5), 831-835, 2000 | 17 | 2000 |
Vertical MOS-gated pin-diodes: MOS-gated tunneling transistors in Si (100) and Si (111) J Schulze, C Fink, T Sulima, I Eisele, W Hansch Thin solid films 380 (1-2), 154-157, 2000 | 15 | 2000 |
The formation of silicon (111) boron surface phases and their influence on the epitaxial growth of silicon and germanium J Schulze, H Baumgärtner, C Fink, G Dollinger, I Gentchev, L Görgens, ... Thin Solid Films 369 (1-2), 10-15, 2000 | 14 | 2000 |
Iridium oxide as low temperature NO/sub 2/-sensitive material for work function-based gas sensors A Karthigeyan, RP Gupta, K Scharnagl, M Burgmair, M Zimmer, T Sulima, ... IEEE Sensors Journal 4 (2), 189-194, 2004 | 13 | 2004 |