| High efficiency graphene solar cells by chemical doping X Miao, S Tongay, MK Petterson, K Berke, AG Rinzler, BR Appleton, ... Nano letters 12 (6), 2745-2750, 2012 | 1111 | 2012 |
| Rectification at graphene-semiconductor interfaces: zero-gap semiconductor-based diodes S Tongay, M Lemaitre, X Miao, B Gila, BR Appleton, AF Hebard Physical Review X 2 (1), 011002, 2012 | 386 | 2012 |
| Tuning Schottky diodes at the many-layer-graphene/semiconductor interface by doping S Tongay, T Schumann, X Miao, BR Appleton, AF Hebard Carbon 49 (6), 2033-2038, 2011 | 130 | 2011 |
| Extinction of ferromagnetism in highly ordered pyrolytic graphite by annealing X Miao, S Tongay, AF Hebard Carbon 50 (4), 1614-1618, 2012 | 29 | 2012 |
| Sub-block mode for non-volatile memory X Yang, HY Tseng, X Miao, D Dutta US Patent 10,157,680, 2018 | 23 | 2018 |
| Strain-induced suppression of weak localization in CVD-grown graphene X Miao, S Tongay, AF Hebard Journal of Physics: Condensed Matter 24 (47), 475304, 2012 | 11 | 2012 |
| Multi-state program using controlled weak boosting for non-volatile memory D Dutta, X Miao, M Masuduzzaman US Patent 9,842,657, 2017 | 10 | 2017 |
| Word line dependent two strobe sensing mode for nonvolatile storage elements D Dutta, X Miao, GJ Hemink US Patent 9,443,606, 2016 | 10 | 2016 |
| Two-strobe sensing for nonvolatile storage D Dutta, X Miao, GJ Hemink US Patent App. 14/525,691, 2016 | 9 | 2016 |
| Program sequencing X Miao, K Oowada, G Sano, D Dutta US Patent 9,865,352, 2018 | 4 | 2018 |
| Current Graphene Research—Going beyond the Pure Monolayer S Tongay, M Lemaitre, X Miao, B Gila, BR Appleton, AF Hebard Phys. Rev 10 (2), 011002, 2012 | 2 | 2012 |
| Suppression of Weak-Localization Effect in Strained CVD--grown Graphene X Miao, S Tongay, AF Hebard APS March Meeting Abstracts 2012, J12. 007, 2012 | | 2012 |
| Extinction of ferromagnetism in HOPG by thermal annealing X Miao, A Hebard, S Tongay, B Appleton APS March Meeting Abstracts 2011, L37. 008, 2011 | | 2011 |
| Tuning the Schottky barrier across graphite/semiconductor junctions by bromine intercalation S Tongay, X Miao, T Schumann, AF Hebard APS March Meeting Abstracts 2010, Q22. 014, 2010 | | 2010 |
| Tuning Schottky barrier across graphite-graphene/semiconductor junction by bromine intercalation S Tongay, T Schumann, XC Miao, AF Hebard APS March Meeting Abstracts 2010, V30. 008, 2010 | | 2010 |
Arthur HebardProfessor of PhysicsBestätigte E-Mail-Adresse bei phys.ufl.edu
