Eric A. G. Webster
Eric A. G. Webster
University of Edinburgh
Bestätigte E-Mail-Adresse bei quantum-si.com
Titel
Zitiert von
Zitiert von
Jahr
Scaleable single-photon avalanche diode structures in nanometer CMOS technology
JA Richardson, EAG Webster, LA Grant, RK Henderson
IEEE Transactions on Electron Devices 58 (7), 2028-2035, 2011
1302011
A high-performance single-photon avalanche diode in 130-nm CMOS imaging technology
EAG Webster, LA Grant, RK Henderson
IEEE Electron Device Letters 33 (11), 1589-1591, 2012
1022012
A single-photon avalanche diode in 90-nm CMOS imaging technology with 44% photon detection efficiency at 690 nm
EAG Webster, JA Richardson, LA Grant, D Renshaw, RK Henderson
IEEE Electron Device Letters 33 (5), 694-696, 2012
952012
Single photon avalanche diode for CMOS circuits
EAG Webster, RK Henderson
US Patent 9,178,100, 2015
872015
Back side illuminated single photon avalanche diode imaging sensor with high short wavelength detection efficiency
EAG Webster
US Patent 9,331,116, 2016
442016
Single photon avalanche diode imaging sensor for complementary metal oxide semiconductor stacked chip applications
EAG Webster
US Patent 9,312,401, 2016
402016
Visible and infrared image sensor
EAG Webster, HE Rhodes, D Massetti
US Patent 9,806,122, 2017
372017
Back side illuminated image sensor with guard ring region reflecting structure
EAG Webster
US Patent 9,685,576, 2017
37*2017
A 3× 3, 5µm pitch, 3-transistor single photon avalanche diode array with integrated 11V bias generation in 90nm CMOS technology
RK Henderson, EAG Webster, R Walker, JA Richardson, LA Grant
2010 International Electron Devices Meeting, 14.2. 1-14.2. 4, 2010
352010
Enhanced back side illuminated near infrared image sensor
EAG Webster
US Patent 9,825,073, 2017
302017
Method of fabricating a single photon avalanche diode imaging sensor
EAG Webster
US Patent 9,209,320, 2015
292015
Spad sensor circuit with biasing circuit
EAG Webster, RK Henderson
US Patent App. 14/150,346, 2014
292014
Stacked chip SPAD image sensor
EAG Webster, T Dai
US Patent 9,299,732, 2016
242016
Single-photon avalanche diodes in 90 nm CMOS imaging technology with sub-1 Hz median dark count rate
EAG Webster, JA Richardson, LA Grant, RK Henderson
Proc. Int. Image Sensor Workshop, 262-265, 2011
242011
A 1280× 1080 4.2 µm split-diode pixel hdr sensor in 110 nm bsi cmos process
T Willassen, J Solhusvik, R Johansson, S Yaghmai, H Rhodes, S Manabe, ...
Proceedings of the International Image Sensor Workshop, Vaals, The …, 2015
232015
Per-pixel dark current spectroscopy measurement and analysis in CMOS image sensors
EAG Webster, RL Nicol, L Grant, D Renshaw
IEEE Transactions on electron devices 57 (9), 2176-2182, 2010
232010
An infra-red sensitive, low noise, single-photon avalanche diode in 90nm CMOS
EAG Webster, JA Richardson, LA Grant, D Renshaw, RK Henderson
Workshop, Japan, 102-105, 1911
191911
A TCAD and spectroscopy study of dark count mechanisms in single-photon avalanche diodes
EAG Webster, RK Henderson
IEEE transactions on electron devices 60 (12), 4014-4019, 2013
182013
Transient single-photon avalanche diode operation, minority carrier effects, and bipolar latch up
EAG Webster, LA Grant, RK Henderson
IEEE transactions on electron devices 60 (3), 1188-1194, 2013
182013
A 2um diameter, 9hz dark count, single photon avalanche diode in 130nm cmos technology
JA Richardson, LA Grant, EAG Webster, RK Henderson
2010 Proceedings of the European Solid State Device Research Conference, 257-260, 2010
182010
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