| Scaleable single-photon avalanche diode structures in nanometer CMOS technology JA Richardson, EAG Webster, LA Grant, RK Henderson IEEE Transactions on Electron Devices 58 (7), 2028-2035, 2011 | 130 | 2011 |
| A high-performance single-photon avalanche diode in 130-nm CMOS imaging technology EAG Webster, LA Grant, RK Henderson IEEE Electron Device Letters 33 (11), 1589-1591, 2012 | 102 | 2012 |
| A single-photon avalanche diode in 90-nm CMOS imaging technology with 44% photon detection efficiency at 690 nm EAG Webster, JA Richardson, LA Grant, D Renshaw, RK Henderson IEEE Electron Device Letters 33 (5), 694-696, 2012 | 95 | 2012 |
| Single photon avalanche diode for CMOS circuits EAG Webster, RK Henderson US Patent 9,178,100, 2015 | 87 | 2015 |
| Back side illuminated single photon avalanche diode imaging sensor with high short wavelength detection efficiency EAG Webster US Patent 9,331,116, 2016 | 44 | 2016 |
| Single photon avalanche diode imaging sensor for complementary metal oxide semiconductor stacked chip applications EAG Webster US Patent 9,312,401, 2016 | 40 | 2016 |
| Visible and infrared image sensor EAG Webster, HE Rhodes, D Massetti US Patent 9,806,122, 2017 | 37 | 2017 |
| Back side illuminated image sensor with guard ring region reflecting structure EAG Webster US Patent 9,685,576, 2017 | 37* | 2017 |
| A 3× 3, 5µm pitch, 3-transistor single photon avalanche diode array with integrated 11V bias generation in 90nm CMOS technology RK Henderson, EAG Webster, R Walker, JA Richardson, LA Grant 2010 International Electron Devices Meeting, 14.2. 1-14.2. 4, 2010 | 35 | 2010 |
| Enhanced back side illuminated near infrared image sensor EAG Webster US Patent 9,825,073, 2017 | 30 | 2017 |
| Method of fabricating a single photon avalanche diode imaging sensor EAG Webster US Patent 9,209,320, 2015 | 29 | 2015 |
| Spad sensor circuit with biasing circuit EAG Webster, RK Henderson US Patent App. 14/150,346, 2014 | 29 | 2014 |
| Stacked chip SPAD image sensor EAG Webster, T Dai US Patent 9,299,732, 2016 | 24 | 2016 |
| Single-photon avalanche diodes in 90 nm CMOS imaging technology with sub-1 Hz median dark count rate EAG Webster, JA Richardson, LA Grant, RK Henderson Proc. Int. Image Sensor Workshop, 262-265, 2011 | 24 | 2011 |
| A 1280× 1080 4.2 µm split-diode pixel hdr sensor in 110 nm bsi cmos process T Willassen, J Solhusvik, R Johansson, S Yaghmai, H Rhodes, S Manabe, ... Proceedings of the International Image Sensor Workshop, Vaals, The …, 2015 | 23 | 2015 |
| Per-pixel dark current spectroscopy measurement and analysis in CMOS image sensors EAG Webster, RL Nicol, L Grant, D Renshaw IEEE Transactions on electron devices 57 (9), 2176-2182, 2010 | 23 | 2010 |
| An infra-red sensitive, low noise, single-photon avalanche diode in 90nm CMOS EAG Webster, JA Richardson, LA Grant, D Renshaw, RK Henderson Workshop, Japan, 102-105, 1911 | 19 | 1911 |
| A TCAD and spectroscopy study of dark count mechanisms in single-photon avalanche diodes EAG Webster, RK Henderson IEEE transactions on electron devices 60 (12), 4014-4019, 2013 | 18 | 2013 |
| Transient single-photon avalanche diode operation, minority carrier effects, and bipolar latch up EAG Webster, LA Grant, RK Henderson IEEE transactions on electron devices 60 (3), 1188-1194, 2013 | 18 | 2013 |
| A 2um diameter, 9hz dark count, single photon avalanche diode in 130nm cmos technology JA Richardson, LA Grant, EAG Webster, RK Henderson 2010 Proceedings of the European Solid State Device Research Conference, 257-260, 2010 | 18 | 2010 |
