Folgen
Mark Law
Titel
Zitiert von
Zitiert von
Jahr
Ionizing radiation damage effects on GaN devices
SJ Pearton, F Ren, E Patrick, ME Law, AY Polyakov
ECS Journal of solid state science and technology 5 (2), Q35, 2015
3602015
Ion beams in silicon processing and characterization
E Chason, ST Picraux, JM Poate, JO Borland, MI Current, ...
Journal of applied physics 81 (10), 6513-6561, 1997
3471997
Self-consistent model of minority-carrier lifetime, diffusion length, and mobility
ME Law, E Solley, M Liang, DE Burk
IEEE Electron device letters 12 (8), 401-403, 1991
1471991
Continuum based modeling of silicon integrated circuit processing: An object oriented approach
ME Law, SM Cea
Computational Materials Science 12 (4), 289-308, 1998
1361998
Accurate measurements of the intrinsic diffusivities of boron and phosphorus in silicon
YM Haddara, BT Folmer, ME Law, T Buyuklimanli
Applied Physics Letters 77 (13), 1976-1978, 2000
1182000
The effect of impurities on diffusion and activation of ion implanted boron in silicon
LS Robertson, R Brindos, KS Jones, ME Law, DF Downey, S Falk, J Liu
MRS Online Proceedings Library (OPL) 610, B5. 8, 2000
942000
A Quantitative Model for ELDRS andDegradation Effects in Irradiated Oxides Based on First Principles Calculations
NL Rowsey, ME Law, RD Schrimpf, DM Fleetwood, BR Tuttle, ...
IEEE Transactions on Nuclear Science 58 (6), 2937-2944, 2011
882011
Verification of analytic point defect models using SUPREM-IV (dopant diffusion)
ME Law, RW Dutton
IEEE transactions on computer-aided design of integrated circuits and …, 1988
881988
Effects of hydrostatic pressure on dopant diffusion in silicon
H Park, KS Jones, JA Slinkman, ME Law
Journal of applied physics 78 (6), 3664-3670, 1995
761995
SUPREM-IV user’s manual
ME Law, CS Rafferty, RW Dutton
Standford University, 1988
761988
Perspective on flipping circuits I
GJ Kim, EE Patrick, R Srivastava, ME Law
IEEE Transactions on Education 57 (3), 188-192, 2014
702014
ColdFlux superconducting EDA and TCAD tools project: Overview and progress
CJ Fourie, K Jackman, MM Botha, S Razmkhah, P Febvre, CL Ayala, Q Xu, ...
IEEE Transactions on Applied Superconductivity 29 (5), 1-7, 2019
692019
Reliability studies of AlGaN/GaN high electron mobility transistors
DJ Cheney, EA Douglas, L Liu, CF Lo, YY Xi, BP Gila, F Ren, D Horton, ...
Semiconductor Science and Technology 28 (7), 074019, 2013
692013
Point defect based modeling of low dose silicon implant damage and oxidation effects on phosphorus and boron diffusion in silicon
H Park, ME Law
Journal of applied physics 72 (8), 3431-3439, 1992
631992
Diffusion of ion implanted boron in preamorphized silicon
KS Jones, LH Zhang, V Krishnamoorthy, M Law, DS Simons, P Chi, ...
Applied physics letters 68 (19), 2672-2674, 1996
611996
Stressed multidirectional solid-phase epitaxial growth of Si
NG Rudawski, KS Jones, S Morarka, ME Law, RG Elliman
Journal of Applied Physics 105 (8), 2009
592009
Fluorine-enhanced boron diffusion in amorphous silicon
JM Jacques, LS Robertson, KS Jones, ME Law, M Rendon, J Bennett
Applied physics letters 82 (20), 3469-3471, 2003
542003
The effects of proton-defect interactions on radiation-induced interface-trap formation and annealing
DR Hughart, RD Schrimpf, DM Fleetwood, NL Rowsey, ME Law, BR Tuttle, ...
IEEE Transactions on Nuclear Science 59 (6), 3087-3092, 2012
532012
Simulation of oxide trapping noise in submicron n-channel MOSFETs
FC Hou, G Bosman, ME Law
IEEE Transactions on Electron Devices 50 (3), 846-852, 2003
522003
Diffusion of implanted nitrogen in silicon
L Shaik Adam, ME Law, KS Jones, O Dokumaci, CS Murthy, S Hegde
Journal of Applied Physics 87 (5), 2282-2284, 2000
522000
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20