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Mark Law
Mark Law
Bestätigte E-Mail-Adresse bei eng.ufl.edu
Titel
Zitiert von
Zitiert von
Jahr
Ion beams in silicon processing and characterization
E Chason, ST Picraux, JM Poate, JO Borland, MI Current, ...
Journal of applied physics 81 (10), 6513-6561, 1997
3531997
Ionizing radiation damage effects on GaN devices
SJ Pearton, F Ren, E Patrick, ME Law, AY Polyakov
ECS Journal of solid state science and technology 5 (2), Q35, 2015
3062015
Self-consistent model of minority-carrier lifetime, diffusion length, and mobility
ME Law, E Solley, M Liang, DE Burk
IEEE Electron device letters 12 (8), 401-403, 1991
1431991
Continuum based modeling of silicon integrated circuit processing: An object oriented approach
ME Law, SM Cea
Computational Materials Science 12 (4), 289-308, 1998
1351998
Accurate measurements of the intrinsic diffusivities of boron and phosphorus in silicon
YM Haddara, BT Folmer, ME Law, T Buyuklimanli
Applied Physics Letters 77 (13), 1976-1978, 2000
1162000
Verification of analytic point defect models using SUPREM-IV (dopant diffusion)
ME Law, RW Dutton
IEEE transactions on computer-aided design of integrated circuits and …, 1988
951988
The effect of impurities on diffusion and activation of ion implanted boron in silicon
LS Robertson, R Brindos, KS Jones, ME Law, DF Downey, S Falk, J Liu
MRS Online Proceedings Library (OPL) 610, B5. 8, 2000
942000
A Quantitative Model for ELDRS andDegradation Effects in Irradiated Oxides Based on First Principles Calculations
NL Rowsey, ME Law, RD Schrimpf, DM Fleetwood, BR Tuttle, ...
IEEE Transactions on Nuclear Science 58 (6), 2937-2944, 2011
802011
SUPREM-IV user’s manual
ME Law, CS Rafferty, RW Dutton
Standford University, 1988
761988
Effects of hydrostatic pressure on dopant diffusion in silicon
H Park, KS Jones, JA Slinkman, ME Law
Journal of applied physics 78 (6), 3664-3670, 1995
731995
Perspective on flipping circuits I
GJ Kim, EE Patrick, R Srivastava, ME Law
IEEE Transactions on Education 57 (3), 188-192, 2014
662014
Point defect based modeling of low dose silicon implant damage and oxidation effects on phosphorus and boron diffusion in silicon
H Park, ME Law
Journal of applied physics 72 (8), 3431-3439, 1992
641992
Diffusion of ion implanted boron in preamorphized silicon
KS Jones, LH Zhang, V Krishnamoorthy, M Law, DS Simons, P Chi, ...
Applied physics letters 68 (19), 2672-2674, 1996
631996
ColdFlux superconducting EDA and TCAD tools project: Overview and progress
CJ Fourie, K Jackman, MM Botha, S Razmkhah, P Febvre, CL Ayala, Q Xu, ...
IEEE Transactions on Applied Superconductivity 29 (5), 1-7, 2019
622019
Reliability studies of AlGaN/GaN high electron mobility transistors
DJ Cheney, EA Douglas, L Liu, CF Lo, YY Xi, BP Gila, F Ren, D Horton, ...
Semiconductor Science and Technology 28 (7), 074019, 2013
592013
Stressed multidirectional solid-phase epitaxial growth of Si
NG Rudawski, KS Jones, S Morarka, ME Law, RG Elliman
Journal of Applied Physics 105 (8), 2009
582009
Fluorine-enhanced boron diffusion in amorphous silicon
JM Jacques, LS Robertson, KS Jones, ME Law, M Rendon, J Bennett
Applied physics letters 82 (20), 3469-3471, 2003
542003
Simulation of oxide trapping noise in submicron n-channel MOSFETs
FC Hou, G Bosman, ME Law
IEEE Transactions on Electron Devices 50 (3), 846-852, 2003
522003
The effects of proton-defect interactions on radiation-induced interface-trap formation and annealing
DR Hughart, RD Schrimpf, DM Fleetwood, NL Rowsey, ME Law, BR Tuttle, ...
IEEE Transactions on Nuclear Science 59 (6), 3087-3092, 2012
492012
Diffusion of implanted nitrogen in silicon
L Shaik Adam, ME Law, KS Jones, O Dokumaci, CS Murthy, S Hegde
Journal of Applied Physics 87 (5), 2282-2284, 2000
492000
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