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David Forbes
David Forbes
Bestätigte E-Mail-Adresse bei rit.edu
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Zitiert von
Zitiert von
Jahr
Near 1 V open circuit voltage InAs/GaAs quantum dot solar cells
CG Bailey, DV Forbes, RP Raffaelle, SM Hubbard
Applied Physics Letters 98 (16), 2011
2792011
Open-circuit voltage improvement of InAs/GaAs quantum-dot solar cells using reduced InAs coverage
CG Bailey, DV Forbes, SJ Polly, ZS Bittner, Y Dai, C Mackos, RP Raffaelle, ...
IEEE Journal of Photovoltaics 2 (3), 269-275, 2012
1922012
Nanostructured photovoltaics for space power
S Hubbard, C Bailey, S Polly, CD Cress, J Andersen, DV Forbes, ...
Journal of Nanophotonics 3 (1), 031880, 2009
862009
Evaluation of strain balancing layer thickness for InAs/GaAs quantum dot arrays using high resolution x-ray diffraction and photoluminescence
CG Bailey, SM Hubbard, DV Forbes, RP Raffaelle
Applied Physics Letters 95 (20), 2009
682009
Effect of vicinal substrates on the growth and device performance of quantum dot solar cells
SM Hubbard, A Podell, C Mackos, S Polly, CG Bailey, DV Forbes
Solar Energy Materials and Solar Cells 108, 256-262, 2013
522013
Fabrication and analysis of multijunction solar cells with a quantum dot (In) GaAs junction
C Kerestes, S Polly, D Forbes, C Bailey, A Podell, J Spann, P Patel, ...
Progress in Photovoltaics: Research and Applications 22 (11), 1172-1179, 2014
452014
Short circuit current enhancement of GaAs solar cells using strain compensated InAs quantum dots
SM Hubbard, CG Bailey, CD Cress, S Polly, J Clark, DV Forbes, ...
2008 33rd IEEE Photovoltaic Specialists Conference, 1-6, 2008
442008
Strained-layer InGaAs-GaAs-AlGaAs buried-heterostructure quantum-well lasers by three-step selective-area metalorganic chemical vapor deposition
TM Cockerill, DV Forbes, JA Dantzig, JJ Coleman
IEEE journal of quantum electronics 30 (2), 441-445, 1994
441994
Characterization of quantum dot enhanced solar cells for concentrator photovoltaics
SM Hubbard, CG Bailey, R Aguinaldo, S Polly, DV Forbes, RP Raffaelle
2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 000090-000095, 2009
412009
Metallization to asymmetric cladding separate confinement heterostructure lasers
GM Smith, DV Forbes, RM Lammert, JJ Coleman
Applied physics letters 67 (26), 3847-3849, 1995
381995
Effect of occupation of the excited states and phonon broadening on the determination of the hot carrier temperature from continuous wave photoluminescence in InGaAsP quantum …
H Esmaielpour, VR Whiteside, LC Hirst, JG Tischler, CT Ellis, MP Lumb, ...
Progress in Photovoltaics: Research and Applications 25 (9), 782-790, 2017
352017
InGaAs-AlGaAs-GaAs strained-layer quantum-well heterostructure square ring lasers
H Han, DV Forbes, JJ Coleman
IEEE journal of quantum electronics 31 (11), 1994-1997, 1995
351995
Measurement of IP3 in pin photodetectors and proposed performance requirements for RF fiber-optic links
DC Scott, TA Vang, J Elliott, D Forbes, J Lacey, K Everett, F Alvarez, ...
IEEE Photonics Technology Letters 12 (4), 422-424, 2000
342000
Delta-doping effects on quantum-dot solar cells
SJ Polly, DV Forbes, K Driscoll, S Hellström, SM Hubbard
IEEE Journal of Photovoltaics 4 (4), 1079-1085, 2014
332014
Effect of quantum dot position and background doping on the performance of quantum dot enhanced GaAs solar cells
K Driscoll, MF Bennett, SJ Polly, DV Forbes, SM Hubbard
Applied Physics Letters 104 (2), 2014
332014
InxGa1-xAs-AlyGa1-yAs-GaAs strained-layer quantum-well heterostructure circular ring lasers
H Han, ME Favaro, DV Forbes, JJ Coleman
IEEE photonics technology letters 4 (8), 817-819, 1992
331992
InAs nanowires grown by metal–organic vapor-phase epitaxy (MOVPE) employing PS/PMMA diblock copolymer nanopatterning
Y Huang, TW Kim, S Xiong, LJ Mawst, TF Kuech, PF Nealey, Y Dai, ...
Nano letters 13 (12), 5979-5984, 2013
322013
Twelve-channel strained-layer InGaAs-GaAs-AlGaAs buried heterostructure quantum well laser array for WDM applications by selective-area MOCVD
TM Cockerill, RM Lammert, DV Forbes, ML Osowski, JJ Coleman
IEEE photonics technology letters 6 (7), 786-788, 1994
321994
Largest genome-wide association study for PTSD identifies genetic risk loci in European and African ancestries and implicates novel biological pathways
CM Nievergelt, AX Maihofer, T Klengel, EG Atkinson, CY Chen, KW Choi, ...
bioRxiv, 458562, 2018
282018
Damage and lattice strain in ion‐irradiated AlAs
P Partyka, RS Averback, DV Forbes, JJ Coleman, P Ehrhart, W Jäger
Applied physics letters 65 (4), 421-423, 1994
281994
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