Michael Manfra
Michael Manfra
Bestätigte E-Mail-Adresse bei purdue.edu - Startseite
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Zitiert von
Zitiert von
Jahr
Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes
JWP Hsu, MJ Manfra, DV Lang, S Richter, SNG Chu, AM Sergent, ...
Applied Physics Letters 78 (12), 1685-1687, 2001
3302001
Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates
JWP Hsu, MJ Manfra, RJ Molnar, B Heying, JS Speck
Applied Physics Letters 81 (1), 79-81, 2002
2962002
Scaling of Majorana zero-bias conductance peaks
F Nichele, ACC Drachmann, AM Whiticar, ECT O’Farrell, HJ Suominen, ...
Physical Review Letters 119 (13), 136803, 2017
2832017
Poole-Frenkel electron emission from the traps in AlGaN/GaN transistors
O Mitrofanov, M Manfra
Journal of Applied Physics 95 (11), 6414-6419, 2004
2132004
Noise suppression using symmetric exchange gates in spin qubits
F Martins, FK Malinowski, PD Nissen, E Barnes, S Fallahi, GC Gardner, ...
Physical Review Letters 116 (11), 116801, 2016
1762016
High-fidelity entangling gate for double-quantum-dot spin qubits
JM Nichol, LA Orona, H SP, F S, G GC, M MJ, Y A
NPJ Quantum Information 3, DOI: 10.1038/s41534-016-0003-1, 2017
1572017
Cryogenic control architecture for large-scale quantum computing
JM Hornibrook, JI Colless, IDC Lamb, SJ Pauka, H Lu, AC Gossard, ...
Physical Review Applied 3 (2), 024010, 2015
1572015
Evidence of topological superconductivity in planar Josephson junctions
A Fornieri, AM Whiticar, F Setiawan, E Portolés, ACC Drachmann, ...
Nature 569, 89-92, 2019
1462019
Mechanisms of gate lag in GaN/AlGaN/GaN high electron mobility transistors
O Mitrofanov, M Manfra
Superlattices and Microstructures 34 (1-2), 33-53, 2003
1452003
Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy
JWP Hsu, MJ Manfra, SNG Chu, CH Chen, LN Pfeiffer, RJ Molnar
Applied Physics Letters 78 (25), 3980-3982, 2001
1422001
Collective non-perturbative coupling of 2D electrons with high-quality-factor terahertz cavity photons
Q Zhang, M Lou, X Li, JL Reno, W Pan, JD Watson, MJ Manfra, J Kono
Nature Physics 12 (11), 1005-1011, 2016
1402016
Nonconventional odd-denominator fractional quantum hall states in the second landau level
A Kumar, GA Csáthy, MJ Manfra, LN Pfeiffer, KW West
Physical Review Letters 105 (24), 246808, 2010
1392010
Gallium nitride is biocompatible and non-toxic before and after functionalization with peptides
SA Jewett, MS Makowski, B Andrews, A Ivanisevic, MJ Manfra
Acta Biomaterialia, 2011
1312011
Molecular beam epitaxy of ultra-high-quality AlGaAs/GaAs heterostructures: enabling physics in low-dimensional electronic systems
MJ Manfra
Annu. Rev. Condens. Matter Phys. 5 (1), 347-373, 2014
1252014
High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy
MJ Manfra, LN Pfeiffer, KW West, HL Stormer, KW Baldwin, JWP Hsu, ...
Applied Physics Letters 77 (18), 2888-2890, 2000
1202000
Superradiant decay of cyclotron resonance of two-dimensional electron gases
Q Zhang, T Arikawa, E Kato, JL Reno, W Pan, JD Watson, MJ Manfra, ...
Physical Review Letters 113 (4), 047601, 2014
1042014
20–80nm Channel length InGaAs gate-all-around nanowire MOSFETs with EOT= 1.2 nm and lowest SS= 63mV/dec
JJ Gu, XW Wang, H Wu, J Shao, AT Neal, MJ Manfra, RG Gordon, PD Ye
2012 International Electron Devices Meeting, 27.6. 1-27.6. 4, 2012
1042012
Edge transport in the trivial phase of InAs/GaSb
F Nichele, HJ Suominen, M Kjaergaard, CM Marcus, E Sajadi, JA Folk, ...
New Journal of Physics 18 (8), 083005, 2016
1002016
High mobility AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy
MJ Manfra, NG Weimann, JWP Hsu, LN Pfeiffer, KW West, S Syed, ...
Journal of Applied Physics 92 (1), 338-345, 2002
892002
Temperature dependence of the spin polarization of a quantum Hall ferromagnet
MJ Manfra, EH Aifer, BB Goldberg, DA Broido, L Pfeiffer, K West
Physical Review B 54 (24), 17327-17330, 1996
891996
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