Hyung Koun Cho
Hyung Koun Cho
Professor, Sungkyunkwan University, School of Advanced Materials Science & Engineering
Bestätigte E-Mail-Adresse bei - Startseite
Zitiert von
Zitiert von
A comparative analysis of deep level emission in ZnO layers deposited by various methods
CH Ahn, YY Kim, DC Kim, SK Mohanta, HK Cho
Journal of Applied Physics 105 (1), 2009
Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density
HK Cho, JY Lee, GM Yang, CS Kim
Applied Physics Letters 79 (2), 215-217, 2001
Electron capture behaviors of deep level traps in unintentionally doped and intentionally doped n-type GaN
HK Cho, CS Kim, CH Hong
Journal of applied physics 94 (3), 1485-1489, 2003
Oxide and nitride semiconductors: Processing, properties, and applications
T Yao, SK Hong
Springer Science & Business Media, 2009
Effect of annealing temperature on the electrical performances of solution-processed InGaZnO thin film transistors
S Hwang, JH Lee, CH Woo, JY Lee, HK Cho
Thin Solid Films 519 (15), 5146-5149, 2011
P-channel oxide thin film transistors using solution-processed copper oxide
SY Kim, CH Ahn, JH Lee, YH Kwon, S Hwang, JY Lee, HK Cho
ACS applied materials & interfaces 5 (7), 2417-2421, 2013
Highly selective spectral response with enhanced responsivity of n-ZnO/p-Si radial heterojunction nanowire photodiodes
HD Um, SA Moiz, KT Park, JY Jung, SW Jee, CH Ahn, DC Kim, HK Cho, ...
Applied Physics Letters 98 (3), 2011
Enhanced light output from aligned micropit InGaN-based light emitting diodes using wet-etch sapphire patterning
TV Cuong, HS Cheong, HG Kim, HY Kim, CH Hong, EK Suh, HK Cho, ...
Applied Physics Letters 90 (13), 2007
Fabrication of the hybrid ZnO LED structure grown on p-type GaN by metal organic chemical vapor deposition
DC Kim, WS Han, BH Kong, HK Cho, CH Hong
Physica B: Condensed Matter 401, 386-390, 2007
Two-step growth of high quality GaN using V/III ratio variation in the initial growth stage
S Kim, J Oh, J Kang, D Kim, J Won, JW Kim, HK Cho
Journal of crystal growth 262 (1-4), 7-13, 2004
Heteroepitaxy of AlGaN on bulk AlN substrates for deep ultraviolet light emitting diodes
Z Ren, Q Sun, SY Kwon, J Han, K Davitt, YK Song, AV Nurmikko, HK Cho, ...
Applied Physics Letters 91 (5), 2007
Investigation of Mg doping in high-Al content p-type AlxGa1− xN (0.3< x< 0.5)
SR Jeon, Z Ren, G Cui, J Su, M Gherasimova, J Han, HK Cho, L Zhou
Applied Physics Letters 86 (8), 2005
A study on the origin of emission of the annealed n-ZnO/p-GaN heterostructure LED
JY Lee, JH Lee, HS Kim, CH Lee, HS Ahn, HK Cho, YY Kim, BH Kong, ...
Thin Solid Films 517 (17), 5157-5160, 2009
Nitrogen-polar GaN growth evolution on c-plane sapphire
Q Sun, YS Cho, IH Lee, J Han, BH Kong, HK Cho
Applied Physics Letters 93 (13), 2008
Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors
CH Ahn, K Senthil, HK Cho, SY Lee
Scientific reports 3 (1), 2737, 2013
Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells
HK Cho, JY Lee, N Sharma, CJ Humphreys, GM Yang, CS Kim, JH Song, ...
Applied Physics Letters 79 (16), 2594-2596, 2001
Morphological and microstructural evolution in the two-step growth of nonpolar a-plane GaN on r-plane sapphire
Q Sun, BH Kong, CD Yerino, TS Ko, B Leung, HK Cho, J Han
Journal of Applied Physics 106 (12), 2009
Drastic improvement of oxide thermoelectric performance using thermal and plasma treatments of the InGaZnO thin films grown by sputtering
DK Seo, S Shin, HH Cho, BH Kong, DM Whang, HK Cho
Acta Materialia 59 (17), 6743-6750, 2011
Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition
HK Cho, JY Lee, CS Kim, GM Yang, N Sharma, C Humphreys
Journal of crystal growth 231 (4), 466-473, 2001
ZnO decorated flexible and strong graphene fibers for sensing NO2 and H2S at room temperature
AD Ugale, GG Umarji, SH Jung, NG Deshpande, W Lee, HK Cho, JB Yoo
Sensors and Actuators B: Chemical 308, 127690, 2020
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20