stefania privitera
stefania privitera
catania
Bestätigte E-Mail-Adresse bei cnr.it
TitelZitiert vonJahr
Amorphous-to-crystal transition of nitrogen- and oxygen-doped films studied by in situ resistance measurements
S Privitera, E Rimini, R Zonca
Applied physics letters 85 (15), 3044-3046, 2004
1862004
Crystallization and phase separation in thin films
S Privitera, E Rimini, C Bongiorno, R Zonca, A Pirovano, R Bez
Journal of applied physics 94 (7), 4409-4413, 2003
782003
Crystal nucleation and growth processes in
S Privitera, C Bongiorno, E Rimini, R Zonca
Applied physics letters 84 (22), 4448-4450, 2004
772004
Microscopy study of the conductive filament in HfO2 resistive switching memory devices
S Privitera, G Bersuker, B Butcher, A Kalantarian, S Lombardo, ...
Microelectronic Engineering 109, 75-78, 2013
652013
Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials
V Bragaglia, F Arciprete, W Zhang, AM Mio, E Zallo, K Perumal, ...
Scientific Reports 6, 23843, 2016
642016
Conductive filament structure in HfO2 resistive switching memory devices
S Privitera, G Bersuker, S Lombardo, C Bongiorno, DC Gilmer
Solid-State Electronics 111, 161-165, 2015
342015
Chemical and structural arrangement of the trigonal phase in GeSbTe thin films
AM Mio, SMS Privitera, V Bragaglia, F Arciprete, C Bongiorno, R Calarco, ...
Nanotechnology 28 (6), 065706, 2017
302017
Correlation of dot size distribution with luminescence and electrical transport of Si quantum dots embedded in SiO2
S Lombardo, S Coffa, C Bongiorno, C Spinella, E Castagna, A Sciuto, ...
Materials Science and Engineering: B 69, 295-298, 2000
292000
Silicon carbide detectors study for NUMEN project
A Muoio, C Agodi, DL Bonanno, DG Bongiovanni, S Calabrese, ...
EPJ Web of Conferences 117, 10006, 2016
282016
Effects of dopants on the amorphous-to-fcc transition in Ge2Sb2Te5 thin films
S Privitera, E Rimini, C Bongiorno, A Pirovano, R Bez
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2007
262007
Effect of the linewidth reduction on the characteristic time spread in C49–C54 phase transition
S Privitera, F La Via, MG Grimaldi, E Rimini
Applied physics letters 73 (26), 3863-3865, 1998
241998
Electrical and structural characterization of metal–oxide–semiconductor capacitors with silicon rich oxide
I Crupi, S Lombardo, C Spinella, C Bongiorno, Y Liao, C Gerardi, B Fazio, ...
Journal of Applied Physics 89 (10), 5552-5558, 2001
232001
Ageing mechanisms of highly active and stable nickel-coated silicon photoanodes for water splitting
T Han, Y Shi, X Song, A Mio, L Valenti, F Hui, S Privitera, S Lombardo, ...
Journal of Materials Chemistry A 4 (21), 8053-8060, 2016
222016
Amorphous-fcc transition in Ge2Sb2Te5
S Lombardo, E Rimini, MG Grimaldi, S Privitera
Microelectronic Engineering 87 (3), 294-300, 2010
192010
Simulation of Switching Behavior in a Ferroelectic Liquid Crytal
S Privitera, S Lombardo, C Bongiorno, E Rimini, A Pirovano
J. Appl. Phys 102, 013516, 2007
192007
Nucleation and growth of C54 grains into C49 thin films monitored by micro-Raman imaging
S Privitera, F La Via, C Spinella, S Quilici, A Borghesi, F Meinardi, ...
Journal of Applied Physics 88 (12), 7013-7019, 2000
182000
Nucleation and growth of C54 grains into C49 thin films monitored by micro-Raman imaging
S Privitera, F La Via, C Spinella, S Quilici, A Borghesi, F Meinardi, ...
Journal of Applied Physics 88 (12), 7013-7019, 2000
182000
Phase change mechanisms in
S Privitera, S Lombardo, C Bongiorno, E Rimini, A Pirovano
Journal of applied physics 102 (1), 013516, 2007
172007
Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys
E Zallo, S Cecchi, JE Boschker, AM Mio, F Arciprete, S Privitera, ...
Scientific reports 7 (1), 1-7, 2017
152017
Interface state density evaluation of high quality hetero-epitaxial 3C–SiC (0 0 1) for high-power MOSFET applications
R Anzalone, S Privitera, M Camarda, A Alberti, G Mannino, P Fiorenza, ...
Materials Science and Engineering: B 198, 14-19, 2015
152015
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20