Hartwin Peelaers
Titel
Zitiert von
Zitiert von
Jahr
First-principles investigation of graphene fluoride and graphane
O Leenaerts, H Peelaers, AD Hernández-Nieves, B Partoens, FM Peeters
Physical Review B 82 (19), 195436, 2010
3962010
Effects of strain on band structure and effective masses in MoS 2
H Peelaers, CG Van de Walle
Physical Review B 86 (24), 241401, 2012
3862012
High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes
WS Hwang, A Verma, H Peelaers, V Protasenko, S Rouvimov, H Xing, ...
Applied Physics Letters 104 (20), 203111, 2014
2492014
Hydrogenated cation vacancies in semiconducting oxides
JB Varley, H Peelaers, A Janotti, CG Van de Walle
Journal of Physics: Condensed Matter 23 (33), 334212, 2011
1952011
Brillouin zone and band structure of β‐Ga2O3
H Peelaers, CG Van de Walle
physica status solidi (b) 252 (4), 828-832, 2015
1642015
Formation and segregation energies of B and P doped and BP codoped silicon nanowires
H Peelaers, B Partoens, FM Peeters
Nano letters 6 (12), 2781-2784, 2006
1182006
Nature and evolution of the band-edge states in MoS 2: From monolayer to bulk
JE Padilha, H Peelaers, A Janotti, CG Van de Walle
Physical Review B 90 (20), 205420, 2014
1172014
Exciton-dominated Dielectric Function of Atomically Thin MoS2 Films
Y Yu, Y Yu, Y Cai, W Li, A Gurarslan, H Peelaers, DE Aspnes, ...
Scientific reports 5, 16996, 2015
1042015
Fundamental limits on optical transparency of transparent conducting oxides: Free-carrier absorption in SnO2
H Peelaers, E Kioupakis, CG Van de Walle
Applied Physics Letters 100 (1), 011914, 2012
912012
Fundamental limits on the electron mobility of β-Ga2O3
Y Kang, K Krishnaswamy, H Peelaers, CG Van de Walle
Journal of Physics: Condensed Matter 29 (23), 234001, 2017
842017
Vibrational properties of graphene fluoride and graphane
H Peelaers, AD Hernandez-Nieves, O Leenaerts, B Partoens, FM Peeters
Applied Physics Letters 98 (5), 051914, 2011
732011
Structural and electronic properties of Ga2O3-Al2O3 alloys
H Peelaers, JB Varley, JS Speck, CG Van de Walle
Applied Physics Letters 112 (24), 242101, 2018
712018
(In x Ga 1− x) 2 O 3 alloys for transparent electronics
H Peelaers, D Steiauf, JB Varley, A Janotti, CG Van de Walle
Physical Review B 92 (8), 085206, 2015
582015
Phonon band structure of Si nanowires: a stability analysis
H Peelaers, B Partoens, FM Peeters
Nano letters 9 (1), 107-111, 2009
582009
First-principles study of van der Waals interactions in MoS2 and MoO3
H Peelaers, CG Van de Walle
Journal of Physics: Condensed Matter 26 (30), 305502, 2014
532014
Elastic Constants and Pressure-Induced Effects in MoS2
H Peelaers, CG Van de Walle
The Journal of Physical Chemistry C 118 (22), 12073-12076, 2014
482014
First-principles study of the mobility of SrTiO 3
B Himmetoglu, A Janotti, H Peelaers, A Alkauskas, CG Van de Walle
Physical Review B 90 (24), 241204, 2014
472014
Properties of B and P doped Ge nanowires
H Peelaers, B Partoens, FM Peeters
Applied physics letters 90 (26), 263103, 2007
472007
Doping of with transition metals
H Peelaers, CG Van de Walle
Physical Review B 94 (19), 195203, 2016
412016
Deep acceptors and their diffusion in Ga2O3
H Peelaers, JL Lyons, JB Varley, CG Van de Walle
APL Materials 7 (2), 022519, 2019
332019
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