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Łukasz Janicki
Łukasz Janicki
Faculty of Fundamental Problems of Technology, Wroclaw University of Technology
Bestätigte E-Mail-Adresse bei pwr.edu.pl
Titel
Zitiert von
Zitiert von
Jahr
Beyond quantum efficiency limitations originating from the piezoelectric polarization in light-emitting devices
G Muziol, H Turski, M Siekacz, K Szkudlarek, L Janicki, M Baranowski, ...
Acs Photonics 6 (8), 1963-1971, 2019
372019
Contactless electroreflectance studies of Fermi level position on c-plane GaN surface grown by molecular beam epitaxy and metalorganic vapor phase epitaxy
R Kudrawiec, M Gladysiewicz, L Janicki, J Misiewicz, G Cywinski, ...
Applied Physics Letters 100 (18), 2012
322012
Contactless electroreflectance studies of the Fermi level position at the air/GaN interface: Bistable nature of the Ga-polar surface
Ł Janicki, M Gładysiewicz, J Misiewicz, K Klosek, M Sobanska, ...
Applied Surface Science 396, 1657-1666, 2017
312017
Fermi level and bands offsets determination in insulating (Ga, Mn) N/GaN structures
L Janicki, G Kunert, M Sawicki, E Piskorska-Hommel, K Gas, R Jakiela, ...
Scientific Reports 7 (1), 41877, 2017
282017
Growth of GaN epilayers on c-, m-, a-, and (20.1)-plane GaN bulk substrates obtained by ammonothermal method
M Rudziński, R Kudrawiec, L Janicki, J Serafinczuk, R Kucharski, M Zając, ...
Journal of crystal growth 328 (1), 5-12, 2011
262011
Contactless electroreflectance studies of surface potential barrier for N-and Ga-face epilayers grown by molecular beam epitaxy
R Kudrawiec, L Janicki, M Gladysiewicz, J Misiewicz, G Cywinski, ...
Applied Physics Letters 103 (5), 2013
212013
Transparency of semi-insulating, n-type, and p-type ammonothermal GaN substrates in the near-infrared, mid-infrared, and THz spectral range
R Kucharski, Ł Janicki, M Zajac, M Welna, M Motyka, C Skierbiszewski, ...
Crystals 7 (7), 187, 2017
182017
Zn acceptor position in GaN: Zn probed by contactless electroreflectance spectroscopy
Ł Janicki, MS Mohajerani, J Hartmann, E Zdanowicz, HH Wehmann, ...
Applied Physics Letters 113 (3), 2018
132018
Engineering of electric field distribution in GaN (cap)/AlGaN/GaN heterostructures: theoretical and experimental studies
M Gladysiewicz, L Janicki, J Misiewicz, M Sobanska, K Klosek, ...
Journal of Physics D: Applied Physics 49 (34), 345106, 2016
132016
Determination of Fermi level position at the graphene/GaN Interface using electromodulation spectroscopy
AP Herman, L Janicki, HS Stokowski, M Rudzinski, E Rozbiegala, ...
Advanced Materials Interfaces 7 (21), 2001220, 2020
122020
Growth of AlGaN/GaN heterostructure with lattice-matched AlIn (Ga) N back barrier
JG Kim, SH Kang, Ł Janicki, JH Lee, JM Ju, KW Kim, YS Lee, SH Lee, ...
Solid-State Electronics 152, 24-28, 2019
122019
Theoretical and experimental studies of electric field distribution in N-polar GaN/AlGaN/GaN heterostructures
M Gladysiewicz, L Janicki, M Siekacz, G Cywinski, C Skierbiszewski, ...
Applied Physics Letters 107 (26), 2015
122015
Surface properties of c-plane GaN grown by plasma-assisted molecular beam epitaxy
G Cywiński, R Kudrawiec, Ł Janicki, J Misiewicz, C Chèze, M Siekacz, ...
Journal of Vacuum Science & Technology B 31 (3), 2013
122013
Sensitivity of N-polar GaN surface barrier to ambient gases
Ł Janicki, J Misiewicz, M Siekacz, H Turski, J Moneta, S Gorantla, ...
Sensors and Actuators B: Chemical 281, 561-567, 2019
112019
Determination of the band gap of indium-rich InGaN by means of photoacoustic spectroscopy
R Oliva, SJ Zelewski, Ł Janicki, KR Gwóźdź, J Serafińczuk, M Rudziński, ...
Semiconductor Science and Technology 33 (3), 035007, 2018
112018
Contactless electroreflectance of AlGaN/GaN heterostructures deposited on c-, a-, m-, and (20.1)-plane GaN bulk substrates grown by ammonothermal method
R Kudrawiec, M Rudziński, M Gladysiewicz, L Janicki, PR Hageman, ...
Journal of Applied Physics 109 (6), 2011
112011
Sensitivity of Fermi level position at Ga-polar, N-polar, and nonpolar m-plane GaN surfaces to vacuum and air ambient
Ł Janicki, M Ramírez-López, J Misiewicz, G Cywiński, M Boćkowski, ...
Japanese Journal of Applied Physics 55 (5S), 05FA08, 2016
92016
Thermal oxidation of [0001] GaN in water vapor compared with dry and wet oxidation: Oxide properties and impact on GaN
Ł Janicki, R Korbutowicz, M Rudziński, PP Michałowski, S Złotnik, ...
Applied Surface Science 598, 153872, 2022
62022
Electric fields and surface fermi level in undoped GaN/AlN two‐dimensional hole gas heterostructures
Ł Janicki, R Chaudhuri, SJ Bader, HG Xing, D Jena, R Kudrawiec
physica status solidi (RRL)–Rapid Research Letters 15 (4), 2000573, 2021
62021
Mask-free three-dimensional epitaxial growth of III-nitrides
M Rudziński, S Zlotnik, M Wójcik, J Gaca, Ł Janicki, R Kudrawiec
Journal of Materials Science 56, 558-569, 2021
52021
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