CMOS-compatible spintronic devices: a review A Makarov, T Windbacher, V Sverdlov, S Selberherr
Semiconductor Science and Technology 31 (11), 113006, 2016
129 2016 Emerging memory technologies: Trends, challenges, and modeling methods A Makarov, V Sverdlov, S Selberherr
Microelectronics Reliability 52 (4), 628-634, 2012
120 2012 Modeling of emerging resistive switching based memory cells A Makarov
Technische Universität Wien, 2014
44 2014 Reduction of switching time in pentalayer magnetic tunnel junctions with a composite‐free layer A Makarov, V Sverdlov, D Osintsev, S Selberherr
physica status solidi (RRL)–Rapid Research Letters 5 (12), 420-422, 2011
37 2011 Recent developments in the synthesis of 1, 2, 5-thiadiazoles and 2, 1, 3-benzothiadiazoles OA Rakitin
Synthesis 51 (23), 4338-4347, 2019
32 2019 Hot-carrier degradation in FinFETs: Modeling, peculiarities, and impact of device topology A Makarov, SE Tyaginov, B Kaczer, M Jech, A Chasin, A Grill, G Hellings, ...
2017 IEEE International Electron Devices Meeting (IEDM), 13.1. 1-13.1. 4, 2017
32 2017 Two-pulse sub-ns switching scheme for advanced spin-orbit torque MRAM V Sverdlov, A Makarov, S Selberherr
Solid-State Electronics 155, 49-56, 2019
28 2019 Fast switching in magnetic tunnel junctions with two pinned layers: Micromagnetic modeling A Makarov, V Sverdlov, D Osintsev, S Selberherr
IEEE transactions on magnetics 48 (4), 1289-1292, 2012
22 2012 Stochastic model of the resistive switching mechanism in bipolar resistive random access memory: Monte Carlo simulations A Makarov, V Sverdlov, S Selberherr
Journal of Vacuum Science & Technology B 29 (1), 2011
21 2011 Temperature dependence of the transport properties of spin field-effect transistors built with InAs and Si channels D Osintsev, V Sverdlov, Z Stanojević, A Makarov, S Selberherr
Solid-State Electronics 71, 25-29, 2012
19 2012 Robust magnetic field-free switching of a perpendicularly magnetized free layer for SOT-MRAM RL de Orio, A Makarov, S Selberherr, W Goes, J Ender, S Fiorentini, ...
Solid-State Electronics 168, 107730, 2020
18 2020 Chemistry of Herz radicals: a new way to near-IR dyes with multiple long-lived and differently-coloured redox states AY Makarov, YM Volkova, LA Shundrin, AA Dmitriev, IG Irtegova, ...
Chemical Communications 56 (5), 727-730, 2020
18 2020 Full ( M Vandemaele, B Kaczer, S Tyaginov, Z Stanojević, A Makarov, A Chasin, ...
2019 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2019
18 2019 Herz radicals: chemistry and materials science YM Volkova, AY Makarov, EA Pritchina, NP Gritsan, AV Zibarev
Mendeleev Communications 30 (4), 385-394, 2020
17 2020 Fluorine‐Containing n‐6 and Angular and Linear n‐6‐n’(n, n’= 5, 6, 7) Diaza‐Heterocyclic Scaffolds Assembled on Benzene Core in Unified Way DO Prima, AG Makarov, IY Bagryanskaya, AE Kolesnikov, LV Zargarova, ...
ChemistrySelect 4 (8), 2383-2386, 2019
17 2019 Simulation comparison of hot-carrier degradation in nanowire, nanosheet and forksheet FETs M Vandemaele, B Kaczer, S Tyaginov, E Bury, A Chasin, J Franco, ...
2022 IEEE International Reliability Physics Symposium (IRPS), 6A. 2-1-6A. 2-9, 2022
16 2022 A compact physics analytical model for hot-carrier degradation S Tyaginov, A Grill, M Vandemaele, T Grasser, G Hellings, A Makarov, ...
2020 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2020
14 2020 Synthesis and Structure of Fluorinated (Benzo[d ]imidazol-2-yl)methanols: Bench Compounds for Diverse Applications V Romanov, E Tretyakov, G Selivanova, J Li, I Bagryanskaya, A Makarov, ...
Crystals 10 (9), 786, 2020
13 2020 Modelling of multipurpose spintronic devices T Windbacher, J Ghosh, A Makarov, V Sverdlov, S Selberherr
International Journal of Nanotechnology 12 (3-4), 313-331, 2015
13 2015 Novel bias-field-free spin transfer oscillator T Windbacher, A Makarov, H Mahmoudi, V Sverdlov, S Selberherr
Journal of Applied Physics 115 (17), 2014
13 2014 
Siegfried SelberherrInstitute for Microelectronics, TU WienBestätigte E-Mail-Adresse bei TUWien.ac.at
