| CMOS-compatible spintronic devices: a review A Makarov, T Windbacher, V Sverdlov, S Selberherr Semiconductor Science and Technology 31 (11), 113006, 2016 | 113 | 2016 |
| Emerging memory technologies: Trends, challenges, and modeling methods A Makarov, V Sverdlov, S Selberherr Microelectronics Reliability 52 (4), 628-634, 2012 | 113 | 2012 |
| Modeling of emerging resistive switching based memory cells A Makarov Institute for Microelectronics, TU Wien, Vienna, 2014 | 39 | 2014 |
| Reduction of switching time in pentalayer magnetic tunnel junctions with a composite‐free layer A Makarov, V Sverdlov, D Osintsev, S Selberherr physica status solidi (RRL)–Rapid Research Letters 5 (12), 420-422, 2011 | 33 | 2011 |
| Hot-carrier degradation in FinFETs: Modeling, peculiarities, and impact of device topology A Makarov, SE Tyaginov, B Kaczer, M Jech, A Chasin, A Grill, G Hellings, ... 2017 IEEE International Electron Devices Meeting (IEDM), 13.1. 1-13.1. 4, 2017 | 26 | 2017 |
| Two-pulse sub-ns switching scheme for advanced spin-orbit torque MRAM V Sverdlov, A Makarov, S Selberherr Solid-State Electronics 155, 49-56, 2019 | 25 | 2019 |
| Temperature dependence of the transport properties of spin field-effect transistors built with InAs and Si channels D Osintsev, V Sverdlov, Z Stanojević, A Makarov, S Selberherr Solid-State Electronics 71, 25-29, 2012 | 19 | 2012 |
| Fast switching in magnetic tunnel junctions with two pinned layers: Micromagnetic modeling A Makarov, V Sverdlov, D Osintsev, S Selberherr IEEE transactions on magnetics 48 (4), 1289-1292, 2012 | 19 | 2012 |
| Stochastic model of the resistive switching mechanism in bipolar resistive random access memory: Monte Carlo simulations A Makarov, V Sverdlov, S Selberherr Journal of Vacuum Science & Technology B 29 (1), 2011 | 19 | 2011 |
| Full () Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs M Vandemaele, B Kaczer, S Tyaginov, Z Stanojević, A Makarov, A Chasin, ... 2019 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2019 | 17 | 2019 |
| Robust magnetic field-free switching of a perpendicularly magnetized free layer for SOT-MRAM RL de Orio, A Makarov, S Selberherr, W Goes, J Ender, S Fiorentini, ... Solid-State Electronics 168, 107730, 2020 | 16 | 2020 |
| Fluorine‐Containing n‐6 and Angular and Linear n‐6‐n’(n, n’= 5, 6, 7) Diaza‐Heterocyclic Scaffolds Assembled on Benzene Core in Unified Way DO Prima, AG Makarov, IY Bagryanskaya, AE Kolesnikov, LV Zargarova, ... ChemistrySelect 4 (8), 2383-2386, 2019 | 15 | 2019 |
| Chemistry of Herz radicals: a new way to near-IR dyes with multiple long-lived and differently-coloured redox states AY Makarov, YM Volkova, LA Shundrin, AA Dmitriev, IG Irtegova, ... Chemical Communications 56 (5), 727-730, 2020 | 14 | 2020 |
| Herz radicals: chemistry and materials science YM Volkova, AY Makarov, EA Pritchina, NP Gritsan, AV Zibarev Mendeleev Communications 30 (4), 385-394, 2020 | 12 | 2020 |
| Modelling of multipurpose spintronic devices T Windbacher, J Ghosh, A Makarov, V Sverdlov, S Selberherr International Journal of Nanotechnology 12 (3-4), 313-331, 2015 | 12 | 2015 |
| Novel bias-field-free spin transfer oscillator T Windbacher, A Makarov, H Mahmoudi, V Sverdlov, S Selberherr Journal of Applied Physics 115 (17), 2014 | 12 | 2014 |
| Synthesis and Structure of Fluorinated (Benzo[d]imidazol-2-yl)methanols: Bench Compounds for Diverse Applications V Romanov, E Tretyakov, G Selivanova, J Li, I Bagryanskaya, A Makarov, ... Crystals 10 (9), 786, 2020 | 11 | 2020 |
| Modeling emerging non-volatile memories: Current trends and challenges A Makarov, V Sverdlov, S Selberherr Physics procedia 25, 99-104, 2012 | 11 | 2012 |
| A compact physics analytical model for hot-carrier degradation S Tyaginov, A Grill, M Vandemaele, T Grasser, G Hellings, A Makarov, ... 2020 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2020 | 10 | 2020 |
| Stochastic modeling of bipolar resistive switching in metal-oxide based memory by Monte Carlo technique A Makarov, V Sverdlov, S Selberherr Journal of computational electronics 9, 146-152, 2010 | 10 | 2010 |
Siegfried SelberherrInstitute for Microelectronics, TU WienVerified email at TUWien.ac.at
