Alexander Makarov
Alexander Makarov
Institute for Microelectronics, Technische Universitšt Wien
Verified email at iue.tuwien.ac.at - Homepage
Title
Cited by
Cited by
Year
Emerging memory technologies: Trends, challenges, and modeling methods
A Makarov, V Sverdlov, S Selberherr
Microelectronics Reliability 52 (4), 628-634, 2012
812012
CMOS-compatible spintronic devices: a review
A Makarov, T Windbacher, V Sverdlov, S Selberherr
Semiconductor Science and Technology 31 (11), 113006, 2016
482016
Reduction of switching time in pentalayer magnetic tunnel junctions with a composite‐free layer
A Makarov, V Sverdlov, D Osintsev, S Selberherr
physica status solidi (RRL)–Rapid Research Letters 5 (12), 420-422, 2011
322011
Temperature dependence of the transport properties of spin field-effect transistors built with InAs and Si channels
D Osintsev, V Sverdlov, Z Stanojević, A Makarov, S Selberherr
Solid-state electronics 71, 25-29, 2012
182012
Fast switching in magnetic tunnel junctions with two pinned layers: Micromagnetic modeling
A Makarov, V Sverdlov, D Osintsev, S Selberherr
IEEE transactions on magnetics 48 (4), 1289-1292, 2012
172012
Stochastic model of the resistive switching mechanism in bipolar resistive random access memory: Monte Carlo simulations
A Makarov, V Sverdlov, S Selberherr
Journal of Vacuum Science & Technology B, Nanotechnology and†…, 2011
172011
Hot-carrier degradation in FinFETs: Modeling, peculiarities, and impact of device topology
A Makarov, SE Tyaginov, B Kaczer, M Jech, A Chasin, A Grill, G Hellings, ...
2017 IEEE International Electron Devices Meeting (IEDM), 13.1. 1-13.1. 4, 2017
132017
Novel bias-field-free spin transfer oscillator
T Windbacher, A Makarov, H Mahmoudi, V Sverdlov, S Selberherr
Journal of Applied Physics 115 (17), 17C901, 2014
102014
Two-pulse sub-ns switching scheme for advanced spin-orbit torque MRAM
V Sverdlov, A Makarov, S Selberherr
Solid-State Electronics 155, 49-56, 2019
72019
Modelling of multipurpose spintronic devices
T Windbacher, J Ghosh, A Makarov, V Sverdlov, S Selberherr
International Journal of Nanotechnology 12 (3-4), 313-331, 2015
72015
Modeling emerging non-volatile memories: Current trends and challenges
A Makarov, V Sverdlov, S Selberherr
Physics procedia 25, 99-104, 2012
72012
Modeling the effect of random dopants on hot-carrier degradation in FinFETs
A Makarov, B Kaczer, P Roussel, A Chasin, A Grill, M Vandemaele, ...
2019 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2019
62019
Reliable sub-nanosecond switching of a perpendicular SOT-MRAM cell without external magnetic field
V Sverdlov, A Makarov, S Selberherr
Journal on Systemics, Cybernetics and Informatics 16, 55-59, 2018
62018
Influence of magnetization variations in the free layer on a non-volatile magnetic flip flop
T Windbacher, A Makarov, V Sverdlov, S Selberherr
Solid-State Electronics 108, 2-7, 2015
62015
Magnetic tunnel junctions with a composite free layer: a new concept for future universal memory
A Makarov, V Sverdlov, S Selberherr
Future Trends in Microelectronics, 93-101, 2013
62013
Fast switching in magnetic tunnel junctions with double barrier layer
A Makarov, V Sverdlov, D Osintsev, S Selberherr
Proc. SSDM, 456-457, 2011
62011
Novel buffered magnetic logic gate grid
T Windbacher, A Makarov, V Sverdlov, S Selberherr
ECS Transactions 66 (4), 295, 2015
52015
Switching time and current reduction using a composite free layer in magnetic tunnel junctions
A Makarov, V Sverdlov, D Osintsev, S Selberherr
2011 International Semiconductor Device Research Symposium (ISDRS), 1-2, 2011
52011
Properties of silicon ballistic spin fin-based field-effect transistors
D Osintsev, V Sverdlov, Z Stanojevic, A Makarov, J Weinbub, S Selberherr
ECS Transactions 35 (5), 277, 2011
52011
Stochastic modeling of the impact of random dopants on hot-carrier degradation in n-FinFETs
A Makarov, B Kaczer, P Roussel, A Chasin, A Grill, M Vandemaele, ...
IEEE Electron Device Letters 40 (6), 870-873, 2019
42019
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