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Alexander Makarov
Alexander Makarov
Institute for Microelectronics, Technische Universitšt Wien
Verified email at iue.tuwien.ac.at - Homepage
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Cited by
Cited by
Year
CMOS-compatible spintronic devices: a review
A Makarov, T Windbacher, V Sverdlov, S Selberherr
Semiconductor Science and Technology 31 (11), 113006, 2016
1132016
Emerging memory technologies: Trends, challenges, and modeling methods
A Makarov, V Sverdlov, S Selberherr
Microelectronics Reliability 52 (4), 628-634, 2012
1132012
Modeling of emerging resistive switching based memory cells
A Makarov
Institute for Microelectronics, TU Wien, Vienna, 2014
392014
Reduction of switching time in pentalayer magnetic tunnel junctions with a composite‐free layer
A Makarov, V Sverdlov, D Osintsev, S Selberherr
physica status solidi (RRL)–Rapid Research Letters 5 (12), 420-422, 2011
332011
Hot-carrier degradation in FinFETs: Modeling, peculiarities, and impact of device topology
A Makarov, SE Tyaginov, B Kaczer, M Jech, A Chasin, A Grill, G Hellings, ...
2017 IEEE International Electron Devices Meeting (IEDM), 13.1. 1-13.1. 4, 2017
262017
Two-pulse sub-ns switching scheme for advanced spin-orbit torque MRAM
V Sverdlov, A Makarov, S Selberherr
Solid-State Electronics 155, 49-56, 2019
252019
Temperature dependence of the transport properties of spin field-effect transistors built with InAs and Si channels
D Osintsev, V Sverdlov, Z Stanojević, A Makarov, S Selberherr
Solid-State Electronics 71, 25-29, 2012
192012
Fast switching in magnetic tunnel junctions with two pinned layers: Micromagnetic modeling
A Makarov, V Sverdlov, D Osintsev, S Selberherr
IEEE transactions on magnetics 48 (4), 1289-1292, 2012
192012
Stochastic model of the resistive switching mechanism in bipolar resistive random access memory: Monte Carlo simulations
A Makarov, V Sverdlov, S Selberherr
Journal of Vacuum Science & Technology B 29 (1), 2011
192011
Full () Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs
M Vandemaele, B Kaczer, S Tyaginov, Z Stanojević, A Makarov, A Chasin, ...
2019 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2019
172019
Robust magnetic field-free switching of a perpendicularly magnetized free layer for SOT-MRAM
RL de Orio, A Makarov, S Selberherr, W Goes, J Ender, S Fiorentini, ...
Solid-State Electronics 168, 107730, 2020
162020
Fluorine‐Containing n‐6 and Angular and Linear n‐6‐n’(n, n’= 5, 6, 7) Diaza‐Heterocyclic Scaffolds Assembled on Benzene Core in Unified Way
DO Prima, AG Makarov, IY Bagryanskaya, AE Kolesnikov, LV Zargarova, ...
ChemistrySelect 4 (8), 2383-2386, 2019
152019
Chemistry of Herz radicals: a new way to near-IR dyes with multiple long-lived and differently-coloured redox states
AY Makarov, YM Volkova, LA Shundrin, AA Dmitriev, IG Irtegova, ...
Chemical Communications 56 (5), 727-730, 2020
142020
Herz radicals: chemistry and materials science
YM Volkova, AY Makarov, EA Pritchina, NP Gritsan, AV Zibarev
Mendeleev Communications 30 (4), 385-394, 2020
122020
Modelling of multipurpose spintronic devices
T Windbacher, J Ghosh, A Makarov, V Sverdlov, S Selberherr
International Journal of Nanotechnology 12 (3-4), 313-331, 2015
122015
Novel bias-field-free spin transfer oscillator
T Windbacher, A Makarov, H Mahmoudi, V Sverdlov, S Selberherr
Journal of Applied Physics 115 (17), 2014
122014
Synthesis and Structure of Fluorinated (Benzo[d]imidazol-2-yl)methanols: Bench Compounds for Diverse Applications
V Romanov, E Tretyakov, G Selivanova, J Li, I Bagryanskaya, A Makarov, ...
Crystals 10 (9), 786, 2020
112020
Modeling emerging non-volatile memories: Current trends and challenges
A Makarov, V Sverdlov, S Selberherr
Physics procedia 25, 99-104, 2012
112012
A compact physics analytical model for hot-carrier degradation
S Tyaginov, A Grill, M Vandemaele, T Grasser, G Hellings, A Makarov, ...
2020 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2020
102020
Stochastic modeling of bipolar resistive switching in metal-oxide based memory by Monte Carlo technique
A Makarov, V Sverdlov, S Selberherr
Journal of computational electronics 9, 146-152, 2010
102010
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