Alexander Makarov
Alexander Makarov
Institute for Microelectronics, Technische Universitšt Wien
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Emerging memory technologies: Trends, challenges, and modeling methods
A Makarov, V Sverdlov, S Selberherr
Microelectronics Reliability 52 (4), 628-634, 2012
CMOS-compatible spintronic devices: a review
A Makarov, T Windbacher, V Sverdlov, S Selberherr
Semiconductor Science and Technology 31 (11), 113006, 2016
Reduction of switching time in pentalayer magnetic tunnel junctions with a composite‐free layer
A Makarov, V Sverdlov, D Osintsev, S Selberherr
physica status solidi (RRL)–Rapid Research Letters 5 (12), 420-422, 2011
Modeling of emerging resistive switching based memory cells
A Makarov
Institute for Microelectronics, TU Wien, Vienna, 2014
Hot-carrier degradation in FinFETs: Modeling, peculiarities, and impact of device topology
A Makarov, SE Tyaginov, B Kaczer, M Jech, A Chasin, A Grill, G Hellings, ...
2017 IEEE International Electron Devices Meeting (IEDM), 13.1. 1-13.1. 4, 2017
Two-pulse sub-ns switching scheme for advanced spin-orbit torque MRAM
V Sverdlov, A Makarov, S Selberherr
Solid-State Electronics 155, 49-56, 2019
IEEE Electron Dev
A Sharma, S Tyaginov, SE Rauch, J Franco, A Makarov, MI Vexler, ...
Lett 38 (2), 160, 2017
Fast switching in magnetic tunnel junctions with two pinned layers: Micromagnetic modeling
A Makarov, V Sverdlov, D Osintsev, S Selberherr
IEEE transactions on magnetics 48 (4), 1289-1292, 2012
Stochastic model of the resistive switching mechanism in bipolar resistive random access memory: Monte Carlo simulations
A Makarov, V Sverdlov, S Selberherr
Journal of Vacuum Science & Technology B, Nanotechnology and†…, 2011
Temperature dependence of the transport properties of spin field-effect transistors built with InAs and Si channels
D Osintsev, V Sverdlov, Z Stanojević, A Makarov, S Selberherr
Solid-State Electronics 71, 25-29, 2012
Full () Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs
M Vandemaele, B Kaczer, S Tyaginov, Z Stanojević, A Makarov, A Chasin, ...
2019 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2019
Robust magnetic field-free switching of a perpendicularly magnetized free layer for SOT-MRAM
RL de Orio, A Makarov, S Selberherr, W Goes, J Ender, S Fiorentini, ...
Solid-State Electronics 168, 107730, 2020
Modelling of multipurpose spintronic devices
T Windbacher, J Ghosh, A Makarov, V Sverdlov, S Selberherr
International Journal of Nanotechnology 12 (3-4), 313-331, 2015
Fluorine‐Containing n‐6 and Angular and Linear n‐6‐n’(n, n’= 5, 6, 7) Diaza‐Heterocyclic Scaffolds Assembled on Benzene Core in Unified Way
DO Prima, AG Makarov, IY Bagryanskaya, AE Kolesnikov, LV Zargarova, ...
ChemistrySelect 4 (8), 2383-2386, 2019
Novel bias-field-free spin transfer oscillator
T Windbacher, A Makarov, H Mahmoudi, V Sverdlov, S Selberherr
Journal of Applied Physics 115 (17), 17C901, 2014
Modeling emerging non-volatile memories: Current trends and challenges
A Makarov, V Sverdlov, S Selberherr
Physics procedia 25, 99-104, 2012
Chemistry of Herz radicals: a new way to near-IR dyes with multiple long-lived and differently-coloured redox states
AY Makarov, YM Volkova, LA Shundrin, AA Dmitriev, IG Irtegova, ...
Chemical Communications 56 (5), 727-730, 2020
Reliable sub-nanosecond switching of a perpendicular SOT-MRAM cell without external magnetic field
V Sverdlov, A Makarov, S Selberherr
Journal on Systemics, Cybernetics and Informatics 16, 55-59, 2018
Herz radicals: chemistry and materials science
YM Volkova, AY Makarov, EA Pritchina, NP Gritsan, AV Zibarev
Mendeleev Communications 30 (4), 385-394, 2020
Two-pulse magnetic field-free switching scheme for perpendicular SOT-MRAM with a symmetric square free layer
RL De Orio, A Makarov, W Goes, J Ender, S Fiorentini, V Sverdlov
Physica B: Condensed Matter 578, 411743, 2020
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