Emerging memory technologies: Trends, challenges, and modeling methods A Makarov, V Sverdlov, S Selberherr
Microelectronics Reliability 52 (4), 628-634, 2012
83 2012 CMOS-compatible spintronic devices: a review A Makarov, T Windbacher, V Sverdlov, S Selberherr
Semiconductor Science and Technology 31 (11), 113006, 2016
60 2016 Reduction of switching time in pentalayer magnetic tunnel junctions with a composite‐free layer A Makarov, V Sverdlov, D Osintsev, S Selberherr
physica status solidi (RRL)–Rapid Research Letters 5 (12), 420-422, 2011
33 2011 Temperature dependence of the transport properties of spin field-effect transistors built with InAs and Si channels D Osintsev, V Sverdlov, Z Stanojević, A Makarov, S Selberherr
Solid-State Electronics 71, 25-29, 2012
18 2012 Hot-carrier degradation in FinFETs: Modeling, peculiarities, and impact of device topology A Makarov, SE Tyaginov, B Kaczer, M Jech, A Chasin, A Grill, G Hellings, ...
2017 IEEE International Electron Devices Meeting (IEDM), 13.1. 1-13.1. 4, 2017
17 2017 Fast switching in magnetic tunnel junctions with two pinned layers: Micromagnetic modeling A Makarov, V Sverdlov, D Osintsev, S Selberherr
IEEE transactions on magnetics 48 (4), 1289-1292, 2012
17 2012 Stochastic model of the resistive switching mechanism in bipolar resistive random access memory: Monte Carlo simulations A Makarov, V Sverdlov, S Selberherr
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2011
17 2011 Two-pulse sub-ns switching scheme for advanced spin-orbit torque MRAM V Sverdlov, A Makarov, S Selberherr
Solid-State Electronics 155, 49-56, 2019
10 2019 Novel bias-field-free spin transfer oscillator T Windbacher, A Makarov, H Mahmoudi, V Sverdlov, S Selberherr
Journal of Applied Physics 115 (17), 17C901, 2014
10 2014 Modelling of multipurpose spintronic devices T Windbacher, J Ghosh, A Makarov, V Sverdlov, S Selberherr
International Journal of Nanotechnology 12 (3-4), 313-331, 2015
9 2015 Modeling the effect of random dopants on hot-carrier degradation in FinFETs A Makarov, B Kaczer, P Roussel, A Chasin, A Grill, M Vandemaele, ...
2019 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2019
7 2019 Fluorine‐Containing n‐6 and Angular and Linear n‐6‐n’(n, n’= 5, 6, 7) Diaza‐Heterocyclic Scaffolds Assembled on Benzene Core in Unified Way DO Prima, AG Makarov, IY Bagryanskaya, AE Kolesnikov, LV Zargarova, ...
ChemistrySelect 4 (8), 2383-2386, 2019
7 2019 Reliable sub-nanosecond switching of a perpendicular SOT-MRAM cell without external magnetic field V Sverdlov, A Makarov, S Selberherr
Journal on Systemics, Cybernetics and Informatics 16, 55-59, 2018
7 2018 Influence of magnetization variations in the free layer on a non-volatile magnetic flip flop T Windbacher, A Makarov, V Sverdlov, S Selberherr
Solid-State Electronics 108, 2-7, 2015
7 2015 Modeling emerging non-volatile memories: Current trends and challenges A Makarov, V Sverdlov, S Selberherr
Physics procedia 25, 99-104, 2012
7 2012 Fast switching in magnetic tunnel junctions with double barrier layer A Makarov, V Sverdlov, D Osintsev, S Selberherr
Proc. SSDM, 456-457, 2011
7 2011 Full ( M Vandemaele, B Kaczer, S Tyaginov, Z Stanojević, A Makarov, A Chasin, ...
2019 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2019
6 2019 Novel buffered magnetic logic gate grid T Windbacher, A Makarov, V Sverdlov, S Selberherr
ECS Transactions 66 (4), 295, 2015
6 2015 Magnetic tunnel junctions with a composite free layer: a new concept for future universal memory A Makarov, V Sverdlov, S Selberherr
Future Trends in Microelectronics-Frontiers and Innovations], S. Luryi, J …, 2013
6 2013 Stochastic modeling of bipolar resistive switching in metal-oxide based memory by Monte Carlo technique A Makarov, V Sverdlov, S Selberherr
Journal of computational electronics 9 (3-4), 146-152, 2010
6 2010 
Siegfried SelberherrInstitute for Microelectronics, TU WienПодтвержден адрес электронной почты в домене TUWien.ac.at
