Measurement of the band offsets between amorphous LF Edge, DG Schlom, SA Chambers, E Cicerrella, JL Freeouf, ...
Applied physics letters 84 (5), 726-728, 2004
202 2004 Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications K Cheng, A Khakifirooz, P Kulkarni, S Ponoth, J Kuss, D Shahrjerdi, ...
2009 IEEE international electron devices meeting (IEDM), 1-4, 2009
169 2009 A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications S Krishnan, U Kwon, N Moumen, MW Stoker, ECT Harley, S Bedell, ...
2011 International Electron Devices Meeting, 28.1. 1-28.1. 4, 2011
123 2011 A 0.063 µm2 FinFET SRAM cell demonstration with conventional lithography using a novel integration scheme with aggressively scaled fin and gate pitch VS Basker, T Standaert, H Kawasaki, CC Yeh, K Maitra, T Yamashita, ...
2010 Symposium on VLSI Technology, 19-20, 2010
119 2010 High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET K Cheng, A Khakifirooz, N Loubet, S Luning, T Nagumo, M Vinet, Q Liu, ...
2012 International Electron Devices Meeting, 18.1. 1-18.1. 4, 2012
116 2012 Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon LF Edge, DG Schlom, RT Brewer, YJ Chabal, JR Williams, SA Chambers, ...
Applied physics letters 84 (23), 4629-4631, 2004
111 2004 Circuit quantum electrodynamics architecture for gate-defined quantum dots in silicon X Mi, JV Cady, DM Zajac, J Stehlik, LF Edge, JR Petta
Applied Physics Letters 110 (4), 043502, 2017
97 2017 High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond Q Liu, M Vinet, J Gimbert, N Loubet, R Wacquez, L Grenouillet, Y Le Tiec, ...
2013 IEEE International Electron Devices Meeting, 9.2. 1-9.2. 4, 2013
96 2013 22 nm technology compatible fully functional 0.1 μm2 6T-SRAM cell BS Haran, A Kumar, L Adam, J Chang, V Basker, S Kanakasabapathy, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
92 2008 Low-frequency charge noise in Si/SiGe quantum dots EJ Connors, JJ Nelson, H Qiao, LF Edge, JM Nichol
Physical Review B 100 (16), 165305, 2019
90 2019 Fully depleted extremely thin SOI technology fabricated by a novel integration scheme featuring implant-free, zero-silicon-loss, and faceted raised source/drain K Cheng, A Khakifirooz, P Kulkarni, S Kanakasabapathy, S Schmitz, ...
2009 Symposium on VLSI Technology, 212-213, 2009
90 2009 Outdiffusion of La and Al from amorphous P Sivasubramani, MJ Kim, BE Gnade, RM Wallace, LF Edge, DG Schlom, ...
Applied Physics Letters 86 (20), 201901, 2005
89 2005 Ultra-thin-body and BOX (UTBB) fully depleted (FD) device integration for 22nm node and beyond Q Liu, A Yagishita, N Loubet, A Khakifirooz, P Kulkarni, T Yamamoto, ...
2010 Symposium on VLSI Technology, 61-62, 2010
86 2010 Conduction band-edge States associated with the removal of d-state degeneracies by the Jahn-Teller effect G Lucovsky, CC Fulton, Y Zhang, Y Zou, J Luning, LF Edge, JL Whitten, ...
IEEE Transactions on Device and Materials Reliability 5 (1), 65-83, 2005
85 2005 Electrical characterization of amorphous lanthanum aluminate thin films grown by molecular-beam deposition on silicon LF Edge, DG Schlom, P Sivasubramani, RM Wallace, B Holländer, ...
Applied physics letters 88 (11), 112907, 2006
80 2006 Site-Selective Quantum Control in an Isotopically Enriched AJ Sigillito, JC Loy, DM Zajac, MJ Gullans, LF Edge, JR Petta
Physical Review Applied 11 (6), 061006, 2019
73 2019 Si-compatible candidates for high-κ dielectrics with the P b n m perovskite structure S Coh, T Heeg, JH Haeni, MD Biegalski, J Lettieri, LF Edge, KE O’Brien, ...
Physical Review B 82 (6), 064101, 2010
71 2010 Measurement of oxygen diffusion in nanometer scale S Zafar, H Jagannathan, LF Edge, D Gupta
Applied Physics Letters 98 (15), 152903, 2011
69 2011 Coherent transfer of quantum information in a silicon double quantum dot using resonant swap gates AJ Sigillito, MJ Gullans, LF Edge, M Borselli, JR Petta
npj Quantum Information 5 (1), 110, 2019
66 2019 Borderless contact for replacement gate employing selective deposition LF Edge, BS Haran
US Patent 8,232,607, 2012
60 2012 