Lisa Edge
Lisa Edge
Bestätigte E-Mail-Adresse bei
Zitiert von
Zitiert von
Measurement of the band offsets between amorphous and silicon
LF Edge, DG Schlom, SA Chambers, E Cicerrella, JL Freeouf, ...
Applied physics letters 84 (5), 726-728, 2004
Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications
K Cheng, A Khakifirooz, P Kulkarni, S Ponoth, J Kuss, D Shahrjerdi, ...
2009 IEEE international electron devices meeting (IEDM), 1-4, 2009
A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
S Krishnan, U Kwon, N Moumen, MW Stoker, ECT Harley, S Bedell, ...
2011 International Electron Devices Meeting, 28.1. 1-28.1. 4, 2011
A 0.063 µm2FinFET SRAM cell demonstration with conventional lithography using a novel integration scheme with aggressively scaled fin and gate pitch
VS Basker, T Standaert, H Kawasaki, CC Yeh, K Maitra, T Yamashita, ...
2010 Symposium on VLSI Technology, 19-20, 2010
High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET
K Cheng, A Khakifirooz, N Loubet, S Luning, T Nagumo, M Vinet, Q Liu, ...
2012 International Electron Devices Meeting, 18.1. 1-18.1. 4, 2012
Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon
LF Edge, DG Schlom, RT Brewer, YJ Chabal, JR Williams, SA Chambers, ...
Applied physics letters 84 (23), 4629-4631, 2004
Circuit quantum electrodynamics architecture for gate-defined quantum dots in silicon
X Mi, JV Cady, DM Zajac, J Stehlik, LF Edge, JR Petta
Applied Physics Letters 110 (4), 043502, 2017
High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond
Q Liu, M Vinet, J Gimbert, N Loubet, R Wacquez, L Grenouillet, Y Le Tiec, ...
2013 IEEE International Electron Devices Meeting, 9.2. 1-9.2. 4, 2013
22 nm technology compatible fully functional 0.1 μm26T-SRAM cell
BS Haran, A Kumar, L Adam, J Chang, V Basker, S Kanakasabapathy, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
Low-frequency charge noise in Si/SiGe quantum dots
EJ Connors, JJ Nelson, H Qiao, LF Edge, JM Nichol
Physical Review B 100 (16), 165305, 2019
Fully depleted extremely thin SOI technology fabricated by a novel integration scheme featuring implant-free, zero-silicon-loss, and faceted raised source/drain
K Cheng, A Khakifirooz, P Kulkarni, S Kanakasabapathy, S Schmitz, ...
2009 Symposium on VLSI Technology, 212-213, 2009
Outdiffusion of La and Al from amorphous in direct contact with Si (001)
P Sivasubramani, MJ Kim, BE Gnade, RM Wallace, LF Edge, DG Schlom, ...
Applied Physics Letters 86 (20), 201901, 2005
Ultra-thin-body and BOX (UTBB) fully depleted (FD) device integration for 22nm node and beyond
Q Liu, A Yagishita, N Loubet, A Khakifirooz, P Kulkarni, T Yamamoto, ...
2010 Symposium on VLSI Technology, 61-62, 2010
Conduction band-edge States associated with the removal of d-state degeneracies by the Jahn-Teller effect
G Lucovsky, CC Fulton, Y Zhang, Y Zou, J Luning, LF Edge, JL Whitten, ...
IEEE Transactions on Device and Materials Reliability 5 (1), 65-83, 2005
Electrical characterization of amorphous lanthanum aluminate thin films grown by molecular-beam deposition on silicon
LF Edge, DG Schlom, P Sivasubramani, RM Wallace, B Holländer, ...
Applied physics letters 88 (11), 112907, 2006
Site-Selective Quantum Control in an Isotopically Enriched Quadruple Quantum Dot
AJ Sigillito, JC Loy, DM Zajac, MJ Gullans, LF Edge, JR Petta
Physical Review Applied 11 (6), 061006, 2019
Si-compatible candidates for high-κ dielectrics with the P b n m perovskite structure
S Coh, T Heeg, JH Haeni, MD Biegalski, J Lettieri, LF Edge, KE O’Brien, ...
Physical Review B 82 (6), 064101, 2010
Measurement of oxygen diffusion in nanometer scale gate dielectric films
S Zafar, H Jagannathan, LF Edge, D Gupta
Applied Physics Letters 98 (15), 152903, 2011
Coherent transfer of quantum information in a silicon double quantum dot using resonant swap gates
AJ Sigillito, MJ Gullans, LF Edge, M Borselli, JR Petta
npj Quantum Information 5 (1), 110, 2019
Borderless contact for replacement gate employing selective deposition
LF Edge, BS Haran
US Patent 8,232,607, 2012
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20