Measurement of the band offsets between amorphous LF Edge, DG Schlom, SA Chambers, E Cicerrella, JL Freeouf, ...
Applied Physics Letters 84 (5), 726-728, 2004
201 2004 Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications K Cheng, A Khakifirooz, P Kulkarni, S Ponoth, J Kuss, D Shahrjerdi, ...
2009 IEEE international electron devices meeting (IEDM), 1-4, 2009
174 2009 Low-frequency charge noise in Si/SiGe quantum dots EJ Connors, JJ Nelson, H Qiao, LF Edge, JM Nichol
Physical Review B 100 (16), 165305, 2019
149 2019 A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications S Krishnan, U Kwon, N Moumen, MW Stoker, ECT Harley, S Bedell, ...
2011 International Electron Devices Meeting, 28.1. 1-28.1. 4, 2011
128 2011 High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond Q Liu, M Vinet, J Gimbert, N Loubet, R Wacquez, L Grenouillet, Y Le Tiec, ...
2013 IEEE International Electron Devices Meeting, 9.2. 1-9.2. 4, 2013
124 2013 Circuit quantum electrodynamics architecture for gate-defined quantum dots in silicon X Mi, JV Cady, DM Zajac, J Stehlik, LF Edge, JR Petta
Applied Physics Letters 110 (4), 2017
123 2017 A 0.063 µm2 FinFET SRAM cell demonstration with conventional lithography using a novel integration scheme with aggressively scaled fin and gate pitch VS Basker, T Standaert, H Kawasaki, CC Yeh, K Maitra, T Yamashita, ...
2010 Symposium on VLSI Technology, 19-20, 2010
122 2010 High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET K Cheng, A Khakifirooz, N Loubet, S Luning, T Nagumo, M Vinet, Q Liu, ...
2012 International Electron Devices Meeting, 18.1. 1-18.1. 4, 2012
121 2012 Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon LF Edge, DG Schlom, RT Brewer, YJ Chabal, JR Williams, SA Chambers, ...
Applied physics letters 84 (23), 4629-4631, 2004
120 2004 Fully depleted extremely thin SOI technology fabricated by a novel integration scheme featuring implant-free, zero-silicon-loss, and faceted raised source/drain K Cheng, A Khakifirooz, P Kulkarni, S Kanakasabapathy, S Schmitz, ...
2009 Symposium on VLSI Technology, 212-213, 2009
97 2009 Ultra-thin-body and BOX (UTBB) fully depleted (FD) device integration for 22nm node and beyond Q Liu, A Yagishita, N Loubet, A Khakifirooz, P Kulkarni, T Yamamoto, ...
2010 Symposium on VLSI Technology, 61-62, 2010
96 2010 22 nm technology compatible fully functional 0.1 μm2 6T-SRAM cell BS Haran, A Kumar, L Adam, J Chang, V Basker, S Kanakasabapathy, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
96 2008 Charge-noise spectroscopy of Si/SiGe quantum dots via dynamically-decoupled exchange oscillations EJ Connors, J Nelson, LF Edge, JM Nichol
Nature communications 13 (1), 940, 2022
95 2022 Coherent transfer of quantum information in a silicon double quantum dot using resonant SWAP gates AJ Sigillito, MJ Gullans, LF Edge, M Borselli, JR Petta
npj Quantum Information 5 (1), 110, 2019
94 2019 Outdiffusion of La and Al from amorphous LaAlO3 in direct contact with Si (001) P Sivasubramani, MJ Kim, BE Gnade, RM Wallace, LF Edge, DG Schlom, ...
Applied Physics Letters 86 (20), 2005
92 2005 Measurement of oxygen diffusion in nanometer scale HfO2 gate dielectric films S Zafar, H Jagannathan, LF Edge, D Gupta
Applied Physics Letters 98 (15), 2011
90 2011 Site-Selective Quantum Control in an Isotopically Enriched AJ Sigillito, JC Loy, DM Zajac, MJ Gullans, LF Edge, JR Petta
Physical Review Applied 11 (6), 061006, 2019
89 2019 Electrical characterization of amorphous lanthanum aluminate thin films grown by molecular-beam deposition on silicon LF Edge, DG Schlom, P Sivasubramani, RM Wallace, B Holländer, ...
Applied physics letters 88 (11), 2006
86 2006 Conduction band-edge States associated with the removal of d-state degeneracies by the Jahn-Teller effect G Lucovsky, CC Fulton, Y Zhang, Y Zou, J Luning, LF Edge, JL Whitten, ...
IEEE Transactions on Device and Materials Reliability 5 (1), 65-83, 2005
86 2005 Si-compatible candidates for high- S Coh, T Heeg, JH Haeni, MD Biegalski, J Lettieri, LF Edge, KE O’Brien, ...
Physical Review B—Condensed Matter and Materials Physics 82 (6), 064101, 2010
78 2010 