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Roman M. Balagula (Балагула РМ)
Roman M. Balagula (Балагула РМ)
Center for Physical Sciences and Technology
Verified email at ftmc.lt
Title
Cited by
Cited by
Year
Terahertz radiation associated with the impurity electron transition in quantum wells upon optical and electrical pumping
DA Firsov, LE Vorobjev, VY Panevin, AN Sofronov, RM Balagula, ...
Semiconductors 49, 28-32, 2015
252015
Realization of the Kohn’s theorem in Ge/Si quantum dots with hole gas: Theory and experiment
HA Sarkisyan, DB Hayrapetyan, LS Petrosyan, EM Kazaryan, ...
Nanomaterials 9 (1), 56, 2019
172019
Photoinduced mid-infrared intraband light absorption and photoconductivity in Ge/Si quantum dots
AN Sofronov, LE Vorobjev, DA Firsov, VY Panevin, RM Balagula, ...
Superlattices and microstructures 87, 53-57, 2015
172015
Effect of transverse electric field and temperature on light absorption in GaAs/AlGaAs tunnel-coupled quantum wells
DA Firsov, LE Vorobjev, MY Vinnichenko, RM Balagula, MM Kulagina, ...
Semiconductors 49, 1425-1429, 2015
152015
Modulation of intersubband light absorption and interband photoluminescence in double GaAs/AlGaAs quantum wells under strong lateral electric fields
RM Balagula, MY Vinnichenko, IS Makhov, DA Firsov, LE Vorobjev
Semiconductors 50, 1425-1430, 2016
132016
Spatial coherence of hybrid surface plasmon-phonon-polaritons in shallow n-GaN surface-relief gratings
V Janonis, RM Balagula, I Grigelionis, P Prystawko, I Kašalynas
Optics Express 29 (9), 13839-13851, 2021
122021
Lateral photoconductivity in structures with Ge/Si quantum dots
VY Panevin, AN Sofronov, LE Vorobjev, DA Firsov, VA Shalygin, ...
Semiconductors 47, 1574-1577, 2013
122013
Molecular beam epitaxial growth of dilute nitride GaNAs and GaInNAs nanowires
M Yukimune, R Fujiwara, T Mita, N Tsuda, J Natsui, Y Shimizu, M Jansson, ...
Nanotechnology 30 (24), 244002, 2019
112019
Absorption of far-infrared radiation in Ge/Si quantum dots
AN Sofronov, RM Balagula, DA Firsov, LE Vorobjev, AA Tonkikh, ...
Semiconductors 52, 59-63, 2018
92018
Терагерцовое излучение, связанное с примесными переходами электронов в квантовых ямах при оптической и электрической накачке
ДА Фирсов, ЛЕ Воробьев, ВЮ Паневин, АН Софронов, РМ Балагула, ...
Физика и техника полупроводников 49 (1), 30, 2015
92015
Effects of growth temperature and thermal annealing on optical quality of GaNAs nanowires emitting in the near-infrared spectral range
JE Stehr, RM Balagula, M Jansson, M Yukimune, R Fujiwara, F Ishikawa, ...
Nanotechnology 31 (6), 065702, 2019
82019
Phase modulation of mid-infrared radiation in double-quantum-well structures under a lateral electric field
RM Balagula, MY Vinnichenko, IS Makhov, AN Sofronov, DA Firsov, ...
Semiconductors 51, 363-366, 2017
82017
High-Frequency and High-Power Performance of n-Type GaN Epilayers with Low Electron Density Grown on Native Substrate
RM Balagula, L Subačius, J Jorudas, V Janonis, P Prystawko, ...
Materials 15 (6), 2066, 2022
62022
Increasing N content in GaNAsP nanowires suppresses the impact of polytypism on luminescence
M Jansson, L Francaviglia, R La, R Balagula, JE Stehr, CW Tu, AFI Morral, ...
Nanotechnology 30 (40), 405703, 2019
62019
Temperature evolution of the photoexcited charge carriers dynamics in Ge/Si quantum dots
RM Balagula, AN Sofronov, LE Vorobjev, DA Firsov, AA Tonkikh
Physica E: Low-dimensional Systems and Nanostructures 106, 85-89, 2019
62019
Temperature shift of intraband absorption peak in tunnel-coupled QW structure
V Akimov, DA Firsov, CA Duque, V Tulupenko, RM Balagula, ...
Optical Materials 66, 160-165, 2017
62017
Intersubband light absorption in tunnel-coupled GaAs/AlGaAs quantum wells for electrooptic studies
DA Rybalko, MY Vinnichenko, LE Vorobjev, DA Firsov, RM Balagula, ...
Journal of Physics: Conference Series 541 (1), 012081, 2014
62014
Dependence of the carrier concentration on the current in mid-infrared injection lasers with quantum wells
MY Vinnichenko, LE Vorobjev, DA Firsov, MO Mashko, RM Balagula, ...
Semiconductors 47, 1513-1516, 2013
62013
Electrically-pumped THz emitters based on plasma waves excitation in III-nitride structures
V Janonis, D Pashnev, I Grigelionis, VV Korotyeyev, RM Balagula, ...
Terahertz Emitters, Receivers, and Applications XI 11499, 30-37, 2020
52020
Effects of thermal annealing on localization and strain in core/multishell GaAs/GaNAs/GaAs nanowires
RM Balagula, M Jansson, M Yukimune, JE Stehr, F Ishikawa, WM Chen, ...
Scientific Reports 10 (1), 8216, 2020
52020
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Articles 1–20