| Performance limits of vertical GaN of conventional doped pn and natural polarization superjunction devices X Zhou, J Howell-Clark, Z Guo, C Hitchcock, TP Chow Applied Physics Letters 115, 112104, 2019 | 16 | 2019 |
| Performance Limits of Vertical 4H-SiC and 2H-GaN Superjunction Devices X Zhou, Z Guo, TP Chow Materials Science Forum 963, 693-696, 2019 | 15 | 2019 |
| Performance evaluation of channel length downscaling of various high voltage AlGaN/GaN power HEMTs Z Guo, TP Chow Physica status solidi (a), 2015 | 15 | 2015 |
| Monolithically Integrated GaN LED/Quasi-Vertical Power U-shaped Trench-Gate MOSFET Pairs Using Selective Epi Removal Z Guo, C Hitchcock, C Wetzel, RF Karlicek, G Piao, Y Yano, S Koseki, ... Electron Device Letters 40 (11), 1736-1739, 2019 | 13 | 2019 |
| Modeling and experimental study on sensing response of an AlGaN/GaN HEMT-based hydrogen sensor Z Guo, L Wang, Z Hao, Y Luo Sensors and Actuators B: Chemical 176, 241-247, 2013 | 12 | 2013 |
| Integrable Quasivertical GaN U‐Shaped Trench‐Gate Metal‐Oxide‐Semiconductor Field‐Effect Transistors for Power and Optoelectronic Integrated Circuits Z Guo, C Hitchcock, RF Karlicek, G Piao, Y Yano, S Koseki, T Tabuchi, ... physica status solidi (a), 1900615, 2019 | 7 | 2019 |
| Comparative performance evaluation of lateral and vertical GaN high-voltage power field-effect transistors Z Guo, C Hitchcock, TSP Chow Japanese Journal of Applied Physics 58, SCCD09, 2019 | 7 | 2019 |
| GaN smart power devices and integrated circuits TP Chow, Z Guo Wide Bandgap Semiconductor Power Devices, 151-208, 2019 | 7 | 2019 |
| Comparison of silicon, SiC and GaN power transistor technologies with breakdown voltage rating from 1.2 kV to 15 kV S Chowdhury, Z Guo, X Liu, TP Chow physica status solidi (c) 13 (5‐6), 354-359, 2016 | 6 | 2016 |
| Lossless turn‐off switching projection of lateral and vertical GaN power field‐effect transistors Z Guo, C Hitchcock, TSP Chow physica status solidi (a) 214 (8), 1600820, 2017 | 4 | 2017 |
| Improved electrical performance of MOCVD-grown GaN p-i-n diodes with high-low junction p-layers J Howell-Clark, Z Guo, C Wetzel, TP Chow, P Guanxi, Y Yano, T Tabuchi, ... Solid-State Electronics, 2019 | 3 | 2019 |
| Performance projection of high-voltage, quasi-lateral diamond MOSFET for power electronics applications Z Guo, TP Chow Diamond and Related Materials 104, 107741, 2020 | 2 | 2020 |
| Temperature dependence of GaN MOS capacitor characteristics Z Guo, K Tang, TP Chow physica status solidi (c) 13 (5‐6), 336-340, 2016 | 2 | 2016 |
| pH sensor based on an AlGaN/GaN HEMT structure Z Guo, L Wang, Z Hao, Y Luo Procedia Engineering 27, 693-697, 2012 | 2 | 2012 |
| Second Breakdown and Robustness of Vertical and Lateral GaN Power Field‐Effect Transistors Z Guo, C Hitchcock, TP Chow physica status solidi (a) 214 (12), 1600822, 2017 | 1 | 2017 |
| Integrable Quasi-vertical Gallium Nitride Power UMOSFETs and Their Application to Monolithic Optoelectronic Integration Z Guo Rensselaer Polytechnic Institute, 2019 | | 2019 |
| Development of hydrogen sensor based on AlGaN/GaN high electron mobility transistor structure G Zhibo, W Lai, H Zhibiao, L Yi Chinese Journal of Vacuum Science and Technology 32 (12), 1089-1092, 2012 | | 2012 |
T. Paul ChowProfessor, Rensselaer Polytechnic InstituteBestätigte E-Mail-Adresse bei rpi.edu
