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Stephen A Church
Stephen A Church
Research associate, University of Manchester
Bestätigte E-Mail-Adresse bei manchester.ac.uk - Startseite
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Zitiert von
Zitiert von
Jahr
Photoluminescence studies of cubic GaN epilayers
SA Church, S Hammersley, PW Mitchell, MJ Kappers, SL Sahonta, ...
physica status solidi (b) 254 (8), 1600733, 2017
252017
Effect of stacking faults on the photoluminescence spectrum of zincblende GaN
SA Church, S Hammersley, PW Mitchell, MJ Kappers, LY Lee, ...
Journal of Applied Physics 123 (18), 2018
142018
Insight into the impact of atomic-and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m-plane freestanding GaN substrates
F Tang, T Zhu, WY Fu, F Oehler, S Zhang, JT Griffiths, C Humphreys, ...
Journal of Applied Physics 125 (22), 2019
112019
Photoluminescence efficiency of zincblende InGaN/GaN quantum wells
SA Church, M Quinn, K Cooley-Greene, B Ding, A Gundimeda, ...
Journal of Applied Physics 129 (17), 2021
102021
Optical characterisation of nanowire lasers
SA Church, R Al-Abri, P Parkinson, D Saxena
Progress in Quantum Electronics 85, 100408, 2022
92022
Stacking fault-associated polarized surface-emitted photoluminescence from zincblende InGaN/GaN quantum wells
SA Church, B Ding, PW Mitchell, MJ Kappers, M Frentrup, G Kusch, ...
Applied Physics Letters 117 (3), 2020
92020
High performance software in multidimensional reduction methods for image processing with application to ancient manuscripts
CTC Arsene, S Church, M Dickinson
arXiv preprint arXiv:1612.06457, 2016
92016
Holistic nanowire laser characterization as a route to optimal design
SA Church, N Patel, R Al‐Abri, N Al‐Amairi, Y Zhang, H Liu, P Parkinson
Advanced Optical Materials 11 (7), 2202476, 2023
62023
Characterization of buried interfaces using Ga Kα hard X-ray photoelectron spectroscopy (HAXPES)
BF Spencer, SA Church, P Thompson, DJH Cant, S Maniyarasu, ...
Faraday Discussions 236, 311-337, 2022
62022
Holistic Determination of Optoelectronic Properties using High-Throughput Spectroscopy of Surface-Guided CsPbBr3 Nanowires
SA Church, H Choi, N Al-Amairi, R Al-Abri, E Sanders, E Oksenberg, ...
ACS nano 16 (6), 9086-9094, 2022
32022
The effect of thermal annealing on the optical properties of Mg-doped zincblende GaN epilayers
D Dyer, SA Church, M Jain, MJ Kappers, M Frentrup, DJ Wallis, RA Oliver, ...
Journal of Applied Physics 130 (8), 2021
32021
Effect of micron-scale photoluminescence variation on droop measurements in InGaN/GaN quantum wells
RM Barrett, R Ahumada-Lazo, JA Alanis, P Parkinson, SA Church, ...
Journal of Physics: Conference Series 1919 (1), 012011, 2021
22021
Bottom-up, chip-scale engineering of low threshold, multi-quantum-well microring lasers
WW Wong, N Wang, BD Esser, SA Church, L Li, M Lockrey, I Aharonovich, ...
ACS nano 17 (15), 15065-15076, 2023
12023
Improving quantum well tube homogeneity using strained nanowire heterostructures
N Patel, HA Fonseka, Y Zhang, S Church, R Al-Abri, A Sanchez, H Liu, ...
ACS applied materials & interfaces 15 (8), 10958-10964, 2023
12023
Robust Measurement of Nanowire Laser Performance Across 6 Designs using Experimental Big-Data
SA Church, N Patel, R Al-Abri, N Al-Amairi, AGS Vilasam, H Tan, ...
2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), 880-880, 2023
2023
Sub‐Picosecond Carrier Dynamics Explored using Automated High‐Throughput Studies of Doping Inhomogeneity within a Bayesian Framework
R Al‐Abri, N Al Amairi, S Church, C Byrne, S Sivakumar, A Walton, ...
Small 19 (33), 2300053, 2023
2023
Polarised Emission from Quantum Wires in Cubic GaN
D Wallis, R Oliver, M Kappers, P Dawson, S Church, D Binks
US Patent App. 17/765,751, 2022
2022
Selective Area Epitaxy of InP/InAsP Multi-Quantum Well Micro-Ring Lasers
WW Wong, S Church, C Jagadish, N Wang, P Parkinson, HH Tan
2022 IEEE Photonics Conference (IPC), 1-2, 2022
2022
Disentangling Gain, Distributed Losses and End-Facet Losses in Freestanding Nanowire Lasers using Automated High-Throughput Micro-Spectroscopy
S Church, Y Zhang, R Al-Abri, N Al-Amari, H Liu, P Parkinson
Novel Optical Materials and Applications, NoTh3C. 1, 2022
2022
Effect of Si-doped InGaN underlayers on photoluminescence efficiency and recombination dynamics in InGaN/GaN quantum wells
SA Church, GM Christian, RM Barrett, S Hammersley, MJ Kappers, ...
Journal of Physics D: Applied Physics 54 (47), 475104, 2021
2021
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