Antonio Massimiliano Mio
Antonio Massimiliano Mio
PostDoc Fellow, Consiglio Nazionale delle Ricerche - Istituto per la Microelettronica e Microsistemi
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TitelZitiert vonJahr
Metal-insulator transition driven by vacancy ordering in GeSbTe phase change materials
V Bragaglia, F Arciprete, W Zhang, AM Mio, E Zallo, K Perumal, ...
Scientific reports 6, 23843, 2016
572016
Unique bond breaking in crystalline phase change materials and the quest for metavalent bonding
M Zhu, O Cojocaru‐Mirédin, AM Mio, J Keutgen, M Küpers, Y Yu, JY Cho, ...
Advanced Materials 30 (18), 1706735, 2018
452018
Quasiparticle spectrum and plasmonic excitations in the topological insulator
IA Nechaev, I Aguilera, V De Renzi, A Di Bona, AL Rizzini, AM Mio, ...
Physical Review B 91 (24), 245123, 2015
402015
Amorphous-Crystal phase transitions in GexTe1-x alloys
E Carria, AM Mio, S Gibilisco, M Miritello, C Bongiorno, MG Grimaldi, ...
Journal of The Electrochemical Society 159 (2), H130-H139, 2011
262011
Unexpected Ge–Ge Contacts in the Two‐Dimensional Ge4Se3Te Phase and Analysis of Their Chemical Cause with the Density of Energy (DOE) Function
M Küpers, PM Konze, S Maintz, S Steinberg, AM Mio, O Cojocaru‐Mirédin, ...
Angewandte Chemie International Edition 56 (34), 10204-10208, 2017
232017
Chemical and structural arrangement of the trigonal phase in GeSbTe thin films
AM Mio, SMS Privitera, V Bragaglia, F Arciprete, C Bongiorno, R Calarco, ...
Nanotechnology 28 (6), 065706, 2017
222017
Light harvesting with Ge quantum dots embedded in SiO2 or Si3N4
S Cosentino, E Sungur Ozen, R Raciti, AM Mio, G Nicotra, F Simone, ...
Journal of Applied Physics 115 (4), 043103, 2014
212014
Nucleation and grain growth in as deposited and ion implanted GeTe thin films
AM Mio, E Carria, G D'Arrigo, S Gibilisco, M Miritello, MG Grimaldi, ...
Journal of Non-Crystalline Solids 357 (10), 2197-2201, 2011
212011
Ageing mechanisms of highly active and stable nickel-coated silicon photoanodes for water splitting
T Han, Y Shi, X Song, A Mio, L Valenti, F Hui, S Privitera, S Lombardo, ...
Journal of Materials Chemistry A 4 (21), 8053-8060, 2016
202016
Polymorphism of amorphous Ge2Sb2Te5 probed by EXAFS and raman spectroscopy
E Carria, AM Mio, S Gibilisco, M Miritello, F d’Acapito, MG Grimaldi, ...
Electrochemical and Solid-State Letters 14 (12), H480-H482, 2011
192011
Crystallization of ion amorphized thin films in presence of cubic or hexagonal phase
R De Bastiani, E Carria, S Gibilisco, A Mio, C Bongiorno, F Piccinelli, ...
Journal of Applied Physics 107 (11), 113521, 2010
162010
Local Order and Crystallization of Laser Quenched and Ion Implanted Amorphous Ge1− x Te x Thin Films
E Carria, AM Mio, M Miritello, S Gibilisco, R De Bastiani, AR Pennisi, ...
Electrochemical and Solid-State Letters 13 (9), H317-H320, 2010
152010
Ag-segregation to dislocations in PbTe-based thermoelectric materials
Y Yu, S Zhang, AM Mio, B Gault, A Sheskin, C Scheu, D Raabe, F Zu, ...
ACS applied materials & interfaces 10 (4), 3609-3615, 2018
132018
Tuning the crystallization temperature of amorphous Ge2Sb2Te5 by O and Si recoil implantation
E Carria, AM Mio, S Gibilisco, M Miritello, MG Grimaldi, E Rimini
Electrochemical and Solid-State Letters 14 (3), H124-H127, 2011
132011
The role of the interface in germanium quantum dots: when not only size matters for quantum confinement effects
S Cosentino, AM Mio, EG Barbagiovanni, R Raciti, R Bahariqushchi, ...
Nanoscale 7 (26), 11401-11408, 2015
122015
Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys
E Zallo, S Cecchi, JE Boschker, AM Mio, F Arciprete, S Privitera, ...
Scientific reports 7 (1), 1466, 2017
102017
Structural and electronic transitions in G e 2 S b 2 T e 5 induced by ion irradiation damage
SMS Privitera, AM Mio, E Smecca, A Alberti, W Zhang, R Mazzarello, ...
Physical Review B 94 (9), 094103, 2016
102016
Genesis and Effects of Swapping Bilayers in Hexagonal GeSb2Te4
JJ Wang, J Wang, H Du, L Lu, PC Schmitz, J Reindl, AM Mio, CL Jia, E Ma, ...
Chemistry of Materials 30 (14), 4770-4777, 2018
92018
Role of interfaces on the stability and electrical properties of Ge 2 Sb 2 Te 5 crystalline structures
AM Mio, SMS Privitera, V Bragaglia, F Arciprete, S Cecchi, G Litrico, ...
Scientific reports 7 (1), 2616, 2017
82017
Absorption edges of black phosphorus: a comparative analysis
G Nicotra, A Politano, AM Mio, I Deretzis, J Hu, ZQ Mao, J Wei, ...
physica status solidi (b) 253 (12), 2509-2514, 2016
82016
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