Recent advances in wide bandgap semiconductor biological and gas sensors SJ Pearton, F Ren, YL Wang, BH Chu, KH Chen, CY Chang, W Lim, J Lin, ...
Progress in Materials Science 55 (1), 1-59, 2010
320 2010 Room temperature deposited indium zinc oxide thin film transistors YL Wang, F Ren, W Lim, DP Norton, SJ Pearton, II Kravchenko, ...
Applied physics letters 90 (23), 2007
182 2007 Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors SY Sung, JH Choi, UB Han, KC Lee, JH Lee, JJ Kim, W Lim, SJ Pearton, ...
Applied physics letters 96 (10), 2010
169 2010 High-performance indium gallium zinc oxide transparent thin-film transistors fabricated by radio-frequency sputtering W Lim, SH Kim, YL Wang, JW Lee, DP Norton, SJ Pearton, F Ren, ...
Journal of The Electrochemical Society 155 (6), H383, 2008
141 2008 High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates W Lim, JH Jang, SH Kim, DP Norton, V Craciun, SJ Pearton, F Ren, ...
Applied Physics Letters 93 (8), 2008
139 2008 Room temperature hydrogen detection using Pd-coated GaN nanowires W Lim, JS Wright, BP Gila, JL Johnson, A Ural, T Anderson, F Ren, ...
Applied Physics Letters 93 (7), 2008
134 2008 High mobility InGaZnO4 thin-film transistors on paper W Lim, EA Douglas, SH Kim, DP Norton, SJ Pearton, F Ren, H Shen, ...
Applied Physics Letters 94 (7), 2009
113 2009 Nitride and oxide semiconductor nanostructured hydrogen gas sensors JS Wright, W Lim, DP Norton, SJ Pearton, F Ren, JL Johnson, A Ural
Semiconductor Science and Technology 25 (2), 024002, 2010
99 2010 Hydrogen sensing with Pt-functionalized GaN nanowires JS Wright, W Lim, BP Gila, SJ Pearton, JL Johnson, A Ural, F Ren
Sensors and Actuators B: Chemical 140 (1), 196-199, 2009
99 2009 Low-voltage indium gallium zinc oxide thin film transistors on paper substrates W Lim, EA Douglas, DP Norton, SJ Pearton, F Ren, YW Heo, SY Son, ...
Applied Physics Letters 96 (5), 2010
96 2010 Stable room temperature deposited amorphous thin film transistors W Lim, SH Kim, YL Wang, JW Lee, DP Norton, SJ Pearton, F Ren, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008
85 2008 Temperature dependence of current-voltage characteristics of Ni–AlGaN/GaN Schottky diodes W Lim, JH Jeong, JH Lee, SB Hur, JK Ryu, KS Kim, TH Kim, SY Song, ...
Applied Physics Letters 97 (24), 2010
67 2010 ZnO and related materials for sensors and light-emitting diodes SJ Pearton, WT Lim, JS Wright, LC Tien, HS Kim, DP Norton, HT Wang, ...
Journal of Electronic Materials 37, 1426-1432, 2008
64 2008 Light source module, display panel, and display apparatus including the same NG Cha, YII Kim, WT Lim
US Patent 9,825,014, 2017
58 2017 Light-emitting diode (LED), LED package and apparatus including the same H Yoo, YI Kim, NG Cha, W Lim, KW Hwang, S Sim, H Noh
US Patent 9,799,809, 2017
57 2017 Growth and characterization of GaN nanowires for hydrogen sensors JL Johnson, Y Choi, A Ural, W Lim, JS Wright, BP Gila, F Ren, SJ Pearton
Journal of electronic materials 38, 490-494, 2009
55 2009 Localized surface plasmon-enhanced near-ultraviolet emission from InGaN/GaN light-emitting diodes using silver and platinum nanoparticles SH Hong, CY Cho, SJ Lee, SY Yim, W Lim, ST Kim, SJ Park
Optics express 21 (3), 3138-3144, 2013
52 2013 Light emitting device package YI Kim, HS Won, WT Lim, NG Cha
US Patent 10,230,021, 2019
50 2019 Low-temperature-fabricated InGaZnO4 thin film transistors on polyimide clean-room tape W Lim, EA Douglas, SH Kim, DP Norton, SJ Pearton, F Ren, H Shen, ...
Applied Physics Letters 93 (25), 2008
49 2008 Improvement in bias stability of amorphous-InGaZnO4 thin film transistors with SiOx passivation layers W Lim, EA Douglas, DP Norton, SJ Pearton, F Ren, YW Heo, SY Son, ...
Journal of Vacuum Science & Technology B 28 (1), 116-119, 2010
44 2010