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Wantae Lim
Wantae Lim
Bestätigte E-Mail-Adresse bei samsung.com
Titel
Zitiert von
Zitiert von
Jahr
Recent advances in wide bandgap semiconductor biological and gas sensors
SJ Pearton, F Ren, YL Wang, BH Chu, KH Chen, CY Chang, W Lim, J Lin, ...
Progress in Materials Science 55 (1), 1-59, 2010
3202010
Room temperature deposited indium zinc oxide thin film transistors
YL Wang, F Ren, W Lim, DP Norton, SJ Pearton, II Kravchenko, ...
Applied physics letters 90 (23), 2007
1822007
Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors
SY Sung, JH Choi, UB Han, KC Lee, JH Lee, JJ Kim, W Lim, SJ Pearton, ...
Applied physics letters 96 (10), 2010
1692010
High-performance indium gallium zinc oxide transparent thin-film transistors fabricated by radio-frequency sputtering
W Lim, SH Kim, YL Wang, JW Lee, DP Norton, SJ Pearton, F Ren, ...
Journal of The Electrochemical Society 155 (6), H383, 2008
1412008
High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates
W Lim, JH Jang, SH Kim, DP Norton, V Craciun, SJ Pearton, F Ren, ...
Applied Physics Letters 93 (8), 2008
1392008
Room temperature hydrogen detection using Pd-coated GaN nanowires
W Lim, JS Wright, BP Gila, JL Johnson, A Ural, T Anderson, F Ren, ...
Applied Physics Letters 93 (7), 2008
1342008
High mobility InGaZnO4 thin-film transistors on paper
W Lim, EA Douglas, SH Kim, DP Norton, SJ Pearton, F Ren, H Shen, ...
Applied Physics Letters 94 (7), 2009
1132009
Nitride and oxide semiconductor nanostructured hydrogen gas sensors
JS Wright, W Lim, DP Norton, SJ Pearton, F Ren, JL Johnson, A Ural
Semiconductor Science and Technology 25 (2), 024002, 2010
992010
Hydrogen sensing with Pt-functionalized GaN nanowires
JS Wright, W Lim, BP Gila, SJ Pearton, JL Johnson, A Ural, F Ren
Sensors and Actuators B: Chemical 140 (1), 196-199, 2009
992009
Low-voltage indium gallium zinc oxide thin film transistors on paper substrates
W Lim, EA Douglas, DP Norton, SJ Pearton, F Ren, YW Heo, SY Son, ...
Applied Physics Letters 96 (5), 2010
962010
Stable room temperature deposited amorphous thin film transistors
W Lim, SH Kim, YL Wang, JW Lee, DP Norton, SJ Pearton, F Ren, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008
852008
Temperature dependence of current-voltage characteristics of Ni–AlGaN/GaN Schottky diodes
W Lim, JH Jeong, JH Lee, SB Hur, JK Ryu, KS Kim, TH Kim, SY Song, ...
Applied Physics Letters 97 (24), 2010
672010
ZnO and related materials for sensors and light-emitting diodes
SJ Pearton, WT Lim, JS Wright, LC Tien, HS Kim, DP Norton, HT Wang, ...
Journal of Electronic Materials 37, 1426-1432, 2008
642008
Light source module, display panel, and display apparatus including the same
NG Cha, YII Kim, WT Lim
US Patent 9,825,014, 2017
582017
Light-emitting diode (LED), LED package and apparatus including the same
H Yoo, YI Kim, NG Cha, W Lim, KW Hwang, S Sim, H Noh
US Patent 9,799,809, 2017
572017
Growth and characterization of GaN nanowires for hydrogen sensors
JL Johnson, Y Choi, A Ural, W Lim, JS Wright, BP Gila, F Ren, SJ Pearton
Journal of electronic materials 38, 490-494, 2009
552009
Localized surface plasmon-enhanced near-ultraviolet emission from InGaN/GaN light-emitting diodes using silver and platinum nanoparticles
SH Hong, CY Cho, SJ Lee, SY Yim, W Lim, ST Kim, SJ Park
Optics express 21 (3), 3138-3144, 2013
522013
Light emitting device package
YI Kim, HS Won, WT Lim, NG Cha
US Patent 10,230,021, 2019
502019
Low-temperature-fabricated InGaZnO4 thin film transistors on polyimide clean-room tape
W Lim, EA Douglas, SH Kim, DP Norton, SJ Pearton, F Ren, H Shen, ...
Applied Physics Letters 93 (25), 2008
492008
Improvement in bias stability of amorphous-InGaZnO4 thin film transistors with SiOx passivation layers
W Lim, EA Douglas, DP Norton, SJ Pearton, F Ren, YW Heo, SY Son, ...
Journal of Vacuum Science & Technology B 28 (1), 116-119, 2010
442010
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