Recent advances in wide bandgap semiconductor biological and gas sensors SJ Pearton, F Ren, YL Wang, BH Chu, KH Chen, CY Chang, W Lim, J Lin, ...
Progress in Materials Science 55 (1), 1-59, 2010
308 2010 Room temperature deposited indium zinc oxide thin film transistors YL Wang, F Ren, W Lim, DP Norton, SJ Pearton, II Kravchenko, ...
Applied physics letters 90 (23), 232103, 2007
180 2007 Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors SY Sung, JH Choi, UB Han, KC Lee, JH Lee, JJ Kim, W Lim, SJ Pearton, ...
Applied physics letters 96 (10), 102107, 2010
162 2010 High-performance indium gallium zinc oxide transparent thin-film transistors fabricated by radio-frequency sputtering W Lim, SH Kim, YL Wang, JW Lee, DP Norton, SJ Pearton, F Ren, ...
Journal of The Electrochemical Society 155 (6), H383, 2008
137 2008 High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates W Lim, JH Jang, SH Kim, DP Norton, V Craciun, SJ Pearton, F Ren, ...
Applied Physics Letters 93 (8), 082102, 2008
136 2008 Room temperature hydrogen detection using Pd-coated GaN nanowires W Lim, JS Wright, BP Gila, JL Johnson, A Ural, T Anderson, F Ren, ...
Applied Physics Letters 93 (7), 072109, 2008
133 2008 High mobility W Lim, EA Douglas, SH Kim, DP Norton, SJ Pearton, F Ren, H Shen, ...
Applied Physics Letters 94 (7), 072103, 2009
113 2009 Hydrogen sensing with Pt-functionalized GaN nanowires JS Wright, W Lim, BP Gila, SJ Pearton, JL Johnson, A Ural, F Ren
Sensors and Actuators B: Chemical 140 (1), 196-199, 2009
99 2009 Nitride and oxide semiconductor nanostructured hydrogen gas sensors JS Wright, W Lim, DP Norton, SJ Pearton, F Ren, JL Johnson, A Ural
Semiconductor Science and Technology 25 (2), 024002, 2010
97 2010 Low-voltage indium gallium zinc oxide thin film transistors on paper substrates W Lim, EA Douglas, DP Norton, SJ Pearton, F Ren, YW Heo, SY Son, ...
Applied Physics Letters 96 (5), 053510, 2010
91 2010 Stable room temperature deposited amorphous W Lim, SH Kim, YL Wang, JW Lee, DP Norton, SJ Pearton, F Ren, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008
85 2008 Temperature dependence of current-voltage characteristics of Ni–AlGaN/GaN Schottky diodes W Lim, JH Jeong, JH Lee, SB Hur, JK Ryu, KS Kim, TH Kim, SY Song, ...
Applied Physics Letters 97 (24), 242103, 2010
63 2010 ZnO and related materials for sensors and light-emitting diodes SJ Pearton, WT Lim, JS Wright, LC Tien, HS Kim, DP Norton, HT Wang, ...
Journal of Electronic Materials 37, 1426-1432, 2008
62 2008 Growth and characterization of GaN nanowires for hydrogen sensors JL Johnson, Y Choi, A Ural, W Lim, JS Wright, BP Gila, F Ren, SJ Pearton
Journal of electronic materials 38, 490-494, 2009
53 2009 Localized surface plasmon-enhanced near-ultraviolet emission from InGaN/GaN light-emitting diodes using silver and platinum nanoparticles SH Hong, CY Cho, SJ Lee, SY Yim, W Lim, ST Kim, SJ Park
Optics express 21 (3), 3138-3144, 2013
51 2013 Light source module, display panel, and display apparatus including the same NG Cha, YII Kim, WT Lim
US Patent 9,825,014, 2017
49 2017 Low-temperature-fabricated W Lim, EA Douglas, SH Kim, DP Norton, SJ Pearton, F Ren, H Shen, ...
Applied Physics Letters 93 (25), 252103, 2008
47 2008 Light-emitting diode (LED), LED package and apparatus including the same H Yoo, YI Kim, NG Cha, W Lim, KW Hwang, S Sim, H Noh
US Patent 9,799,809, 2017
44 2017 Light emitting device package YI Kim, HS Won, WT Lim, NG Cha
US Patent 10,230,021, 2019
43 2019 Improvement in bias stability of amorphous- W Lim, EA Douglas, DP Norton, SJ Pearton, F Ren, YW Heo, SY Son, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2010
43 2010 