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Hisham Massoud
Hisham Massoud
Duke University - Dept of Elec and Comp Eng
Bestätigte E-Mail-Adresse bei ee.duke.edu
Titel
Zitiert von
Zitiert von
Jahr
Thermal Oxidation of Silicon in Dry Oxygen Growth‐Rate Enhancement in the Thin Regime: I. Experimental Results
HZ Massoud, JD Plummer, EA Irene
Journal of the electrochemical society 132 (11), 2685, 1985
4411985
Electron trapping in SiO2 at 295 and 77 °K
DR Young, EA Irene, DJ DiMaria, RF De Keersmaecker, HZ Massoud
Journal of Applied Physics 50 (10), 6366-6372, 1979
3101979
Thermal oxidation of silicon in dry oxygen: accurate determination of the kinetic rate constants
HZ Massoud, JD Plummer, EA Irene
Journal of the Electrochemical Society 132 (7), 1745, 1985
2591985
Thermal Oxidation of Silicon in Dry Oxygen: Growth‐Rate Enhancement in the Thin Regime: II. Physical Mechanisms
HZ Massoud, JD Plummer, EA Irene
Journal of The Electrochemical Society 132 (11), 2693, 1985
2101985
Causes and prevention of temperature-dependent bubbles in silicon wafer bonding
K Mitani, V Lehmann, R Stengl, D Feijoo, UMGUM Gösele, ...
Japanese journal of applied physics 30 (4R), 615, 1991
1531991
Silicon oxidation studies: Silicon orientation effects on thermal oxidation
EA Irene, HZ Massoud, E Tierney
Journal of the Electrochemical Society 133 (6), 1253, 1986
1321986
The effect of ion-implantation damage on dopant diffusion in silicon during shallow-junction formation
Y Kim, HZ Massoud, RB Fair
Journal of electronic materials 18, 143-150, 1989
1091989
Measurement and modeling of charge feedthrough in n-channel MOS analog switches
WB Wilson, HZ Massoud, EJ Swanson, RT George, RB Fair
IEEE journal of solid-state circuits 20 (6), 1206-1213, 1985
1091985
Analytical relationship for the oxidation of silicon in dry oxygen in the thin‐film regime
HZ Massoud, JD Plummer
Journal of applied physics 62 (8), 3416-3423, 1987
981987
An investigation of Si‐SiO2 interface charges in thermally oxidized (100), (110), (111), and (511) silicon
SC Vitkavage, EA Irene, HZ Massoud
Journal of applied physics 68 (10), 5262-5272, 1990
751990
Charge‐transfer dipole moments at the Si–SiO2 interface
HZ Massoud
Journal of applied physics 63 (6), 2000-2005, 1988
691988
Rigid and flexible thin-film multielectrode arrays for transmural cardiac recording
JJ Mastrototaro, HZ Massoud, TC Pilkington, RE Ideker
IEEE transactions on biomedical engineering 39 (3), 271-279, 1992
501992
Method and apparatus for real-time wafer temperature and thin film growth measurement and control in a lamp-heated rapid thermal processor
HZ Massoud, RK Sampson
US Patent 5,313,044, 1994
481994
The spectral grid method: a novel fast Schrodinger-equation solver for semiconductor nanodevice simulation
QH Liu, C Cheng, HZ Massoud
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2004
362004
Spectral element method for the Schrödinger-Poisson system
C Cheng, QH Liu, JH Lee, HZ Massoud
Journal of Computational Electronics 3, 417-421, 2004
342004
Manufacturability of rapid-thermal oxidation of silicon: oxide thickness, oxide thickness variation, and system dependency
R Deaton, HZ Massoud
IEEE transactions on semiconductor manufacturing 5 (4), 347-358, 1992
341992
The onset of the thermal oxidation of silicon from room temperature to 1000 C
HZ Massoud
Microelectronic Engineering 28 (1-4), 109-116, 1995
331995
Extraction of the gate oxide thickness of N-and P-Channel MOSFETs below 20/spl Aring/from the substrate current resulting from valence-band electron tunneling
A Shanware, JP Shiely, HZ Massoud, E Vogel, K Henson, A Srivastava, ...
International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999
301999
Thermal oxidation of silicon in the ultrathin regime
HZ Massoud
Solid-State Electronics 41 (7), 929-934, 1997
301997
Effect of thermally induced stresses on the rapid‐thermal oxidation of silicon
R Deaton, HZ Massoud
Journal of applied physics 70 (7), 3588-3592, 1991
301991
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