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Armando Rastelli
Armando Rastelli
Professor of Semiconductor Physics, Johannes Kepler University Linz
Bestätigte E-Mail-Adresse bei jku.at - Startseite
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Zitiert von
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Precise control of thermal conductivity at the nanoscale through individual phonon-scattering barriers
G Pernot, M Stoffel, I Savic, F Pezzoli, P Chen, G Savelli, A Jacquot, ...
Nature materials 9 (6), 491-495, 2010
4292010
Stretchable graphene: a close look at fundamental parameters through biaxial straining
F Ding, H Ji, Y Chen, A Herklotz, K Dörr, Y Mei, A Rastelli, OG Schmidt
Nano letters 10 (9), 3453-3458, 2010
3982010
A solid-state source of strongly entangled photon pairs with high brightness and indistinguishability
J Liu, R Su, Y Wei, B Yao, SFC Silva, Y Yu, J Iles-Smith, K Srinivasan, ...
Nature nanotechnology 14 (6), 586-593, 2019
3322019
Triggered polarization-entangled photon pairs from a single quantum dot up to 30 K
R Hafenbrak, SM Ulrich, P Michler, L Wang, A Rastelli, OG Schmidt
New Journal of Physics 9 (9), 315, 2007
3012007
Highly indistinguishable and strongly entangled photons from symmetric GaAs quantum dots
D Huber, M Reindl, Y Huo, H Huang, JS Wildmann, OG Schmidt, ...
Nature communications 8 (1), 15506, 2017
2732017
On-demand generation of background-free single photons from a solid-state source
L Schweickert, KD Jöns, KD Zeuner, SF Covre da Silva, H Huang, ...
Applied Physics Letters 112 (9), 2018
2602018
Reversible shape evolution of Ge islands on Si (001)
A Rastelli, M Kummer, H Von Känel
Physical Review Letters 87 (25), 256101, 2001
235*2001
Advanced quantum dot configurations
S Kiravittaya, A Rastelli, OG Schmidt
Reports on Progress in Physics 72 (4), 046502, 2009
2322009
Barrierless formation and faceting of SiGe islands on Si (001)
J Tersoff, BJ Spencer, A Rastelli, H Von Känel
Physical review letters 89 (19), 196104, 2002
2252002
Universal recovery of the energy-level degeneracy of bright excitons in InGaAs quantum dots without a structure symmetry
R Trotta, E Zallo, C Ortix, P Atkinson, JD Plumhof, J Van den Brink, ...
Physical review letters 109 (14), 147401, 2012
2232012
Tuning the Exciton Binding Energies in Single Self-Assembled Quantum Dots by Piezoelectric-Induced Biaxial Stress
F Ding, R Singh, JD Plumhof, T Zander, V Křápek, YH Chen, M Benyoucef, ...
Physical review letters 104 (6), 067405, 2010
2162010
Quantum light emission of two lateral tunnel-coupled (In, Ga) As/GaAs quantum dots controlled by a tunable static electric field
GJ Beirne, C Hermannstädter, L Wang, A Rastelli, OG Schmidt, P Michler
Physical review letters 96 (13), 137401, 2006
2072006
Reversible Shape Evolution of Ge Islands on Si (001)
A Rastelli, M Kummer, H Kanel
Physical Review Letters 87 (25), 256101-256101, 2001
2032001
Hybrid superconductor–semiconductor devices made from self-assembled SiGe nanocrystals on silicon
G Katsaros, P Spathis, M Stoffel, F Fournel, M Mongillo, V Bouchiat, ...
Nature nanotechnology 5 (6), 458-464, 2010
1982010
Strain-tunable GaAs quantum dot: A nearly dephasing-free source of entangled photon pairs on demand
D Huber, M Reindl, SFC Da Silva, C Schimpf, J Martín-Sánchez, H Huang, ...
Physical review letters 121 (3), 033902, 2018
1932018
Hierarchical self-assembly of GaAs/AlGaAs quantum dots
A Rastelli, S Stufler, A Schliwa, R Songmuang, C Manzano, G Costantini, ...
Physical review letters 92 (16), 166104, 2004
1882004
Limits on dark matter WIMPs using upward-going muons in the MACRO detector
M Ambrosio, R Antolini, C Aramo, G Auriemma, A Baldini, GC Barbarino, ...
Physical Review D 60 (8), 082002, 1999
1781999
Hybrid semiconductor-atomic interface: slowing down single photons from a quantum dot
N Akopian, L Wang, A Rastelli, OG Schmidt, V Zwiller
Nature Photonics 5 (4), 230-233, 2011
1742011
Interplay between Thermodynamics and Kinetics in the Capping of Quantum Dots
G Costantini, A Rastelli, C Manzano, P Acosta-Diaz, R Songmuang, ...
Physical review letters 96 (22), 226106, 2006
1732006
Droplet epitaxy of semiconductor nanostructures for quantum photonic devices
M Gurioli, Z Wang, A Rastelli, T Kuroda, S Sanguinetti
Nature materials 18 (8), 799-810, 2019
1712019
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