Toward Low-Temperature Solid-Source Synthesis of Monolayer MoS2 A Tang, A Kumar, M Jaikissoon, K Saraswat, HSP Wong, E Pop
ACS Applied Materials & Interfaces 13 (35), 41866-41874, 2021
30 2021 Fast-response flexible temperature sensors with atomically thin molybdenum disulfide A Daus, M Jaikissoon, AI Khan, A Kumar, RW Grady, KC Saraswat, E Pop
Nano Letters 22 (15), 6135-6140, 2022
24 2022 Growth and characterization of epitaxial aluminum layers on gallium-arsenide substrates for superconducting quantum bits J Tournet, D Gosselink, GX Miao, M Jaikissoon, D Langenberg, ...
Superconductor Science and Technology 29 (6), 064004, 2016
11 2016 Temperature monitoring of narrow bandgap semiconductors MC Tam, Y Shi, D Gosselink, M Jaikissoon, ZR Wasilewski
Journal of Vacuum Science & Technology B 35 (2), 2017
8 2017 Imaging the electron charge density in monolayer MoS2 at the Ångstrom scale J Martis, S Susarla, A Rayabharam, C Su, T Paule, P Pelz, C Huff, X Xu, ...
Nature communications 14 (1), 4363, 2023
6 2023 Mobility Enhancement of Monolayer MoS2 Transistors using Tensile-Stressed Silicon Nitride Capping Layers M Jaikissoon, JA Yang, KM Neilson, E Pop, KC Saraswat
2022 Device Research Conference (DRC), 1-2, 2022
3 2022 3D-stacked strained SiGe/Ge gate-all-around (GAA) structure fabricated by 3D Ge condensation J Suh, AC Meng, M Jaikissoon, M Braun, TR Kim, AF Marshall, A Pakzad, ...
2019 Device Research Conference (DRC), 249-250, 2019
3 2019 Lithographic Damage to Two Dimensional Materials Probed by Photoluminescence and Raman Spectroscopy K Neilson, M Tie, JS Ko, M Jaikissoon, J Yang, R Chen, A Majumdar, ...
APS March Meeting Abstracts 2023, D34. 014, 2023
1 2023 Contact-induced Strain for Enhanced Performance in Monolayer WS2 Transistors L Hoang, M Jaikissoon, Z Zhang, K Saraswat, E Pop, A Mannix
Bulletin of the American Physical Society, 2024
2024 Ultrathin Gate Dielectric Enabled by Nanofog Aluminum Oxide on Monolayer MoS2 JS Ko, Z Zhang, S Lee, M Jaikissoon, RKA Bennett, K Kim, AC Kummel, ...
ESSDERC 2023-IEEE 53rd European Solid-State Device Research Conference …, 2023
2023 Local Back-Gate Monolayer MoS2 Transistors with Channel Lengths Down to 50 nm and EOT ∼ 1 nm Showing Improved using Post-Metal Anneal M Jaikissoon, JS Ko, E Pop, KC Saraswat
2023 Device Research Conference (DRC), 1-2, 2023
2023 Growth of single-crystal Al layers on GaAs and Si substrates for microwave superconducting resonators J Tournet, D Gosselink, M Jaikissoon, GX Miao, D Langenberg, ...
APS March Meeting Abstracts 2016, G1. 271, 2016
2016