Yandong Ma (马衍东)
Yandong Ma (马衍东)
Bestätigte E-Mail-Adresse bei sdu.edu.cn
Zitiert von
Zitiert von
Oxygen vacancy induced band-gap narrowing and enhanced visible light photocatalytic activity of ZnO
J Wang, Z Wang, B Huang, Y Ma, Y Liu, X Qin, X Zhang, Y Dai
ACS applied materials & interfaces 4 (8), 4024-4030, 2012
Evidence of the Existence of Magnetism in Pristine VX2 Monolayers (X = S, Se) and Their Strain-Induced Tunable Magnetic Properties
Y Ma, Y Dai, M Guo, C Niu, Y Zhu, B Huang
ACS nano 6 (2), 1695-1701, 2012
Electronic and magnetic properties of perfect, vacancy-doped, and nonmetal adsorbed MoSe 2, MoTe 2 and WS 2 monolayers
Y Ma, Y Dai, M Guo, C Niu, J Lu, B Huang
Physical Chemistry Chemical Physics 13 (34), 15546-15553, 2011
Graphene adhesion on MoS 2 monolayer: an ab initio study
Y Ma, Y Dai, M Guo, C Niu, B Huang
Nanoscale 3 (9), 3883-3887, 2011
Ab Initio Prediction and Characterization of Mo2C Monolayer as Anodes for Lithium-Ion and Sodium-Ion Batteries
Q Sun, Y Dai, Y Ma, T Jing, W Wei, B Huang
The journal of physical chemistry letters 7 (6), 937-943, 2016
Antimonene Oxides: Emerging Tunable Direct Bandgap Semiconductor and Novel Topological Insulator
S Zhang, W Zhou, Y Ma, J Ji, B Cai, SA Yang, Z Zhu, Z Chen, H Zeng
Nano Letters 17 (6), 3434–3440, 2017
Structural and electronic properties of layered arsenic and antimony arsenide
L Kou, Y Ma, X Tan, T Frauenheim, A Du, S Smith
The Journal of Physical Chemistry C 119 (12), 6918-6922, 2015
GeP3: A Small Indirect Band Gap 2D Crystal with High Carrier Mobility and Strong Interlayer Quantum Confinement
Y Jing, Y Ma, Y Li, T Heine
Nano letters 17 (3), 1833-1838, 2017
Tunable electronic and dielectric behavior of GaS and GaSe monolayers
Y Ma, Y Dai, M Guo, L Yu, B Huang
Physical Chemistry Chemical Physics 15 (19), 7098-7105, 2013
Robust Two-Dimensional Topological Insulators in Methyl-Functionalized Bismuth, Antimony and Lead Bilayer Films
Y Ma, Y Dai, L Kou, T Frauenheim, T Heine
Nano letters 15 (2), 1083–1089, 2015
Quantum spin hall insulators in strain-modified arsenene
H Zhang, Y Ma, Z Chen
Nanoscale 7 (45), 19152-19159, 2015
Semiconductor-topological insulator transition of two-dimensional SbAs induced by biaxial tensile strain
S Zhang, M Xie, B Cai, H Zhang, Y Ma, Z Chen, Z Zhu, Z Hu, H Zeng
Physical Review B 93 (24), 245303, 2016
Graphene/gC 3 N 4 bilayer: considerable band gap opening and effective band structure engineering
X Li, Y Dai, Y Ma, S Han, B Huang
Physical Chemistry Chemical Physics 16 (9), 4230-4235, 2014
First-Principles Study of the Graphene@MoSe2 Heterobilayers
Y Ma, Y Dai, W Wei, C Niu, L Yu, B Huang
The Journal of Physical Chemistry C 115 (41), 20237-20241, 2011
Quantum Spin Hall Effect and Topological Phase Transition in Two-Dimensional Square Transition Metal Dichalcogenides
Y Ma, L Kou, X Li, Y Dai, SC Smith, T Heine
Phys. Rev. B 92, 085427, 2015
Graphene-diamond interface: Gap opening and electronic spin injection
Y Ma, Y Dai, M Guo, B Huang
Physical Review B 85 (23), 235448, 2012
Strain-induced magnetic transitions in half-fluorinated single layers of BN, GaN and graphene
Y Ma, Y Dai, M Guo, C Niu, L Yu, B Huang
Nanoscale 3 (5), 2301-2306, 2011
Auxetic and ferroelastic borophane: a novel 2D material with negative Possion’s ratio and switchable dirac transport channels
L Kou, Y Ma, C Tang, Z Sun, A Du, C Chen
Nano letters 16 (12), 7910-7914, 2016
Anisotropic Ripple Deformation in Phosphorene
L Kou, Y Ma, SC Smith, C Chen
The Journal of Physical Chemistry Letters 6, 1509–1513, 2015
Two-dimensional topological insulators: Progress and prospects
L Kou, Y Ma, Z Sun, T Heine, C Chen
The journal of physical chemistry letters 8 (8), 1905-1919, 2017
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