Michael Glavanovics
Michael Glavanovics
KAI Kompetenzzentrum Automobil- und Industrieelektronik
Verified email at k-ai.at - Homepage
Cited by
Cited by
Analysis of wire bond and metallization degradation mechanisms in DMOS power transistors stressed under thermal overload conditions.
T Detzel, M Glavanovics, K Weber
Microelectron. Reliab. 44 (9-11), 1485-1490, 2004
Thermal destruction testing: an indirect approach to a simple dynamic thermal model of smart power switches
M Glavanovics, H Zitta
Proceedings of the 27th European Solid-State Circuits Conference, 221-224, 2001
A reliable technology concept for active power cycling to extreme temperatures
M Nelhiebel, R Illing, C Schreiber, S Wöhlert, S Lanzerstorfer, M Ladurner, ...
Microelectronics Reliability 51 (9-11), 1927-1932, 2011
Impact of thermal overload operation on wirebond and metallization reliability in smart power devices
M Glavanovics, T Detzel, K Weber
Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat …, 2004
A new cycle test system emulating inductive switching waveforms
M Glavanovics, H Kock, H Eder, V Kosel, T Smorodin
2007 European Conference on Power Electronics and Applications, 1-9, 2007
Transient non-linear thermal FEM simulation of smart power switches and verification by measurements
V Kosel, R Sleik, M Glavanovics
2007 13th International Workshop on Thermal Investigation of ICs and Systems …, 2007
IR thermography and FEM simulation analysis of on-chip temperature during thermal-cycling power-metal reliability testing using in situ heated structures
H Köck, V Košel, C Djelassi, M Glavanovics, D Pogany
Microelectronics Reliability 49 (9-11), 1132-1136, 2009
Temperature sensor for a MOS circuit configuration
E Pihet, M Glavanovics, T Krotscheck, R Zelsacher
US Patent 6,948,847, 2005
Reliable smart power system ICs for automotive and industrial applications-the Infineon smart multichannel switch family
M Glavanovics, H Estl, A Bachofner
Proceedings of PCIM Europe, 1-6, 2001
Modeling of highly anisotropic microstructures for electro-thermal simulations of power semiconductor devices
S de Filippis, H Köck, M Nelhiebel, V Košel, S Decker, M Glavanovics, ...
Microelectronics Reliability 52 (9-10), 2374-2379, 2012
Power-cycling of DMOS-switches triggers thermo-mechanical failure mechanisms
T Smorodin, M Stecher, M Glavanovics, J Wilde
ESSDERC 2007-37th European Solid State Device Research Conference, 139-142, 2007
Flexible active cycle stress testing of smart power switches
M Glavanovics, H Köck, V Košel, T Smorodin
Microelectronics Reliability 47 (9-11), 1790-1794, 2007
A bayesian mixture Coffin-Manson approach to predict semiconductor lifetime
O Bluder, J Pilz, M Glavanovics, K Plankensteiner
Proceedings of Stochastic Modeling Techniques and Data Analysis, 45-52, 2012
Non-linear thermal modeling of DMOS transistor and validation using electrical measurements and FEM simulations
V Košel, R Illing, M Glavanovics, A Šatka
Microelectronics journal 41 (12), 889-896, 2010
System level modeling of smart power switches using SystemC-AMS for digital protection concept verification
HP Kreuter, V Kosel, M Glavanovics, R Illing
2009 IEEE Behavioral Modeling and Simulation Workshop, 37-42, 2009
Thermal simulation and ultrafast IR temperature mapping of a Smart Power Switch for automotive applications
M Riccio, A Irace, G Breglio, P Spirito, V Kosel, M Glavanovics, A Satka
2009 21st International Symposium on Power Semiconductor Devices & IC's, 200-203, 2009
Cycle stress test equipment for automated short circuit testing of smart power switches according to the AEC Q100-012 standard
M Glavanovics, HP Kreuter, R Sleik, C Schreiber
2009 13th European Conference on Power Electronics and Applications, 1-7, 2009
Modular test system architecture for device, circuit and system level reliability testing
R Sleik, M Glavanovics, S Einspieler, A Muetze, K Krischan
2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 759-765, 2016
Improved thermal management of low voltage power devices with optimized bond wire positions
H Köck, C Djelassi, S de Filippis, R Illing, M Nelhiebel, M Ladurner, ...
Microelectronics Reliability 51 (9-11), 1913-1918, 2011
Multiscale FE modeling concepts applied to microelectronic device simulations
H Köck, S de Filippis, M Nelhiebel, M Glavanovics, M Kaltenbacher
2013 14th International Conference on Thermal, Mechanical and Multi-Physics …, 2013
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