Folgen
Na Ren
Na Ren
Bestätigte E-Mail-Adresse bei ucla.edu
Titel
Zitiert von
Zitiert von
Jahr
Design and Experimental Study of 4H-SiC Trenched Junction Barrier Schottky Diodes
R Na, W Jue, S Kuang
IEEE Transactions on Electron Devices 61 (7), 2014
832014
A SiC-based high power density single-phase inverter with in-series and in-parallel power decoupling method
X Lyu, N Ren, Y Li, D Cao
IEEE Journal of Emerging and Selected Topics in Power Electronics 4 (3), 893-901, 2016
772016
An Analytical Model With 2-D Effects for 4H-SiC Trenched Junction Barrier Schottky Diodes
R Na, S Kuang
IEEE Transactions on Electron Devices 61 (12), 2014
462014
Investigation on single pulse avalanche failure of SiC MOSFET and Si IGBT
N Ren, H Hu, X Lyu, J Wu, H Xu, R Li, Z Zuo, K Wang, K Sheng
Solid-State Electronics 152, 33-40, 2019
452019
A 10kV/200A SiC MOSFET module with series-parallel hybrid connection of 1200V/50A dies
Q Xiao, Y Yan, X Wu, N Ren, K Sheng
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015
422015
4H-SiC super-junction JFET: Design and experimental demonstration
H Wang, C Wang, B Wang, N Ren, K Sheng
IEEE Electron Device Letters 41 (3), 445-448, 2020
342020
1.2-kV 4H-SiC merged PiN Schottky diode with improved surge current capability
J Wu, N Ren, H Wang, K Sheng
IEEE Journal of Emerging and Selected Topics in Power Electronics 7 (3 …, 2019
312019
Failure mechanism analysis of SiC MOSFETs in unclamped inductive switching conditions
N Ren, KL Wang, J Wu, H Xu, K Sheng
2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019
312019
Optimization of high-density and high-efficiency switched-tank converter for data center applications
X Lyu, Y Li, N Ren, C Nan, D Cao, S Jiang
IEEE Transactions on Industrial Electronics 67 (2), 1626-1637, 2019
302019
A recent review on silicon carbide power devices technologies
K Sheng, N Ren, H Xu
Proceedings of the CSEE 40 (6), 1741-1753, 2020
282020
Investigation of 1200 V SiC MOSFETs’ surge reliability
H Li, J Wang, N Ren, H Xu, K Sheng
Micromachines 10 (7), 485, 2019
272019
Investigation on single pulse avalanche failure of 900V SiC MOSFETs
N Ren, H Hu, KL Wang, Z Zuo, R Li, K Sheng
2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018
272018
Accurate Analytical Switching-On Loss Model of SiC MOSFET Considering Dynamic Transfer Characteristic and Qgd
Z Dong, X Wu, H Xu, N Ren, K Sheng
IEEE Transactions on Power Electronics 35 (11), 12264-12273, 2020
262020
Investigation on Surge Current Capability of 4H-SiC Trench-Gate MOSFETs in Third Quadrant Under Various VGS Biases
Z Zhu, H Xu, L Liu, N Ren, K Sheng
IEEE Journal of Emerging and Selected Topics in Power Electronics 9 (5 …, 2020
202020
1200-V 4H-SiC merged pin Schottky diodes with high avalanche capability
L Liu, J Wu, N Ren, Q Guo, K Sheng
IEEE Transactions on Electron Devices 67 (9), 3679-3684, 2020
192020
Gate drive investigations of IGBT modules with SiC-Schottky freewheeling diodes
N Ren, K Sheng, J Zhang, F Peng
2013 IEEE Energy Conversion Congress and Exposition, 2871-2876, 2013
182013
Instantaneous pulse power compensator for high-density single-phase inverters
X Lyu, N Ren, D Cao
IEEE Transactions on Power Electronics 34 (11), 10776-10785, 2019
172019
A comparative study of switched-tank converter and cascaded voltage divider for 48-V data center application
X Lyu, Y Li, N Ren, S Jiang, D Cao
IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (2 …, 2019
162019
Potential of epoxy nanocomposites for packaging materials of high voltage power modules: a validation using experiments and simulation
X Chen, Q Wang, N Ren, C Dai, M Awais, A Paramane
IEEE Transactions on Dielectrics and Electrical Insulation 28 (6), 2161-2169, 2021
122021
A comparative study of silicon carbide merged PiN Schottky diodes with electrical-thermal coupled considerations
J Wu, N Ren, Q Guo, K Sheng
Materials 13 (11), 2669, 2020
122020
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20