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Toru Akiyama
Toru Akiyama
Bestätigte E-Mail-Adresse bei phen.mie-u.ac.jp
Titel
Zitiert von
Zitiert von
Jahr
Giant Modification of the Magnetocrystalline Anisotropy in Transition-Metal Monolayers<? format?> by an External Electric Field
K Nakamura, R Shimabukuro, Y Fujiwara, T Akiyama, T Ito, AJ Freeman
Physical review letters 102 (18), 187201, 2009
4422009
An empirical potential approach to wurtzite–zinc-blende polytypism in group III–V semiconductor nanowires
T Akiyama, K Sano, K Nakamura, T Ito
Japanese journal of applied physics 45 (3L), L275, 2006
2832006
Role of an interfacial FeO layer in the electric-field-driven switching of magnetocrystalline anisotropy at the Fe/MgO interface
K Nakamura, T Akiyama, T Ito, M Weinert, AJ Freeman
Physical Review B—Condensed Matter and Materials Physics 81 (22), 220409, 2010
2132010
Electric field effects on magnetocrystalline anisotropy in ferromagnetic Fe monolayers
R Shimabukuro, K Nakamura, T Akiyama, T Ito
Physica E: Low-dimensional Systems and Nanostructures 42 (4), 1014-1017, 2010
1872010
Structural stability and electronic structures of nanowires: Role of surface dangling bonds on nanowire facets
T Akiyama, K Nakamura, T Ito
Physical Review B—Condensed Matter and Materials Physics 73 (23), 235308, 2006
1422006
Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach
Y Kangawa, T Akiyama, T Ito, K Shiraishi, T Nakayama
Materials 6 (8), 3309-3360, 2013
1142013
Electric-field-induced modification of the magnon energy, exchange interaction, and Curie temperature of transition-metal thin films
M Oba, K Nakamura, T Akiyama, T Ito, M Weinert, AJ Freeman
Physical review letters 114 (10), 107202, 2015
642015
Surface reconstruction and magnesium incorporation on semipolar surfaces
T Akiyama, D Ammi, K Nakamura, T Ito
Physical Review B—Condensed Matter and Materials Physics 81 (24), 245317, 2010
542010
Band alignment tuning in twin-plane superlattices of semiconductor nanowires
T Akiyama, T Yamashita, K Nakamura, T Ito
Nano letters 10 (11), 4614-4618, 2010
532010
Reaction mechanisms of oxygen at SiO2/Si (1 0 0) interface
T Akiyama, H Kageshima
Surface science 576 (1-3), L65-L70, 2005
522005
First-principles investigations for oxidation reaction processes at 4H-SiC/SiO2 interface and its orientation dependence
T Akiyama, A Ito, K Nakamura, T Ito, H Kageshima, M Uematsu, ...
Surface Science 641, 174-179, 2015
502015
Stability of hydrogen on nonpolar and semipolar nitride surfaces: Role of surface orientation
T Akiyama, T Yamashita, K Nakamura, T Ito
Journal of crystal growth 318 (1), 79-83, 2011
482011
Constraint density functional calculations for multiplets in a ligand-field applied to Fe-phthalocyanine
K Nakamura, Y Kitaoka, T Akiyama, T Ito, M Weinert, AJ Freeman
Physical Review B—Condensed Matter and Materials Physics 85 (23), 235129, 2012
462012
Effect of heavy-metal insertions at Fe/MgO interfaces on electric-field-induced modification of magnetocrystalline anisotropy
K Nakamura, T Nomura, AM Pradipto, K Nawa, T Akiyama, T Ito
Journal of Magnetism and Magnetic Materials 429, 214-220, 2017
452017
Ab initio-based study for adatom kinetics on AlN (0001) surfaces during metal-organic vapor-phase epitaxy growth
T Akiyama, K Nakamura, T Ito
Applied Physics Letters 100 (25), 2012
402012
Origin of electric-field-induced modification of magnetocrystalline anisotropy at Fe (001) surfaces: Mechanism of dipole formation from first principles
K Nakamura, R Shimabukuro, T Akiyama, T Ito, AJ Freeman
Physical Review B—Condensed Matter and Materials Physics 80 (17), 172402, 2009
402009
A simple approach to polytypes of SiC and its application to nanowires
T Ito, K Sano, T Akiyama, K Nakamura
Thin Solid Films 508 (1-2), 243-246, 2006
372006
Modified approach for calculating individual energies of polar and semipolar surfaces of group-III nitrides
T Akiyama, Y Seta, K Nakamura, T Ito
Physical Review Materials 3 (2), 023401, 2019
362019
Atomic and electronic structures of CaCO surfaces
T Akiyama, K Nakamura, T Ito
Physical Review B—Condensed Matter and Materials Physics 84 (8), 085428, 2011
362011
Microscopic mechanism of interfacial reaction during Si oxidation
T Akiyama, H Kageshima
Applied surface science 216 (1-4), 270-274, 2003
362003
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