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Robin Jacobs-Gedrim
Robin Jacobs-Gedrim
Sandia National Labs
Bestätigte E-Mail-Adresse bei ncf.edu - Startseite
Titel
Zitiert von
Zitiert von
Jahr
Li-ion synaptic transistor for low power analog computing
EJ Fuller, FE Gabaly, F Léonard, S Agarwal, SJ Plimpton, ...
Advanced Materials 29 (SAND-2017-0895J), 2016
4992016
Defect-induced photoluminescence in monolayer semiconducting transition metal dichalcogenides
PK Chow, RB Jacobs-Gedrim, J Gao, TM Lu, B Yu, H Terrones, ...
ACS nano 9 (2), 1520-1527, 2015
4692015
Extraordinary Photoresponse in Two-Dimensional In2Se3 Nanosheets
RB Jacobs-Gedrim, M Shanmugam, N Jain, CA Durcan, MT Murphy, ...
ACS nano 8 (1), 514-521, 2014
4152014
Multiscale co-design analysis of energy, latency, area, and accuracy of a ReRAM analog neural training accelerator
MJ Marinella, S Agarwal, A Hsia, I Richter, R Jacobs-Gedrim, J Niroula, ...
IEEE Journal on Emerging and Selected Topics in Circuits and Systems 8 (1 …, 2018
1752018
Two-dimensional layered semiconductor/graphene heterostructures for solar photovoltaic applications
M Shanmugam, R Jacobs-Gedrim, ES Song, B Yu
Nanoscale 6 (21), 12682-12689, 2014
1302014
2D Layered Insulator Hexagonal Boron Nitride Enabled Surface Passivation in Dye Sensitized Solar Cell
BY Mariyappan Shanmugam, Robin Jacobs-Gedrim
Nanoscale, 2013
752013
Achieving ideal accuracies in analog neuromorphic computing using periodic carry
S Agarwal, RBJ Gedrim, AH Hsia, DR Hughart, EJ Fuller, AA Talin, ...
2017 Symposium on VLSI Technology, T174-T175, 2017
612017
Exploring carrier transport phenomena in a CVD-assembled graphene FET on hexagonal boron nitride
E Kim, N Jain, R Jacobs-Gedrim, Y Xu, B Yu
Nanotechnology 23 (12), 125706, 2012
502012
Using floating-gate memory to train ideal accuracy neural networks
S Agarwal, D Garland, J Niroula, RB Jacobs-Gedrim, A Hsia, ...
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 5 …, 2019
422019
Graphene interconnects fully encapsulated in layered insulator hexagonal boron nitride
N Jain, CA Durcan, R Jacobs-Gedrim, Y Xu, B Yu
Nanotechnology 24 (35), 355202, 2013
392013
Layered semiconductor tungsten disulfide: photoactive material in bulk heterojunction solar cells
M Shanmugam, CA Durcan, R Jacobs-Gedrim, B Yu
Nano Energy 2 (3), 419-424, 2013
352013
Impact of linearity and write noise of analog resistive memory devices in a neural algorithm accelerator
RB Jacobs-Gedrim, S Agarwal, KE Knisely, JE Stevens, ...
2017 IEEE International Conference on Rebooting Computing (ICRC), 1-10, 2017
292017
Energy and performance benchmarking of a domain wall-magnetic tunnel junction multibit adder
TP Xiao, CH Bennett, X Hu, B Feinberg, R Jacobs-Gedrim, S Agarwal, ...
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 5 …, 2019
262019
Ziksa: On-chip learning accelerator with memristor crossbars for multilevel neural networks
AM Zyarah, N Soures, L Hays, RB Jacobs-Gedrim, S Agarwal, ...
2017 IEEE International Symposium on Circuits and Systems (ISCAS), 1-4, 2017
262017
Synthesis of few-to-monolayer graphene on rutile titanium dioxide
T Bansal, CA Durcan, N Jain, RB Jacobs-Gedrim, Y Xu, B Yu
Carbon 55, 168-175, 2013
262013
Reversible phase-change behavior in two-dimensional antimony telluride (Sb2Te3) nanosheets
RB Jacobs-Gedrim, MT Murphy, F Yang, N Jain, M Shanmugam, ES Song, ...
Applied Physics Letters 112 (13), 2018
242018
Irradiation effects on perpendicular anisotropy spin–orbit torque magnetic tunnel junctions
M Alamdar, LJ Chang, K Jarvis, P Kotula, C Cui, R Gearba-Dolocan, Y Liu, ...
IEEE Transactions on Nuclear Science 68 (5), 665-670, 2021
192021
ACS Nano 9, 1520 (2015)
PK Chow, RB Jacobs-Gedrim, J Gao, TM Lu, B Yu, H Terrones, ...
V. Carozo, Y. Wang, K. Fujisawa, B. Carvalho, A. McCreary, S. Feng, Z. Lin …, 2017
162017
Layered insulator hexagonal boron nitride for surface passivation in quantum dot solar cell
BY Mariyappan Shanmugam, Nikhil Jain, Robin Jacobs
Appl. Phys. Lett. 103 (243904), 2013
152013
ROSS SIM
S Agarwal, SJ Plimpton, RL Schiek, I Richter, AH Hsia, DR Hughart, ...
142017
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