Enhancement-mode n-channel GaN MOSFETs on p and n-GaN/sapphire substrates W Huang, T Khan, TP Chow 2006 IEEE International Symposium on Power Semiconductor Devices and IC's, 1-4, 2006 | 191 | 2006 |
Comparison of MOS capacitors on n-and p-type GaN W Huang, T Khan, T Paul Chow Journal of electronic materials 35, 726-732, 2006 | 89 | 2006 |
The effect of gate oxide processes on the performance of 4H-SiC MOSFETs and gate-controlled diodes Y Wang, K Tang, T Khan, MK Balasubramanian, H Naik, W Wang, ... IEEE transactions on electron devices 55 (8), 2046-2053, 2008 | 64 | 2008 |
Semiconductor device with increased snapback voltage BH Grote, VK Khemka, TA Khan, W Huang, R Zhu US Patent 8,193,585, 2012 | 42 | 2012 |
Methods of making laterally double diffused metal oxide semiconductor transistors having a reduced surface field structure BH Grote, TA Khan, VK Khemka, R Zhu US Patent 8,623,732, 2014 | 30 | 2014 |
Guard ring integrated LDMOS VK Khemka, SJ Cosentino, TA Khan, AC Reyes, R Zhu US Patent 8,278,710, 2012 | 26 | 2012 |
MOS capacitor structures TA Khan, A Bose, VK Khemka, R Zhu US Patent 8,134,222, 2012 | 26 | 2012 |
Semiconductor device and method VK Khemka, TA Khan, W Huang, R Zhu US Patent 8,344,472, 2013 | 23 | 2013 |
Electronic device with capcitively coupled floating buried layer VK Khemka, TA Khan, R Zhu, W Huang, BH Grote US Patent 8,338,872, 2012 | 21 | 2012 |
LDMOS with enhanced safe operating area (SOA) and method therefor TA Khan, VK Khemka, R Zhu US Patent 8,330,220, 2012 | 18 | 2012 |
Semiconductor device and related manufacturing method TA Khan, BH Grote, VK Khemka, R Zhu US Patent App. 12/882,899, 2012 | 16 | 2012 |
A high voltage Super-Junction NLDMOS device implemented in 0.13 µm SOI based Smart Power IC technology R Zhu, V Khemka, T Khan, W Huang, X Cheng, P Hui, M Ger, P Rodriquez 2010 22nd International Symposium on Power Semiconductor Devices & IC's …, 2010 | 16 | 2010 |
Rugged dotted-channel LDMOS structure T Khan, V Khemka, R Zhu, A Bose 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 14 | 2008 |
Combined lateral vertical RESURF (CLAVER) LDMOS structure T Khan, V Khemka, R Zhu, W Huang, X Cheng, P Hui, M Ger, B Grote, ... 2009 21st International Symposium on Power Semiconductor Devices & IC's, 13-16, 2009 | 12 | 2009 |
Robust deep trench isolation V Khemka, A Bose, MC Butner, BH Grote, TA Khan, S Shen, R Zhu US Patent 7,608,908, 2009 | 10 | 2009 |
Experimental demonstration of enhancement mode GaN MOSFETs W Huang, TP Chow, T Khan physica status solidi (a) 204 (6), 2064-2067, 2007 | 8 | 2007 |
Integrated MOS power transistor with body extension region for poly field plate depletion assist V Khemka, R Zhu, TA Khan, BH Grote US Patent 8,969,958, 2015 | 7 | 2015 |
Asymmetric interface densities on n and p type GaN MOS capacitors W Huang, T Khan, TP Chow Materials science forum 527, 1525-1528, 2006 | 7 | 2006 |
Integrated MOS power transistor with poly field plate extension for depletion assist V Khemka, R Zhu, TA Khan, BH Grote US Patent 8,963,241, 2015 | 6 | 2015 |
Optimization of 4H-SiC MOS properties with cesium implantation Y Wang, T Khan, TP Chow Materials Science Forum 600, 751-754, 2009 | 6 | 2009 |