GaN: Processing, defects, and devices SJ Pearton, JC Zolper, RJ Shul, F Ren
Journal of applied physics 86 (1), 1-78, 1999
2234 1999 A review of Ga2 O3 materials, processing, and devices SJ Pearton, J Yang, PH Cary IV, F Ren, J Kim, MJ Tadjer, MA Mastro
Applied Physics Reviews 5 (1), 011301, 2018
1661 2018 Wide band gap ferromagnetic semiconductors and oxides SJ Pearton, CR Abernathy, ME Overberg, GT Thaler, DP Norton, ...
Journal of Applied Physics 93 (1), 1-13, 2003
1177 2003 ZnO nanowire growth and devices YW Heo, DP Norton, LC Tien, Y Kwon, BS Kang, F Ren, SJ Pearton, ...
Materials Science and Engineering: R: Reports 47 (1-2), 1-47, 2004
750 2004 The Mg-chelatase H subunit is an abscisic acid receptor YY Shen, XF Wang, FQ Wu, SY Du, Z Cao, Y Shang, XL Wang, CC Peng, ...
Nature 443 (7113), 823-826, 2006
707 2006 Hydrogen-selective sensing at room temperature with ZnO nanorods HT Wang, BS Kang, F Ren, LC Tien, PW Sadik, DP Norton, SJ Pearton, ...
Applied Physics Letters 86 (24), 243503, 2005
686 2005 Two Calcium-Dependent Protein Kinases, CPK4 and CPK11, Regulate Abscisic Acid Signal Transduction in Arabidopsis SY Zhu, XC Yu, XJ Wang, R Zhao, Y Li, RC Fan, Y Shang, SY Du, ...
The Plant Cell 19 (10), 3019-3036, 2007
627 2007 Fabrication and performance of GaN electronic devices SJ Pearton, F Ren, AP Zhang, KP Lee
Materials Science and Engineering: R: Reports 30 (3-6), 55-212, 2000
624 2000 Site-specific growth of ZnO nanorods using catalysis-driven molecular-beam epitaxy YW Heo, V Varadarajan, M Kaufman, K Kim, DP Norton, F Ren, ...
Applied physics letters 81 (16), 3046-3048, 2002
469 2002 Magnetic properties of n -GaMnN thin films GT Thaler, ME Overberg, B Gila, R Frazier, CR Abernathy, SJ Pearton, ...
Applied Physics Letters 80 (21), 3964-3966, 2002
448 2002 GaN-based diodes and transistors for chemical, gas, biological and pressure sensing SJ Pearton, BS Kang, S Kim, F Ren, BP Gila, CR Abernathy, J Lin, ...
Journal of Physics: Condensed Matter 16 (29), R961, 2004
414 2004 Perspective: Ga2 O3 for ultra-high power rectifiers and MOSFETS SJ Pearton, F Ren, M Tadjer, J Kim
Journal of Applied Physics 124 (22), 220901, 2018
387 2018 Perspective—opportunities and future directions for Ga2O3 MA Mastro, A Kuramata, J Calkins, J Kim, F Ren, SJ Pearton
ECS Journal of Solid State Science and Technology 6 (5), P356, 2017
361 2017 A shift of phloem unloading from symplasmic to apoplasmic pathway is involved in developmental onset of ripening in grape berry XY Zhang, XL Wang, XF Wang, GH Xia, QH Pan, RC Fan, FQ Wu, XC Yu, ...
Plant physiology 142 (1), 220-232, 2006
360 2006 Hydrogen sensing at room temperature with Pt-coated ZnO thin films and nanorods LC Tien, PW Sadik, DP Norton, LF Voss, SJ Pearton, HT Wang, BS Kang, ...
Applied Physics Letters 87 (22), 222106, 2005
344 2005 Depletion-mode YW Heo, LC Tien, Y Kwon, DP Norton, SJ Pearton, BS Kang, F Ren
Applied Physics Letters 85 (12), 2274-2276, 2004
328 2004 A survey of ohmic contacts to III-V compound semiconductors AG Baca, F Ren, JC Zolper, RD Briggs, SJ Pearton
Thin Solid Films 308, 599-606, 1997
313 1997 Recent advances in wide bandgap semiconductor biological and gas sensors SJ Pearton, F Ren, YL Wang, BH Chu, KH Chen, CY Chang, W Lim, J Lin, ...
Progress in Materials Science 55 (1), 1-59, 2010
298 2010 Ionizing radiation damage effects on GaN devices SJ Pearton, F Ren, E Patrick, ME Law, AY Polyakov
ECS Journal of solid state science and technology 5 (2), Q35, 2015
277 2015 Effect of temperature on F Ren, M Hong, SNG Chu, MA Marcus, MJ Schurman, A Baca, SJ Pearton, ...
Applied Physics Letters 73 (26), 3893-3895, 1998
277 1998 
Stephen PeartonProfessor of Materials Science and Engineering, University of FloridaBestätigte E-Mail-Adresse bei mse.ufl.edu
