| Transfer learning-based artificial intelligence-integrated physical modeling to enable failure analysis for 3 nanometer and smaller silicon-based CMOS transistors J Pan, KL Low, J Ghosh, S Jayavelu, MM Ferdaus, SY Lim, E Zamburg, ... ACS Applied Nano Materials 4 (7), 6903-6915, 2021 | 31 | 2021 |
| A study of electrical characteristics of Gd2O3/GaN and Gd2O3/AlGaN/GaN MOS Heterostructures J Ghosh, S Das, S Mukherjee, S Ganguly, A Laha Microelectronic Engineering 216, 111097, 2019 | 17 | 2019 |
| Physical insights into vacancy-based memtransistors: toward power efficiency, reliable operation, and scalability M Sivan, JF Leong, J Ghosh, B Tang, J Pan, E Zamburg, AVY Thean ACS nano 16 (9), 14308-14322, 2022 | 15 | 2022 |
| Modelling of multipurpose spintronic devices T Windbacher, J Ghosh, A Makarov, V Sverdlov, S Selberherr International Journal of Nanotechnology 12 (3-4), 313-331, 2015 | 13 | 2015 |
| Intersubband spin relaxation reduction and spin lifetime enhancement by strain in SOI structures J Ghosh, D Osintsev, V Sverdlov, S Selberherr Microelectronic Engineering 147, 89-91, 2015 | 12 | 2015 |
| Temperature dependent variability analysis of threshold voltage and on-current for optimum switching performance by Gallium Nitride-based junctionless FinFET S Mukherjee, S Dutta, J Ghosh, D Saha, A Laha, S Ganguly 2019 Electron Devices Technology and Manufacturing Conference (EDTM), 118-120, 2019 | 11 | 2019 |
| Spin injection in a semiconductor through a space-charge layer J Ghosh, T Windbacher, V Sverdlov, S Selberherr Solid-state electronics 101, 116-121, 2014 | 11 | 2014 |
| Spin injection and diffusion in silicon based devices from a space charge layer J Ghosh, V Sverdlov, T Windbacher, S Selberherr Journal of Applied Physics 115, 17C503, 2014 | 11 | 2014 |
| Significance of activation functions in developing an online classifier for semiconductor defect detection MM Ferdaus, B Zhou, JW Yoon, KL Low, J Pan, J Ghosh, M Wu, X Li, ... Knowledge-Based Systems 248, 108818, 2022 | 10 | 2022 |
| Modeling and simulation of AlGaN/InGaN/GaN double heterostructures using distributed surface donor states J Ghosh, S Ganguly Japanese Journal of Applied Physics 57 (8), 080305, 2018 | 10 | 2018 |
| Dependence of spin lifetime on spin injection orientation in strained silicon films J Ghosh, D Osintsev, V Sverdlov, S Selberherr EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and …, 2015 | 8 | 2015 |
| Modeling the effect of the two-dimensional hole gas in a GaN/AlGaN/GaN heterostructure J Ghosh, A Laha, D Saha, S Ganguly Ultimate Integration on Silicon (EUROSOI-ULIS), 2017 Joint International …, 2017 | 7 | 2017 |
| CMOS-compatible spintronic devices V Sverdlov, J Ghosh, A Makarov, T Windbacher, S Selberherr 2015 30th Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2015 | 7 | 2015 |
| Efficient ab initio plus analytic calculation of the effect of GaN layer tensile strain in AlGaN/GaN heterostructures M Date, S Mukherjee, J Ghosh, D Saha, S Ganguly, A Laha, P Ghosh Japanese Journal of Applied Physics 58 (9), 094001, 2019 | 6 | 2019 |
| Innovative use of TCAD process simulation for device failure analysis SY Lim, J Ghosh, A Thean 2021 IEEE International Symposium on the Physical and Failure Analysis of …, 2021 | 5 | 2021 |
| Charge density and bare surface barrier height in GaN/AlGaN/GaN heterostructures: A modeling and simulation study J Ghosh, D Saha, S Ganguly, A Laha International Journal of RF and Microwave Computer‐Aided Engineering 28 (8 …, 2018 | 5 | 2018 |
| Variation of spin lifetime with spin injection orientation in strained thin silicon films J Ghosh, D Osintsev, V Sverdlov, S Selberherr ECS Transactions 66 (5), 233, 2015 | 5 | 2015 |
| Bridge-defect prediction in SRAM circuits using random forest, XGBoost, and LightGBM learners J Ghosh, SY Lim, AVY Thean 2021 International Conference on Simulation of Semiconductor Processes and …, 2021 | 3 | 2021 |
| Modeling charge density in AlGaN/AlN/InGaN/GaN-based double heterostructures including InGaN layer strain relaxation J Ghosh Journal of Physics Communications 2 (12), 125010, 2018 | 3 | 2018 |
| Analytical modeling of 2DEG and surface barrier height in GaN/AlGaN/GaN heterostructures J Ghosh, N Goyal, S Ganguly Proc. in Intl. Conf. of Emerg. Elect., 2016 | 3 | 2016 |
