Joydeep Ghosh
Joydeep Ghosh
NUS Singapore
No verified email
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Cited by
Cited by
Year
Intersubband spin relaxation reduction and spin lifetime enhancement by strain in SOI structures
J Ghosh, D Osintsev, V Sverdlov, S Selberherr
Microelectronic Engineering 147, 89-91, 2015
112015
Spin injection in a semiconductor through a space-charge layer
J Ghosh, T Windbacher, V Sverdlov, S Selberherr
Solid-state electronics 101, 116-121, 2014
102014
Spin injection and diffusion in silicon based devices from a space charge layer
J Ghosh, V Sverdlov, T Windbacher, S Selberherr
Journal of Applied Physics 115, 17C503, 2014
102014
Dependence of spin lifetime on spin injection orientation in strained silicon films
J Ghosh, D Osintsev, V Sverdlov, S Selberherr
EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and …, 2015
82015
Modelling of multipurpose spintronic devices
T Windbacher, J Ghosh, A Makarov, V Sverdlov, S Selberherr
International Journal of Nanotechnology 12 (3-4), 313-331, 2015
82015
Modeling and simulation of AlGaN/InGaN/GaN double heterostructures using distributed surface donor states
J Ghosh, S Ganguly
Japanese Journal of Applied Physics 57 (8), 080305, 2018
62018
Variation of spin lifetime with spin injection orientation in strained thin silicon films
J Ghosh, D Osintsev, V Sverdlov, S Selberherr
ECS Transactions 66 (5), 233, 2015
52015
Modeling the effect of the two-dimensional hole gas in a GaN/AlGaN/GaN heterostructure
J Ghosh, A Laha, D Saha, S Ganguly
Ultimate Integration on Silicon (EUROSOI-ULIS), 2017 Joint International …, 2017
32017
Analytical modeling of 2DEG and surface barrier height in GaN/AlGaN/GaN heterostructures
J Ghosh, N Goyal, S Ganguly
Proc. in Intl. Conf. of Emerg. Elect., 2016
32016
Enhancement of electron spin relaxation time in thin SOI films by spin injection orientation and uniaxial stress
J Ghosh, D Osintsev, V Sverdlov, S Selberherr
Journal of Nano Research 39, 34-42, 2016
32016
Injection direction sensitive spin lifetime model in a strained thin silicon film
J Ghosh, D Osintsev, V Sverdlov, S Selberherr
2015 International Conference on Simulation of Semiconductor Processes and …, 2015
32015
Influence of valley splitting on spin relaxation time in a strained thin silicon film
J Ghosh, V Sverdlov, S Selberherr
2015 International Workshop on Computational Electronics (IWCE), 1-4, 2015
32015
Evaluation of spin lifetime in thin-body FETs: a high performance computing approach
J Ghosh, D Osintsev, V Sverdlov, J Weinbub, S Selberherr
International Conference on Large-Scale Scientific Computing, 285-292, 2015
32015
Modeling charge density in AlGaN/AlN/InGaN/GaN-based double heterostructures including InGaN layer strain relaxation
J Ghosh
Journal of Physics Communications 2 (12), 125010, 2018
22018
Charge density and bare surface barrier height in GaN/AlGaN/GaN heterostructures: A modeling and simulation study
J Ghosh, D Saha, S Ganguly, A Laha
International Journal of RF and Microwave Computer‐Aided Engineering 28 (8 …, 2018
22018
Universal Dependence of the Spin Lifetime in Silicon Films on the Spin Injection Direction
Sverdlov, G Viktor, S Joydeep, Selberherr
Workshop on Innovative Devices and Systems, 7, 2016
22016
CMOS-compatible spintronic devices
V Sverdlov, J Ghosh, A Makarov, T Windbacher, S Selberherr
2015 30th Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2015
22015
Modeling Silicon Spintronics
V Sverdlov, J Ghosh, D Osintsev, S Selberherr
Recent Advances in Mathematical Methods in Applied Sciences, 195-198, 2014
22014
Efficient ab initio plus analytic calculation of the effect of GaN layer tensile strain in AlGaN/GaN heterostructures
M Date, S Mukherjee, J Ghosh, D Saha, S Ganguly, A Laha, P Ghosh
Japanese Journal of Applied Physics 58 (9), 094001, 2019
12019
Temperature Dependent Variability Analysis of Threshold Voltage and On-Current for Optimum Switching Performance by Gallium Nitride-based Junctionless FinFET
S Mukherjee, S Dutta, J Ghosh, D Saha, A Laha, S Ganguly
2019 Electron Devices Technology and Manufacturing Conference (EDTM), 118-120, 2019
12019
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