Large linewidth reduction in semiconductor lasers based on atom-like gain material T Septon, A Becker, S Gosh, G Shtendel, V Sichkovskyi, F Schnabel, ...
Optica 6 (8), 1071-1077, 2019
49 2019 Rabi oscillations and self-induced transparency in InAs/InP quantum dot semiconductor optical amplifier operating at room temperature O Karni, A Capua, G Eisenstein, V Sichkovskyi, V Ivanov, JP Reithmaier
Optics Express 21 (22), 26786-26796, 2013
43 2013 Temperature-Insensitive High-Speed Directly Modulated 1.55- Quantum Dot Lasers S Banyoudeh, A Abdollahinia, O Eyal, F Schnabel, V Sichkovskyi, ...
IEEE Photonics Technology Letters 28 (21), 2451-2454, 2016
41 2016 High-gain wavelength-stabilized 1.55 μm InAs/InP (100) based lasers with reduced number of quantum dot active layers VI Sichkovskyi, M Waniczek, JP Reithmaier
Applied Physics Letters 102 (22), 2013
35 2013 Widely tunable narrow-linewidth 1.5 μm light source based on a monolithically integrated quantum dot laser array A Becker, V Sichkovskyi, M Bjelica, A Rippien, F Schnabel, M Kaiser, ...
Applied Physics Letters 110 (18), 2017
33 2017 Coherent control in a semiconductor optical amplifier operating at room temperature A Capua, O Karni, G Eisenstein, V Sichkovskyi, V Ivanov, JP Reithmaier
Nature Communications 5 (1), 5025, 2014
26 2014 Ultraviolet detectors based on ZnO: N thin films with different contact structures A Ievtushenko, G Lashkarev, V Lazorenko, V Karpyna, V Sichkovskyi, ...
Acta Physica Polonica A 114 (5), 1123-1129, 2008
25 2008 Anomalies of magnetic properties of layered crystals InSe containing Mn GV Lashkarev, VV Slynko, ZD Kovalyuk, VI Sichkovskyi, MV Radchenko, ...
Materials Science and Engineering: C 27 (5-8), 1052-1055, 2007
24 2007 Control of Dynamic Properties of InAs/InAlGaAs/InP Hybrid Quantum Well‐Quantum Dot Structures Designed as Active Parts of 1.55 μm Emitting Lasers W Rudno‐Rudziński, M Syperek, A Maryński, J Andrzejewski, J Misiewicz, ...
physica status solidi (a) 215 (4), 1700455, 2018
15 2018 Static and dynamic characteristics of an InAs/InP quantum-dot optical amplifier operating at high temperatures O Eyal, A Willinger, S Banyoudeh, F Schanbel, V Sichkovskyi, ...
Optics Express 25 (22), 27262-27269, 2017
15 2017 Carrier relaxation bottleneck in type-II InAs/InGaAlAs/InP (001) coupled quantum dots-quantum well structure emitting at 1.55 μm M Syperek, J Andrzejewski, E Rogowicz, J Misiewicz, S Bauer, ...
Applied Physics Letters 112 (22), 2018
14 2018 1.5-μm indium phosphide-based quantum dot lasers and optical amplifiers: The impact of atom-like optical gain material for optoelectronics devices S Bauer, V Sichkovskyi, O Eyal, T Septon, A Becker, I Khanonkin, ...
IEEE Nanotechnology Magazine 15 (2), 23-36, 2021
13 2021 Growth and optical characteristics of InAs quantum dot structures with tunnel injection quantum wells for 1.55 μm high-speed lasers S Bauer, V Sichkovskyi, JP Reithmaier
Journal of Crystal Growth 491, 20-25, 2018
13 2018 Diluted ferromagnetic semiconductors as spintronic materials GV Lashkarev, MV Radchenko, VA Karpina, VI Sichkovskyi
Low Temperature Physics 33 (2), 165-173, 2007
13 2007 Diluted magnetic semiconductors based on II–VI, III–VI, and IV–VI compounds GV Lashkarev, VI Sichkovskiyi, MV Radchenko, VA Karpina, PE Butorin, ...
Low Temperature Physics 35 (1), 62-70, 2009
12 2009 Diluted magnetic semiconductors based on II–VI, III–VI, and IV–VI compounds GV Lashkarev, VI Sichkovskiyi, MV Radchenko, VA Karpina, PE Butorin, ...
Low Temperature Physics 35 (1), 62-70, 2009
12 2009 Ultra-fast charge carrier dynamics across the spectrum of an optical gain media based on InAs/AlGaInAs/InP quantum dots I Khanonkin, AK Mishra, O Karni, V Mikhelashvili, S Banyoudeh, ...
AIP Advances 7 (3), 2017
11 2017 1.5-um quantum dot laser material with high temperature stability of threshold current density and external differential efficiency S Banyoudeh, A Abdollahinia, V Sichkovskyi, JP Reithmaier
Novel In-Plane Semiconductor Lasers XV 9767, 68-74, 2016
11 2016 Narrow-linewidth 1.5-um quantum dot distributed feedback lasers A Becker, V Sichkovskyi, M Bjelica, O Eyal, P Baum, A Rippien, ...
Novel In-Plane Semiconductor Lasers XV 9767, 99-106, 2016
11 2016 Nanomaterials based on CdS nanoparticles in polyethylene matrix MV Radchenko, GV Lashkarev, VI Sichkovskyi, AA Arshakuni, SP Gubin, ...
Inorganic Materials 45, 468-473, 2009
11 2009