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T. Paul Chow
T. Paul Chow
Bestätigte E-Mail-Adresse bei rpi.edu
Titel
Zitiert von
Zitiert von
Jahr
Wide bandgap compound semiconductors for superior high-voltage power devices
TP Chow, R Tyagi
[1993] Proceedings of the 5th International Symposium on Power Semiconductor …, 1993
6911993
Silicon carbide benefits and advantages for power electronics circuits and systems
A Elasser, TP Chow
Proceedings of the IEEE 90 (6), 969-986, 2002
5702002
SiC power Schottky and PiN diodes
R Singh, JA Cooper, MR Melloch, TP Chow, JW Palmour
IEEE Transactions on Electron Devices 49 (4), 665-672, 2002
2812002
Vertical double diffused metal oxide semiconductor VDMOS device with increased safe operating area and method
HR Chang, BJ Baliga, TSP Chow
US Patent 4,801,986, 1989
2601989
A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications
A Elasser, MH Kheraluwala, M Ghezzo, RL Steigerwald, NA Evers, ...
IEEE Transactions on Industry Applications 39 (4), 915-921, 2003
2162003
High-voltage normally off GaN MOSFETs on sapphire substrates
K Matocha, TP Chow, RJ Gutmann
IEEE Transactions on Electron Devices 52 (1), 6-10, 2004
2012004
Enhancement-mode n-channel GaN MOSFETs on p and n-GaN/sapphire substrates
W Huang, T Khan, TP Chow
2006 IEEE International Symposium on Power Semiconductor Devices and IC's, 1-4, 2006
1832006
Analytical modeling and experimental evaluation of interconnect parasitic inductance on MOSFET switching characteristics
Y Xiao, H Shah, TP Chow, RJ Gutmann
Nineteenth Annual IEEE Applied Power Electronics Conference and Exposition …, 2004
1682004
SiC and GaN bipolar power devices
TP Chow, V Khemka, J Fedison, N Ramungul, K Matocha, Y Tang, ...
Solid-State Electronics 44 (2), 277-301, 2000
1612000
Refractory metal silicides: thin-film properties and processing technology
TP Chow, AJ Steckl
IEEE transactions on electron devices 30 (11), 1480-1497, 1983
1331983
Smart power devices and ICs using GaAs and wide and extreme bandgap semiconductors
TP Chow, I Omura, M Higashiwaki, H Kawarada, V Pala
IEEE Transactions on Electron Devices 64 (3), 856-873, 2017
1322017
Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in …
Z Li, J Waldron, T Detchprohm, C Wetzel, RF Karlicek Jr, TP Chow
Applied Physics Letters 102 (19), 192107, 2013
1282013
Electrical characteristics of magnesium-doped gallium nitride junction diodes
JB Fedison, TP Chow, H Lu, IB Bhat
Applied physics letters 72 (22), 2841-2843, 1998
1241998
Vertical double diffused metal oxide semiconductor (VDMOS) device including high voltage junction exhibiting increased safe operating area
BJ Baliga, TSP Chow, HR Chang
US Patent 4,823,176, 1989
1181989
1000-V, 30-A 4H-SiC BJTs with high current gain
S Krishnaswami, A Agarwal, SH Ryu, C Capell, J Richmond, J Palmour, ...
IEEE Electron Device Letters 26 (3), 175-177, 2005
1112005
SiC power devices
TP Chow, M Ghezzo
MRS Online Proceedings Library (OPL) 423, 9, 1996
1101996
High-voltage SiC and GaN power devices
TP Chow
Microelectronic Engineering 83 (1), 112-122, 2006
1042006
Method of fabricating a self-aligned DMOS transistor device using SiC and spacers
M Ghezzo, TSP Chow, JW Kretchmer, RJ Saia, WA Hennessy
US Patent 5,510,281, 1996
1031996
Modification of Schottky barriers in silicon by reactive ion etching with NF3
S Ashok, TP Chow, BJ Baliga
Applied Physics Letters 42 (8), 687-689, 1983
1011983
Self-aligned transistor device including a patterned refracting dielectric layer
M Ghezzo, TSP Chow, JW Kretchmer, RJ Saia, WA Hennessy
US Patent 5,814,859, 1998
1001998
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