T. Paul Chow
T. Paul Chow
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Zitiert von
Zitiert von
Wide bandgap compound semiconductors for superior high-voltage power devices
TP Chow, R Tyagi
[1993] Proceedings of the 5th International Symposium on Power Semiconductor …, 1993
Silicon carbide benefits and advantages for power electronics circuits and systems
A Elasser, TP Chow
Proceedings of the IEEE 90 (6), 969-986, 2002
SiC power Schottky and PiN diodes
R Singh, JA Cooper, MR Melloch, TP Chow, JW Palmour
IEEE Transactions on Electron Devices 49 (4), 665-672, 2002
Vertical double diffused metal oxide semiconductor VDMOS device with increased safe operating area and method
HR Chang, BJ Baliga, TSP Chow
US Patent 4,801,986, 1989
A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications
A Elasser, MH Kheraluwala, M Ghezzo, RL Steigerwald, NA Evers, ...
IEEE Transactions on Industry Applications 39 (4), 915-921, 2003
High-voltage normally off GaN MOSFETs on sapphire substrates
K Matocha, TP Chow, RJ Gutmann
IEEE Transactions on Electron Devices 52 (1), 6-10, 2004
Enhancement-mode n-channel GaN MOSFETs on p and n-GaN/sapphire substrates
W Huang, T Khan, TP Chow
2006 IEEE International Symposium on Power Semiconductor Devices and IC's, 1-4, 2006
Analytical modeling and experimental evaluation of interconnect parasitic inductance on MOSFET switching characteristics
Y Xiao, H Shah, TP Chow, RJ Gutmann
Nineteenth Annual IEEE Applied Power Electronics Conference and Exposition …, 2004
SiC and GaN bipolar power devices
TP Chow, V Khemka, J Fedison, N Ramungul, K Matocha, Y Tang, ...
Solid-State Electronics 44 (2), 277-301, 2000
Refractory metal silicides: thin-film properties and processing technology
TP Chow, AJ Steckl
IEEE transactions on electron devices 30 (11), 1480-1497, 1983
Smart power devices and ICs using GaAs and wide and extreme bandgap semiconductors
TP Chow, I Omura, M Higashiwaki, H Kawarada, V Pala
IEEE Transactions on Electron Devices 64 (3), 856-873, 2017
Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in …
Z Li, J Waldron, T Detchprohm, C Wetzel, RF Karlicek Jr, TP Chow
Applied Physics Letters 102 (19), 192107, 2013
Electrical characteristics of magnesium-doped gallium nitride junction diodes
JB Fedison, TP Chow, H Lu, IB Bhat
Applied physics letters 72 (22), 2841-2843, 1998
Vertical double diffused metal oxide semiconductor (VDMOS) device including high voltage junction exhibiting increased safe operating area
BJ Baliga, TSP Chow, HR Chang
US Patent 4,823,176, 1989
1000-V, 30-A 4H-SiC BJTs with high current gain
S Krishnaswami, A Agarwal, SH Ryu, C Capell, J Richmond, J Palmour, ...
IEEE Electron Device Letters 26 (3), 175-177, 2005
SiC power devices
TP Chow, M Ghezzo
MRS Online Proceedings Library (OPL) 423, 9, 1996
High-voltage SiC and GaN power devices
TP Chow
Microelectronic Engineering 83 (1), 112-122, 2006
Method of fabricating a self-aligned DMOS transistor device using SiC and spacers
M Ghezzo, TSP Chow, JW Kretchmer, RJ Saia, WA Hennessy
US Patent 5,510,281, 1996
Modification of Schottky barriers in silicon by reactive ion etching with NF3
S Ashok, TP Chow, BJ Baliga
Applied Physics Letters 42 (8), 687-689, 1983
Self-aligned transistor device including a patterned refracting dielectric layer
M Ghezzo, TSP Chow, JW Kretchmer, RJ Saia, WA Hennessy
US Patent 5,814,859, 1998
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