| Calculation of TiO2 Surface and Subsurface Oxygen Vacancy by the Screened Exchange Functional H Li, Y Guo, J Robertson The Journal of Physical Chemistry C 119 (32), 18160-18166, 2015 | 168 | 2015 |
| Controlling Surface Termination and Facet Orientation in Cu2O Nanoparticles for High Photocatalytic Activity: A Combined Experimental and Density Functional … Y Su, H Li, H Ma, J Robertson, A Nathan ACS Applied Materials & Interfaces 9 (9), 8100-8106, 2017 | 118 | 2017 |
| The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM N Sedghi, H Li, IF Brunell, K Dawson, RJ Potter, Y Guo, JT Gibbon, ... Applied Physics Letters 110 (10), 102902, 2017 | 69 | 2017 |
| Oxygen vacancies and hydrogen in amorphous In-Ga-Zn-O and ZnO H Li, Y Guo, J Robertson Physical Review Materials 2 (7), 074601, 2018 | 30 | 2018 |
| Modeling of surface gap state passivation and Fermi level de-pinning in solar cells H Lu, Y Guo, H Li, J Robertson Applied Physics Letters 114 (22), 222106, 2019 | 28 | 2019 |
| Hydrogen and the Light-Induced Bias Instability Mechanism in Amorphous Oxide Semiconductors H Li, Y Guo, J Robertson Scientific reports 7 (1), 16858, 2017 | 22 | 2017 |
| Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping N Sedghi, H Li, IF Brunell, K Dawson, Y Guo, RJ Potter, JT Gibbon, ... Applied Physics Letters 111 (9), 092904, 2017 | 22 | 2017 |
| Face Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge H Li, Y Guo, J Robertson Scientific Reports 7 (1), 16669, 2017 | 17 | 2017 |
| Band Offset Models of Three-Dimensionally Bonded Semiconductors and Insulators Y Guo, H Li, SJ Clark, J Robertson The Journal of Physical Chemistry C 123 (9), 5562-5570, 2019 | 16 | 2019 |
| Extending the metal-induced gap state model of Schottky barriers J Robertson, Y Guo, Z Zhang, H Li Journal of Vacuum Science & Technology B, Nanotechnology and …, 2020 | 15 | 2020 |
| Defect Emission and Optical Gain in SiCxOy:H Films Z Lin, H Li, R Huang, Y Zhang, J Song, H Li, Y Guo, C Song, J Robertson ACS Applied Materials & Interfaces 9 (27), 22725-22731, 2017 | 14 | 2017 |
| Dye-Assisted Transformation of Cu2O Nanocrystals to Amorphous CuxO Nanoflakes for Enhanced Photocatalytic Performance Y Su, H Li, H Ma, H Wang, J Robertson, A Nathan American Chemical Society, 2018 | 13 | 2018 |
| Germanium oxidation occurs by diffusion of oxygen network interstitials H Li, J Robertson Applied Physics Letters 110 (22), 222902, 2017 | 13 | 2017 |
| Yttrium passivation of defects in GeO2 and GeO2/Ge interfaces H Li, J Robertson Applied Physics Letters 110 (3), 032903, 2017 | 12 | 2017 |
| AlN and Al oxy-nitride gate dielectrics for reliable gate stacks on Ge and InGaAs channels Y Guo, H Li, J Robertson Journal of Applied Physics 119 (20), 204101, 2016 | 12 | 2016 |
| Ab-initio simulations of higher Miller index Si: SiO2 interfaces for fin field effect transistor and nanowire transistors H Li, Y Guo, J Robertson, Y Okuno Journal of Applied Physics 119 (5), 054103, 2016 | 8 | 2016 |
| AlN-GeO 2 based gate stack for improved reliability of Ge MOSFETs H Li, Y Guo, J Robertson Microelectronic Engineering 147, 168-170, 2015 | 7 | 2015 |
| Effect of metal oxide additions to quality on Ge/GeO2 interfaces H Li, J Robertson, Y Okuno Journal of Applied Physics 120 (13), 134101, 2016 | 2 | 2016 |
John RobertsonProfessor of Electronics, University of CambridgeBestätigte E-Mail-Adresse bei eng.cam.ac.uk
