Growth Rates of Dry Thermal Oxidation of 4H-Silicon Carbide V Šimonka, A Hössinger, J Weinbub, S Selberherr Journal of Applied Physics 120 (13), 135705, 2016 | 44 | 2016 |
ReaxFF reactive molecular dynamics study of orientation dependence of initial silicon carbide oxidation V Šimonka, A Hössinger, J Weinbub, S Selberherr The Journal of Physical Chemistry A 121 (46), 8791-8798, 2017 | 37 | 2017 |
Symmetry Breaking in Nematic Liquid Crystals: Analogy with Cosmology and Magnetism R Repnik, A Ranjkesh, V Simonka, M Ambrozic, Z Bradac, S Kralj Journal of Physics: Condensed Matter 25 (40), 404201, 2013 | 26 | 2013 |
Transient model for electrical activation of aluminium and phosphorus-implanted silicon carbide V Šimonka, A Toifl, A Hössinger, S Selberherr, J Weinbub Journal of Applied Physics 123 (23), 2018 | 19 | 2018 |
Modeling of electrical activation ratios of phosphorus and nitrogen doped silicon carbide V Šimonka, A Hössinger, J Weinbub, S Selberherr 2017 International Conference on Simulation of Semiconductor Processes and …, 2017 | 12 | 2017 |
Anisotropic interpolation method of silicon carbide oxidation growth rates for three-dimensional simulation V Šimonka, G Nawratil, A Hössinger, J Weinbub, S Selberherr Solid-State Electronics 128, 135-140, 2017 | 12 | 2017 |
Stochastic Simulation of the Circadian Rhythmicity in the SCN Neuronal Network V Šimonka, M Fras, M Gosak Physica A: Statistical Mechanics and its Applications 424, 1-10, 2015 | 12 | 2015 |
Empirical model for electrical activation of aluminum-and boron-implanted silicon carbide V Šimonka, A Hössinger, J Weinbub, S Selberherr IEEE Transactions on Electron Devices 65 (2), 674-679, 2018 | 9 | 2018 |
Simulation of the effects of postimplantation annealing on silicon carbide DMOSFET characteristics A Toifl, V Šimonka, A Hössinger, S Selberherr, T Grasser, J Weinbub IEEE Transactions on Electron Devices 66 (7), 3060-3065, 2019 | 5 | 2019 |
Modeling and simulation of electrical activation of acceptor-type dopants in silicon carbide V Šimonka, A Hössinger, J Weinbub, S Selberherr Materials Science Forum 924, 192-195, 2018 | 5 | 2018 |
Empirical model for electrical activation of aluminum-and boron-implanted silicon carbide V Simonka, A Hoessinger, J Weinbub, S Selberherr IEEE Transactions on Electron Devices 65 (2), 674-679, 2018 | 5 | 2018 |
Surface morphology of 4H-SiC after thermal oxidation J Woerle, V Šimonka, E Müller, A Hössinger, H Sigg, S Selberherr, ... Materials Science Forum 963, 180-183, 2019 | 3 | 2019 |
Direction Dependent Three-Dimensional Silicon Carbide Oxidation Growth Rate Calculations V Šimonka, G Nawratil, A Hössinger, J Weinbub, S Selberherr EUROSOI-ULIS 2016, 128-129, 2016 | 3 | 2016 |
Steady-State Empirical Model for Electrical Activation of Silicon-Implanted Gallium Nitride A Toifl, V Šimonka, A Hössinger, S Selberherr, J Weinbub 2018 International Conference on Simulation of Semiconductor Processes and …, 2018 | 2 | 2018 |
Three-Dimensional Growth Rate Modeling and Simulation of Silicon Carbide Thermal Oxidation Š Vito, A Hössinger, J Wienbub, S Selberherr International Conference on Simulation of Semiconductor Processes and …, 2016 | 2 | 2016 |
Comprehensive design solutions for wide bandgap power electronics S Tao, Q Zhao, V Simonka, A Hoessinger, E Guichard 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020 | 1 | 2020 |
Thermal oxidation and dopant activation of silicon carbide V Šimonka Technische Universität Wien, 2018 | 1 | 2018 |
Investigation of Post-Implantation Annealing for Phosphorus-Implanted 4H-Silicon Carbide V Šimonka, A Hössinger, S Selberherr, J Weinbub Proceedings of the International Conference on Microelectronic Devices and …, 2018 | 1 | 2018 |
Geometrical Aspects of Three-Dimensional Silicon Carbide Oxidation Growth Rate Modeling V Šimonka, G Nawratil, A Hössinger, J Weinbub, S Selberherr EUROSOI-ULIS, 128-130, 2016 | 1 | 2016 |
Fazni prehodi v igri javnih dobrin na mrežah V Šimonka https://dk.um.si/IzpisGradiva.php?id=48409&lang=slv, 2015 | 1 | 2015 |