Vito Šimonka
Vito Šimonka
Silvaco Europe Ltd.
Verified email at silvaco.com - Homepage
Title
Cited by
Cited by
Year
Growth Rates of Dry Thermal Oxidation of 4H-Silicon Carbide
V Šimonka, A Hössinger, J Weinbub, S Selberherr
Journal of Applied Physics 120 (13), 135705, 2016
212016
Symmetry Breaking in Nematic Liquid Crystals: Analogy with Cosmology and Magnetism
R Repnik, A Ranjkesh, V Simonka, M Ambrozic, Z Bradac, S Kralj
Journal of Physics: Condensed Matter 25 (40), 404201, 2013
182013
Empirical model for electrical activation of aluminum-and boron-implanted silicon carbide
V Šimonka, A Hössinger, J Weinbub, S Selberherr
IEEE Transactions on Electron Devices 65 (2), 674-679, 2018
92018
ReaxFF reactive molecular dynamics study of orientation dependence of initial silicon carbide oxidation
V Šimonka, A Hössinger, J Weinbub, S Selberherr
The Journal of Physical Chemistry A 121 (46), 8791-8798, 2017
82017
Anisotropic interpolation method of silicon carbide oxidation growth rates for three-dimensional simulation
V Šimonka, G Nawratil, A Hössinger, J Weinbub, S Selberherr
Solid-State Electronics 128, 135-140, 2017
62017
Stochastic Simulation of the Circadian Rhythmicity in the SCN Neuronal Network
V Šimonka, M Fras, M Gosak
Physica A: Statistical Mechanics and its Applications 424, 1-10, 2015
62015
Modeling of electrical activation ratios of phosphorus and nitrogen doped silicon carbide
V Šimonka, A Hössinger, J Weinbub, S Selberherr
2017 International Conference on Simulation of Semiconductor Processes and …, 2017
52017
Transient model for electrical activation of aluminium and phosphorus-implanted silicon carbide
V Šimonka, A Toifl, A Hössinger, S Selberherr, J Weinbub
Journal of Applied Physics 123 (23), 235701, 2018
42018
Modeling and simulation of electrical activation of acceptor-type dopants in silicon carbide
V Šimonka, A Hössinger, J Weinbub, S Selberherr
Materials Science Forum 924, 192-195, 2018
42018
Transient model for electrical activation of aluminium and phosphorus-implanted silicon carbide
V Simonka, A Toifl, A Hossinger, S Selberherr, J Weinbub
JOURNAL OF APPLIED PHYSICS 123 (23), 2018
32018
Surface morphology of 4H-SiC after thermal oxidation
J Woerle, V Šimonka, E Müller, A Hössinger, H Sigg, S Selberherr, ...
Materials Science Forum 963, 180-183, 2019
22019
Direction Dependent Three-Dimensional Silicon Carbide Oxidation Growth Rate Calculations
V Šimonka, G Nawratil, A Hössinger, J Weinbub, S Selberherr
EUROSOI-ULIS 2016, 128-129, 2016
22016
Steady-State Empirical Model for Electrical Activation of Silicon-Implanted Gallium Nitride
A Toifl, V Šimonka, A Hössinger, S Selberherr, J Weinbub
2018 International Conference on Simulation of Semiconductor Processes and …, 2018
12018
Three-Dimensional Growth Rate Modeling and Simulation of Silicon Carbide Thermal Oxidation
Š Vito, A Hössinger, J Wienbub, S Selberherr
International Conference on Simulation of Semiconductor Processes and …, 2016
12016
Fazni prehodi v igri javnih dobrin na mrežah
V Šimonka
https://dk.um.si/IzpisGradiva.php?id=48409&lang=slv, 2015
12015
Comprehensive design solutions for wide bandgap power electronics
S Tao, Q Zhao, V Simonka, A Hoessinger, E Guichard
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020
2020
Simulation of the Effects of Postimplantation Annealing on Silicon Carbide DMOSFET Characteristics
A Toifl, V Šimonka, A Hössinger, S Selberherr, T Grasser, J Weinbub
IEEE Transactions on Electron Devices 66 (7), 3060-3065, 2019
2019
Geometrical Aspects of Three-Dimensional Silicon Carbide Oxidation Growth Rate Modeling
V Šimonka, G Nawratil, A Hössinger, J Weinbub, S Selberherr
EUROSOI-ULIS, 128-130, 2016
2016
Stohastic Simulation of the Spatio-Temporal Circadian Activity in the Suprachiasmatic Nucleus
V ŠIMONKA, M FRAS, M GOSAK
13. simpozij fizikov Univerze v Mariboru, 61, 2014
2014
Role of Nitric Oxide in Pathogenesis of Atherosclerosis: Modelling Approach
V ŠIMONKA, V POHOREC, A FAJMUT, M BRUMEN
Regional Biophysics Conference, 66, 2014
2014
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Articles 1–20