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Theresia Knobloch
Theresia Knobloch
Researcher, TU Wien
Bestätigte E-Mail-Adresse bei iue.tuwien.ac.at - Startseite
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Jahr
Transistors based on two-dimensional materials for future integrated circuits
S Das, A Sebastian, E Pop, CJ McClellan, AD Franklin, T Grasser, ...
Nature Electronics 4 (11), 786-799, 2021
3672021
Insulators for 2D nanoelectronics: the gap to bridge
YY Illarionov, T Knobloch, M Jech, M Lanza, D Akinwande, MI Vexler, ...
Nature Communications 11 (1), 3385, 2020
2952020
The role of charge trapping in MoS2/SiO2 and MoS2/hBN field-effect transistors
YY Illarionov, G Rzepa, M Waltl, T Knobloch, A Grill, MM Furchi, T Mueller, ...
2D Materials 3 (3), 035004, 2016
1992016
The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials
T Knobloch, YY Illarionov, F Ducry, C Schleich, S Wachter, K Watanabe, ...
Nature Electronics 4 (2), 98-108, 2021
1882021
Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors
YY Illarionov, AG Banshchikov, DK Polyushkin, S Wachter, T Knobloch, ...
Nature Electronics 2 (6), 230-235, 2019
1732019
Comphy—A compact-physics framework for unified modeling of BTI
G Rzepa, J Franco, B O’Sullivan, A Subirats, M Simicic, G Hellings, ...
Microelectronics Reliability 85, 49-65, 2018
1602018
Improved Hysteresis and Reliability of MoS2 Transistors With High-Quality CVD Growth and Al2O3 Encapsulation
YY Illarionov, KKH Smithe, M Waltl, T Knobloch, E Pop, T Grasser
IEEE Electron Device Letters 38 (12), 1763-1766, 2017
1002017
Highly-stable black phosphorus field-effect transistors with low density of oxide traps
YY Illarionov, M Waltl, G Rzepa, T Knobloch, JS Kim, D Akinwande, ...
npj 2D Materials and Applications 1 (1), 23, 2017
582017
Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors
B Stampfer, F Zhang, YY Illarionov, T Knobloch, P Wu, M Waltl, A Grill, ...
ACS nano 12 (6), 5368-5375, 2018
572018
A Physical Model for the Hysteresis in MoS2 Transistors
T Knobloch, G Rzepa, YY Illarionov, M Waltl, F Schanovsky, B Stampfer, ...
IEEE Journal of the Electron Devices Society 6, 972-978, 2018
562018
Energetic mapping of oxide traps in MoS2 field-effect transistors
YY Illarionov, T Knobloch, M Waltl, G Rzepa, A Pospischil, DK Polyushkin, ...
2D Materials 4 (2), 025108, 2017
552017
Dielectric Properties of Ultrathin CaF2 Ionic Crystals
C Wen, AG Banshchikov, YY Illarionov, W Frammelsberger, T Knobloch, ...
Advanced Materials 32 (34), 2002525, 2020
472020
Impact of layer and substrate properties on the surface acoustic wave velocity in scandium doped aluminum nitride based SAW devices on sapphire
M Gillinger, K Shaposhnikov, T Knobloch, M Schneider, M Kaltenbacher, ...
Applied physics letters 108 (23), 2016
372016
Reliability of scalable MoS2 FETs with 2 nm crystalline CaF2 insulators
YY Illarionov, AG Banshchikov, DK Polyushkin, S Wachter, T Knobloch, ...
2D Materials 6 (4), 045004, 2019
362019
Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning
T Knobloch, B Uzlu, YY Illarionov, Z Wang, M Otto, L Filipovic, M Waltl, ...
Nature Electronics 5 (6), 356-366, 2022
342022
Piezoelectricity in two dimensions: Graphene vs. molybdenum disulfide
X Song, F Hui, T Knobloch, B Wang, Z Fan, T Grasser, X Jing, Y Shi, ...
Applied Physics Letters 111 (8), 2017
332017
Efficient physical defect model applied to PBTI in high-κ stacks
G Rzepa, J Franco, A Subirats, M Jech, A Chasin, A Grill, M Waltl, ...
2017 IEEE International Reliability Physics Symposium (IRPS), XT-11.1-XT-11.6, 2017
322017
Perspective of 2D integrated electronic circuits: Scientific pipe dream or disruptive technology?
M Waltl, T Knobloch, K Tselios, L Filipovic, B Stampfer, Y Hernandez, ...
Advanced Materials 34 (48), 2201082, 2022
272022
Incorporating Niobium in MoS2 at BEOL‐Compatible Temperatures and its Impact on Copper Diffusion Barrier Performance
R Zhao, CL Lo, F Zhang, RK Ghosh, T Knobloch, M Terrones, Z Chen, ...
Advanced Materials Interfaces 6 (22), 1901055, 2019
182019
Challenges for nanoscale CMOS logic based on two-dimensional materials
T Knobloch, S Selberherr, T Grasser
Nanomaterials 12 (20), 3548, 2022
162022
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