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Taiki Uemura
Taiki Uemura
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Comprehensive study of soft errors in advanced CMOS circuits with 90/130 nm technology
Y Tosaka, H Ehara, M Igeta, T Uemura, H Oka, N Matsuoka, K Hatanaka
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
892004
SEILA: Soft error immune latch for mitigating multi-node-SEU and local-clock-SET
T Uemura, Y Tosaka, H Matsuyama, K Shono, CJ Uchibori, K Takahisa, ...
2010 IEEE International Reliability Physics Symposium, 218-223, 2010
582010
Multi-scale Monte Carlo simulation of soft errors using PHITS-HyENEXSS code system
S Abe, Y Watanabe, N Shibano, N Sano, H Furuta, M Tsutsui, T Uemura, ...
IEEE Transactions on Nuclear Science 59 (4), 965-970, 2012
412012
Reliability characterization of 10nm FinFET technology with multi-VT gate stack for low power and high performance
M Jin, C Liu, J Kim, J Kim, H Shim, K Kim, G Kim, S Lee, T Uemura, ...
2016 IEEE International Electron Devices Meeting (IEDM), 15.1. 1-15.1. 4, 2016
332016
Neutron-induced soft-error simulation technology for logic circuits
T Uemura, Y Tosaka, S Satoh
Japanese journal of applied physics 45 (4S), 3256, 2006
312006
Neutron-induced soft-error simulation technology for logic circuits
T Uemura, Y Tosaka, S Satoh
Japanese journal of applied physics 45 (4S), 3256, 2006
312006
Soft-error in SRAM at ultra-low voltage and impact of secondary proton in terrestrial environment
T Uemura, T Kato, H Matsuyama, M Hashimoto
IEEE Transactions on Nuclear Science 60 (6), 4232-4237, 2013
252013
The 10th generation 16-core sparc64™ processor for mission critical unix server
R Kan, T Tanaka, G Sugizaki, K Ishizaka, R Nishiyama, S Sakabayashi, ...
IEEE Journal of Solid-State Circuits 49 (1), 32-40, 2013
252013
A 10th generation 16-core SPARC64 processor for mission-critical UNIX server
R Kan, T Tanaka, G Sugizaki, R Nishiyama, S Sakabayashi, Y Koyanagi, ...
2013 IEEE International Solid-State Circuits Conference Digest of Technical …, 2013
252013
Angular dependency of neutron-induced multiple cell upsets in 65-nm 10T subthreshold SRAM
R Harada, SI Abe, H Fuketa, T Uemura, M Hashimoto, Y Watanabe
IEEE Transactions on Nuclear Science 59 (6), 2791-2795, 2012
252012
Investigation of logic circuit soft error rate (SER) in 14nm FinFET technology
T Uemura, S Lee, J Park, S Pae, H Lee
2016 IEEE International Reliability Physics Symposium (IRPS), 3B-4-1-3B-4-4, 2016
242016
Neutron-induced soft error analysis in MOSFETs from a 65nm to a 25 nm design rule using multi-scale Monte Carlo simulation method
S Abe, Y Watanabe, N Shibano, N Sano, H Furuta, M Tsutsui, T Uemura, ...
2012 IEEE International Reliability Physics Symposium (IRPS), SE. 3.1-SE. 3.6, 2012
232012
Measurement of neutron-induced single event transient pulse width narrower than 100ps
H Nakamura, K Tanaka, T Uemura, K Takeuchi, T Fukuda, S Kumashiro
2010 IEEE International Reliability Physics Symposium, 694-697, 2010
222010
Scaling effect and circuit type dependence of neutron induced single event transient
H Nakamura, T Uemura, K Takeuchi, T Fukuda, S Kumashiro, T Mogami
2012 IEEE International Reliability Physics Symposium (IRPS), 3C. 3.1-3C. 3.7, 2012
202012
Using low pass filters in mitigation techniques against single-event transients in 45nm technology LSIs
T Uemura, R Tanabe, Y Tosaka, S Satoh
2008 14th IEEE International On-Line Testing Symposium, 117-122, 2008
192008
Technology Scaling Trend of Soft Error Rate in Flip-Flops innm Bulk FinFET Technology
T Uemura, S Lee, U Monga, J Choi, S Lee, S Pae
IEEE Transactions on Nuclear Science 65 (6), 1255-1263, 2018
172018
Reliability of 8Mbit embedded-STT-MRAM in 28nm FDSOI technology
Y Ji, HJ Goo, J Lim, SB Lee, S Lee, T Uemura, JC Park, SI Han, SC Shin, ...
2019 IEEE International Reliability Physics Symposium (IRPS), 1-3, 2019
162019
Investigation of alpha-induced single event transient (SET) in 10 nm FinFET logic circuit
T Uemura, S Lee, D Min, I Moon, J Lim, S Lee, HC Sagong, S Pae
2018 IEEE International Reliability Physics Symposium (IRPS), P-SE. 1-1-P-SE …, 2018
152018
Origin analysis of thermal neutron soft error rate at nanometer scale
T Yamazaki, T Kato, T Uemura, H Matsuyama, Y Tada, K Yamazaki, ...
Journal of Vacuum Science & Technology B 33 (2), 2015
142015
Study on influence of device structure dimensions and profiles on charge collection current causing SET pulse leading to soft errors in logic circuits
K Tanaka, H Nakamura, T Uemura, K Takeuchi, T Fukuda, S Kumashiro
2009 International Conference on Simulation of Semiconductor Processes and …, 2009
142009
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